Abstract: Disclosed is a speaker system. The speaker system includes a multimedia unit including a plurality of speaker units, a resonance medium for supporting the multimedia unit, a number of low frequency vibrators assembled with the multimedia unit and located between the multimedia unit and the resonance medium, a driving unit for providing high frequency audio signals to the speaker units and low frequency audio signals to the low frequency vibrators. A resonance member is formed by the low frequency vibrators and the resonance medium for producing low frequency sound.

Abstract: Disclosed is a haptic input system. The system includes a user interface device and a stylus cooperating with the user interface device. The stylus includes a vibrator driven by vibrating signals provided by the user interface device to vibrate to generate haptic feedback and to drive the user interface device to generate audible sounds.

Abstract: Disclosed is a speaker system. The speaker system includes a multimedia unit including a plurality of speaker units, a resonance medium for supporting the multimedia unit, a number of low frequency vibrators assembled with the multimedia unit and located between the multimedia unit and the resonance medium, a driving unit for providing high frequency audio signals to the speaker units and low frequency audio signals to the low frequency vibrators. A resonance member is formed by the low frequency vibrators and the resonance medium for producing low frequency sound.

Abstract: The present invention provides a carbon film that is remarkably excellent in current voltage (IV) characteristics. This is achieved by way of a carbon film structure, two or more carbon film assembly units 12 are formed on a substrate 10. The carbon film assembly units 12 comprise: a stem-like carbon film 14 which is made into a film in the shape of a long and thin needle; and a branch-like carbon film cluster 16 which is made into a film so as to surround the stem-like carbon film 14 from the halfway to the lower part of this stem-like carbon film 14. The stem-like carbon film 14 has the shape of a long and thin needle having a configuration which has a spiral streak-like step part 18 towards the distal end at the circumference face of a near tip and in which the radius becomes small as going to the distal end.

Abstract: A carbon film of the present invention has an elongated needle shape whose radius decreases toward a tip. The shape is, preferably, a shape in which a field concentration coefficient ? in the Fowler-Nordheim equation is expressed by h/r where r denotes the radius in an arbitrary position and h denotes height from the arbitrary position to the tip.

Abstract: A method of assessing the health of each oocyte or embryo of a mammal from a plurality of oocytes/embryos of the mammal is provided. The method comprises the steps of: measuring gap junctional coupling strength or connexin43 expression of follicular cells associated with each oocyte; and identifying the gap junctional coupling strength/connexin43 expression of follicular cells associated with each oocyte, wherein the greater the coupling strength/connexin43 expression of follicular cells associated with an oocyte relative to the coupling strength/connexin43 expression of follicular cells associated with each other oocyte, the healthier the oocyte and the embryo resulting from that oocyte. Kits for conducting these methods are also provided.

Abstract: A carbon film of the present invention has an elongated needle shape whose radius decreases toward a tip. The shape is, preferably, a shape in which a field concentration coefficient ? in the Fowler-Nordheim equation is expressed by h/r where r denotes the radius in an arbitrary position and h denotes height from the arbitrary position to the tip.

Abstract: The present invention provides a carbon film that is remarkably excellent in current voltage (IV) characteristics. This is achieved by way of a carbon film structure, two or more carbon film assembly units 12 are formed on a substrate 10. The carbon film assembly units 12 comprise: a stem-like carbon film 14 which is made into a film in the shape of a long and thin needle; and a branch-like carbon film cluster 16 which is made into a film so as to surround the stem-like carbon film 14 from the halfway to the lower part of this stem-like carbon film 14. The stem-like carbon film 14 has the shape of a long and thin needle having a configuration which has a spiral streak-like step part 18 towards the distal end at the circumference face of a near tip and in which the radius becomes small as going to the distal end.

Abstract: A carbon film of the present invention has an elongated needle shape whose radius decreases toward a tip. The shape is, preferably, a shape in which a field concentration coefficient ? in the Fowler-Nordheim equation is expressed by h/r where r denotes the radius in an arbitrary position and h denotes height from the arbitrary position to the tip.

Abstract: Problem: To generate long plasma easily at low cost and to perform a plurality of film deposition methods using a single plasma generating device. Means for Solving the Problem A plasma generating device is provided with, in the vacuum inside thereof, a cylindrical electrode comprising an opening in a part thereof and generating plasma therein when gas is introduced thereinto and a direct-current negative voltage is applied thereto.

Abstract: A carbon film of the present invention has an elongated needle shape whose radius decreases toward a tip. The shape is, preferably, a shape in which a field concentration coefficient ? in the Fowler-Nordheim equation is expressed by h/r where r denotes the radius in an arbitrary position and h denotes height from the arbitrary position to the tip.

Abstract: The present invention provides a chemical vapor deposition apparatus for a semiconductor film, containing a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, where part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof. The present invention also provides a chemical vapor deposition method using the apparatus.

Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.

Abstract: There is disclosed a chemical vapor deposition apparatus of semi-conductor film comprising a horizontal type reaction tube equipped with a susceptor to carry a substrate, a heater to heat the substrate, an ingredient gas introduction zone arranged in a way that feeding direction to the reaction tube of the ingredient gas becomes substantially parallel to the substrate, and a reaction gas exhaust division, and further having a pressurized gas introduction zone on the wall of the reaction tube facing the substrate, wherein the structure of at least one part of the pressurized gas introduction zone at an upstream side of an ingredient gas passageway is such that the pressurized gas supplied from said part of the pressurized gas introduction zone is fed in an oblique down or a horizontal direction oriented to a downstream side of the ingredient gas passageway. Also, disclosed herein a chemical vapor deposition method using the apparatus.

Abstract: There is disclosed a chemical vapor deposition apparatus for a semiconductor film, which comprises a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, wherein the constitution of the apparatus is such that part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof so as to change the direction of the gas stream to an oblique downward direction or is such that the spacing between the susceptor and the tubular reactor wall in opposition thereto is made smaller than the vertical spacing in the tubular reactor wall from a gas feed port in the feed gas introduction portion to the upstream side end of the feed gas passageway for the susceptor. Also disclosed herein a chemical vapor deposition method using the apparatus.

Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.