Abstract: Provided is an apparatus and method for detecting grout compactness in grouted splice sleeve, the apparatus comprises a probe assembly, which comprises at least one of capacitive probe and piezoelectric sensor and is arranged inside the grouted splice sleeve to detect parameters of the sleeve during grouting and curing and a detector, which comprises at least an analysis module that is connected with the probe assembly to obtain the detected parameters and carry out calculation and analysis for the parameters. The probe assembly is arranged inside the grouted splice sleeve and forms a loop with the detector during grouting, such that during the process of grouting, the detected parameters will be changed as the surrounding dielectric changes, therefore, the detector may determine in real time whether the grouted splice sleeve is fully grouted by calculating and analyzing the detected parameters, which achieves a faster and easier grout compactness detection.

Abstract: Provided is an apparatus and method for detecting grout compactness in grouted splice sleeve, the apparatus comprises a probe assembly, which comprises at least one of capacitive probe and piezoelectric sensor and is arranged inside the grouted splice sleeve to detect parameters of the sleeve during grouting and curing and a detector, which comprises at least an analysis module that is connected with the probe assembly to obtain the detected parameters and carry out calculation and analysis for the parameters. The probe assembly is arranged inside the grouted splice sleeve and forms a loop with the detector during grouting, such that during the process of grouting, the detected parameters will be changed as the surrounding dielectric changes, therefore, the detector may determine in real time whether the grouted splice sleeve is fully grouted by calculating and analyzing the detected parameters, which achieves a faster and easier grout compactness detection.

Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.

Abstract: The embodiments disclose a method of using a trimmed imprinted resist and chemical contrast pattern to guide a directed self-assembly (DSA) of a predetermined lamellar block copolymer (BCP), creating chromium (Cr) lamellar guiding lines using the BCP and DSA in a dry Cr lift-off process and etching the Cr lamellar guiding line patterns into a substrate to fabricate the imprint template.

Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.

Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.

Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.

Abstract: The embodiments disclose a method of using a trimmed imprinted resist and chemical contrast pattern to guide a directed self-assembly (DSA) of a predetermined lamellar block copolymer (BCP), creating chromium (Cr) lamellar guiding lines using the BCP and DSA in a dry Cr lift-off process and etching the Cr lamellar guiding line patterns into a substrate to fabricate the imprint template.

Abstract: The embodiments disclose a method of fabricating servo integrated templates including depositing a protective layer on servo zone resist layer patterns, patterning integrated data zone features into a substrate, depositing a protective layer on data zones and removing the servo zone protective layer and patterning integrated servo zone features into the substrate and removing the data zone protective layer creating a substrate template used in fabricating data and servo zone integrated patterned stacks.

Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.

Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.

Abstract: A system and method of calibrating optical measuring equipment includes optically measuring discrete objects of a first known predictable pattern from a calibration apparatus, wherein the first known predictable pattern is a bit pattern. A recording surface optical reader is calibrated based on the optically measuring. Using the first known predictable pattern, contamination is filtered from the results of the optically measuring.

Abstract: The embodiments disclose a block copolymer assembly structure, including a first pattern and second pattern with a first density of patterned features integrated in data and servo zones, a silicon substrate with thin film layers deposited thereon and patterned using the first density of first pattern and second pattern features and a template fabrication pattern with a second density greater than the first density created using ordered block copolymer periodic structures across a portion of the substrate.

Abstract: A system and method of calibrating optical measuring equipment includes optically measuring discrete objects of a first known predictable pattern from a calibration apparatus, wherein the first known predictable pattern is a bit pattern. A recording surface optical reader is calibrated based on the optically measuring. Using the first known predictable pattern, contamination is filtered from the results of the optically measuring.

Abstract: A system and method of calibrating optical measuring equipment includes optically measuring discrete objects of a first known predictable pattern from a calibration apparatus, wherein the first known predictable pattern is a bit pattern. A recording surface optical reader is calibrated based on the optically measuring. Using the first known predictable pattern, contamination is filtered from the results of the optically measuring.

Abstract: A system and method of calibrating optical measuring equipment includes optically measuring discrete objects of a first known predictable pattern from a calibration apparatus, wherein the first known predictable pattern is a bit pattern. A recording surface optical reader is calibrated based on the optically measuring. Using the first known predictable pattern, contamination is filtered from the results of the optically measuring.

Abstract: A method and apparatus of imprint lithography wherein the method includes depositing a material on a patterned surface of a conductive substrate, and pressing a transparent substrate and the conductive substrate together, wherein the pressing causes the material to conform to the patterned surface. Energy is applied to the material to form patterned material from the material. The transparent substrate and the conductive substrate are separated, wherein the patterned material adheres to the transparent substrate.

Abstract: A method of fabricating a patterned magnetic layer comprises sequential steps of: (a) providing a workpiece comprising a non-magnetic substrate, a layer of magnetic material overlying a surface of the substrate, and a layer of a non-magnetic material overlying the layer of magnetic material; (b) forming a layer of a mask material on the layer of non-magnetic material; (c) forming a topographical pattern comprising a plurality of recesses in the layer of mask material; (d) selectively removing portions of the layer of non-magnetic material proximate lower portions of the recesses, thereby exposing selected portions of the layer of magnetic material; (e) treating the exposed portions of the layer of magnetic material with a liquid for reducing the magnetic properties thereof; and (f) removing the topographically patterned layer of mask material.

Abstract: A system and method for forming servo patterns on magnetic media is disclosed. A magnetic film coated with a layer of polystyrene is stamped with a nickel stamper reproducing the negative image of the stamped pattern on the polystyrene. Ions are then accelerated towards the surface of the polystyrene, which stopps the ions in the areas where the polystyrene is thick and allows the ions to penetrate through to the magnetic layer in the areas where the polystyrene is thin. The ions, which penetrate through to the magnetic layer, interact with the magnetic layer altering the magnetic layer's structure reducing its coercivity (Hc) and remnant moment (Mrt). This reproduces the stamped polystyrene pattern on the magnetic layer. The polystyrene is then removed by oxygen plasma etching the surface leaving behind a patterned magnetic media.

Abstract: A system and method for forming servo patterns on magnetic medium is disclosed. A magnetic film coated with a layer of styrene-acrylonitrile is stamped with a nickel stamper reproducing the negative image of the stamper pattern on the styrene-acrylonitrile. Ions are then accelerated towards the surface of the styrene-acrylonitrile, which stops the ions in the areas where the styrene-acrylonitrile is thick and allows the ions to penetrate through to the magnetic layer in the areas where the styrene-acrylonitrile is thin. The ions, which penetrate through to the magnetic layer, interact with the magnetic layer altering the magnetic layer's structure reducing its coercivity (Hc) and remnant moment (Mrt). This reproduces the stamped styrene-acrylonitrile pattern on the magnetic layer. The styrene-acrylonitrile is then removed by oxygen plasma etching the surface leaving behind a patterned magnetic medium.