Abstract: An image sensor (32) includes a plurality of pixel sensing portion (320) that are arranged in columns and rows. Each of the pixel sensing portions (320) includes a thin film transistor (11), and a photodetection diode (13) including n-type (16), intrinsic (15), and p-type semiconductor layers (14). The intrinsic semiconductor layer (15) of the photodetection diode (13) of each of the pixel sensing portions (320) has a crystallinity gradient that varies from an amorphous silicon structure to a microcrystalline silicon structure along a first direction (L1) extending from the p-type semiconductor layer (14) toward the n-type semiconductor layer (16). An image sensing-enabled display apparatus (3) and a method of making the image sensor (32) are also disclosed.

Abstract: An image sensor includes a plurality of pixel sensing portions arranged in m columns and n rows. Each of the pixel sensing portions includes at least one thin film transistor and a photodetection diode (13) including n-type (16), intrinsic (15) and p-type (14) semiconductor layers. The p-type semiconductor layer (14) includes a multi-layered structure including lower (142) and upper (141) p-type semiconductor layered portions. The upper p-type semiconductor layered portion (141) has a band gap greater than 1.7 eV and has a p-type dopant in an amount not less than two times of that of the lower p-type semiconductor layered portion (142). An image sensing-enabled display apparatus and a method of making the image sensor are also disclosed.

Abstract: A recognition apparatus includes a light-transmissible top plate, a bottom plate, a light emitting unit, a photoluminescent unit, and a sensor module. The light-transmissible top plate and the bottom plate cooperatively define an inner space. The light emitting unit and the photoluminescent unit are in the inner space. The photoluminescent unit includes a plurality of quantum dots able to be excited by an initial light to emit an excitation light. The excitation light travels for irradiation on an object and is reflected to generate a reflection light travelling along a second path. The sensor module is disposed on the second path to receive the reflection light and to recognize an image of the object.

Abstract: An image sensor includes a plurality of pixel sensing portions arranged in m columns and n rows. Each of the pixel sensing portions includes at least one thin film transistor and a photodetection diode (13) including n-type (16), intrinsic (15) and p-type (14) semiconductor layers. The p-type semiconductor layer (14) includes a multi-layered structure including lower (142) and upper (141) p-type semiconductor layered portions. The upper p-type semiconductor layered portion (141) has a band gap greater than 1.7 eV and has a p-type dopant in an amount not less than two times of that of the lower p-type semiconductor layered portion (142). An image sensing-enabled display apparatus and a method of making the image sensor are also disclosed.

Abstract: An image sensor (32) includes a plurality of pixel sensing portion (320) that are arranged in columns and rows. Each of the pixel sensing portions (320) includes a thin film transistor (11), and a photodetection diode (13) including n-type (16), intrinsic (15), and p-type semiconductor layers (14). The intrinsic semiconductor layer (15) of the photodetection diode (13) of each of the pixel sensing portions (320) has a crystallinity gradient that varies from an amorphous silicon structure to a microcrystalline silicon structure along a first direction (L1) extending from the p-type semiconductor layer (14) toward the n-type semiconductor layer (16). An image sensing-enabled display apparatus (3) and a method of making the image sensor (32) are also disclosed.

Abstract: The present invention provides a fiber Bragg grating sensor system, which comprises a light-division device having receiving-sending terminals and sensing terminals, a light generating device and a photo detector coupled with receiving-sending terminal of a light-division device, sensing fibers coupled with the sensing terminals, said sensing fiber comprising a fiber Bragg grating, a information processor connecting with said photo detector. The light-division device distribute different optical energy ratio from said receiving-sending terminals to said sensing terminals. The intensity and wavelength division multiplexing can make different intensity for the information addressed of different sensing fiber on the same optical channel to enhance the sensing capacity of fiber Bragg grating sensor system.

Abstract: The present invention provides a fiber Bragg grating sensor system, which comprises a light-division device having receiving-sending terminals and sensing terminals, a light generating device and a photo detector coupled with receiving-sending terminal of a light-division device, sensing fibers coupled with the sensing terminals, said sensing fiber comprising a fiber Bragg grating, a information processor connecting with said photo detector. The light-division device distribute different optical energy ratio from said receiving-sending terminals to said sensing terminals. The intensity and wavelength division multiplexing can make different intensity for the information addressed of different sensing fiber on the same optical channel to enhance the sensing capacity of fiber Bragg grating sensor system.

Abstract: The present invention provides a fiber Bragg grating system, which employs a linear-cavity fiber laser scheme to develop a high resolution sensor system. The fiber Bragg grating sensor device is located in one end for fiber laser reflecting, and in the other end is a fiber loop mirror. It forms a linear-cavity fiber laser scheme basis. The end for laser output parallel connecting with two fiber Bragg grating filters. Because of the spectrum shift of the fiber Bragg grating sensor when temperature changed, it may detect the optic power reflectivity for the variation of the temperature. Furthermore, it can resolve the temperature up to 10−4° C. theoretically and can be applied for strain and temperature sensing with high precision.

Abstract: The present invention provides a power-equalizing multi-channel fiber laser array, which comprises a pumping laser source, a 1×N ratio splitter, a plurality of WDM couplers, some pieces of EDFs, some pieces of fiber grating pairs, and a power-equalizing device (which may include variable optical attenuators). The power-equalization approach is realized by: (1) adding in some variable optical attenuators; (2) controlling the pumping power ratio to the individual channels by a 1×N variable ratio splitter; (3) adjusting the fiber lengths or the Er3+ concentration; or (4) adjusting the fiber gratings reflectivity.