Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.

Abstract: Devices, systems, and methods for detecting nucleic acid hybridization, including single nucleic base mutations at low concentrations, are disclosed, using capture units having nanoparticles with attached single-stranded oligonucleotides that are capable of hybridizing target oligonucleotides and reporter molecules having nanoparticles with attached single-stranded oligonucleotides, without the use of labeling or target modification.

Abstract: Devices, systems, and methods for detecting nucleic acid hybridization, including single nucleic base mutations at low concentrations, are disclosed, using capture units having nanoparticles with attached single-stranded oligonucleotides that are capable of hybridizing target oligonucleotides and reporter molecules having nanoparticles with attached single-stranded oligonucleotides, without the use of labeling or target modification.

Abstract: Within a method for fabricating a microelectronic, and a microelectronic fabrication fabricated in accord with the method, there is formed upon a bond pad formed over a substrate a conductor passivation layer. Within the method and the microelectronic fabrication, the bond pad is formed from a conductor material selected from the group consisting of aluminum and aluminum alloy conductor materials, and the conductor passivation layer is formed from a noble metal conductor material. The invention provides particular value for fabricating color filter sensor image array optoelectronic microelectronic fabrications with attenuated bond pad corrosion.

Abstract: Within a method for fabricating a microelectronic, and a microelectronic fabrication fabricated in accord with the method, there is formed upon a bond pad formed over a substrate a conductor passivation layer. Within the method and the microelectronic fabrication, the bond pad is formed from a conductor material selected from the group consisting of aluminum and aluminum alloy conductor materials, and the conductor passivation layer is formed from a noble metal conductor material. The invention provides particular value for fabricating color filter sensor image array optoelectronic microelectronic fabrications with attenuated bond pad corrosion.