Abstract: An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.

Abstract: An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.

Abstract: An image sensor structure includes a plurality of pixels formed on a substrate. Each pixel includes an image senor interconnect structure, a separator layer and an electrode layer, wherein the separator layer has a first thickness an a sidewall of the separator layer is recessed from a sidewall of the electrode layer. A first doped amorphous silicon layer id formed on the electrode layer, wherein the separator layer and the first doped amorphous silicon layer of a pixel are disconnected from that of an adjacent pixel.

Abstract: A method for fabricating an image sensor structure is provided. The method of fabricating an image sensor structure comprises a substrate. An image sensor interconnect structure, a separator layer and a patterned electrode layer are formed on the substrate in sequence. The separator layer, not covered by the patterned electrode layer, is removed to form a patterned separator layer, wherein a sidewall of the patterned electrode layer is recessed to a sidewall of the patterned electrode layer. A first doped amorphous silicon layer is formed on the patterned electrode layer, wherein the first doped amorphous silicon layer is a discontinuous layer.