Abstract: An augmented reality (AR) display is provided. The display comprises a light field generator and a birdbath eyepiece. The light field generator generates a light field as an output. The birdbath eyepiece connects to the light field generator for receiving and projecting the light field to human eye. The birdbath eyepiece comprises a beam splitter and a combiner. The combiner has a curved surface. Each beam of the light field is split into two beams by the beam splitter with one of the split beams reflected by the combiner. Three states-of-use of the birdbath eyepiece are provided for the near-eye light field AR display to transmit the light field to the human eye. A low f-number (or focal ratio) and a large eyebox are obtained to effectively expand the field of view and increase the volume of space within which the human eye can receive the light field.

Abstract: The present invention discloses a method for forming metal silicide on an electronic structure by first depositing a metal layer on top of a silicon layer of polysilicon, single crystal silicon or amorphous silicon capable of forming a metal silicide, and then irradiating the metal layer with laser energy for a sufficient length of time such that a layer of metal silicide is formed at the metal interface with polysilicon, single crystal silicon and amorphous silicon. The unreacted metal layer on the metal silicide is then removed by a wet dipping method by selecting a suitable etchant for the metal. The present invention novel method can be applied to various metallic materials such as Ti, Co, W, Pt, Hf, Ta, Mo, Pd and Cr. The laser source utilized is a pulse Excimer laser of XeCl, ArF or XeF.

Abstract: A process for manufacturing a TFT without the use of ion implantation is described. Instead, heavily doped layers of amorphous silicon are used as diffusion sources. Two embodiments of the invention are described. In the first embodiment the gate pedestal is deposited first, followed by gate oxide and an amorphous layer of undoped silicon. This is followed by the layer of heavily doped amorphous silicon which is subjected to a relatively low energy laser scan which drives in a small amount of dopant and converts it to N-. After the N+ layer has been patterned and etched to form source and drain electrodes, a second, higher energy, laser scan is given. This brings the source and drain very close to, but not touching, the channel, resulting in an LDD type of structure. In the second embodiment a layer of intrinsic polysilicon is used for the channel. It is covered with a layer of gate oxide and a metallic gate pedestal.