Patents by Inventor Hongbin Fang

Hongbin Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10373720
    Abstract: A migration prevention system for radioactive wastewater from an underground nuclear power plant. The underground nuclear power plant includes a nuclear island including an underground cavern group including a reactor cavity and auxiliary cavities. The migration prevention system includes a protective layer coating the reactor cavity and an impermeable layer surrounding the nuclear island. The protective layer includes an inner liner, a drainage layer, and a filling layer of rock fractures in that order. The inner liner is configured to prevent exosmosis of the radioactive wastewater of the reactor cavity. The drainage layer is configured to gather and drain seepage water. The impermeable layer is disposed in the periphery of the underground cavern group including the reactor cavity and the auxiliary cavities, and is configured to isolate the underground cavern group from natural underground water.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: August 6, 2019
    Assignee: CHANGJIANG SURVEY PLANNING DESIGN AND RESEARCH CO., LTD.
    Inventors: Xinqiang Niu, Qigui Yang, Hongbin Li, Shuda Zhou, Xin Zhao, Huatang Shi, Qianlong Han, Nianfeng Xu, Haibo Liu, Jie He, Weina Yu, Lijun Su, Yanguo Fang
  • Publication number: 20140166099
    Abstract: Crystalline photovoltaic (PV) cells and methods of manufacturing cells are described. One example method of manufacturing a PV cell includes depositing a plurality of first fingers on a crystalline silicon wafer. The first fingers extend in a first direction parallel to each other and comprise a substantially non-silver conductive material.
    Type: Application
    Filed: December 6, 2013
    Publication date: June 19, 2014
    Inventors: Hongbin Fang, Bo Li, Hsiu-Wu Guo, Bang Nguyen
  • Patent number: 8673679
    Abstract: Embodiments of the invention also generally provide a solar cell formation process that includes the formation of metal contacts over heavily doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used to reliably position a similarly shaped, or patterned, metal contact structure on the patterned heavily doped regions to allow an Ohmic contact to be made. The metal contact structure, such as fingers and busbars, are formed on the heavily doped regions so that a high quality electrical connection can be formed between these two regions.
    Type: Grant
    Filed: October 2, 2009
    Date of Patent: March 18, 2014
    Assignee: Applied Materials Italia S.R.L.
    Inventors: Marco Gallazzo, Timothy W. Weidman, Andrea Baccini, Sunhom (Steve) Paak, Hongbin Fang, Zhenhua Zhang
  • Patent number: 8309446
    Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: November 13, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Timothy W. Weidman, Rohit Mishra, Michael P. Stewart, Yonghwa Chris Cha, Kapila P. Wijekoon, Hongbin Fang
  • Patent number: 8183081
    Abstract: Embodiments of the invention generally provide a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming one or more layers on a backside of a solar cell substrate prior to the texturing process to prevent attack of the backside surface of the substrate. In one embodiment, the one or more layers are a metalized backside contact structure that is formed on the backside of the solar cell substrate. In another embodiment, the one or more layers are a chemical resistant dielectric layer that is formed over the backside of the solar cell substrate.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: May 22, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Timothy W. Weidman, Rohit Mishra, Michael P. Stewart, Yonghwa Chris Cha, Kapila P. Wijekoon, Hongbin Fang
  • Publication number: 20120100666
    Abstract: Embodiments of the invention generally provide a solar cell formation process that includes the formation of metal contacts over heavily doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used to reliably position a similarly shaped, or patterned, metal contact structure on the patterned heavily doped regions to allow an Ohmic contact to be made. The metal contact structure, such as fingers and busbars, are formed on the heavily doped regions so that a high quality electrical connection can be formed between these two regions.
    Type: Application
    Filed: October 26, 2011
    Publication date: April 26, 2012
    Applicant: APPLIED MATERIALS ITALIA S.R.L.
    Inventors: James M. Gee, Asaf Schlezinger, Marco Galiazzo, Andrea Baccini, Timothy W. Weidman, Sunhom Paak, Hongbin Fang, Zhenhua Zhang
  • Publication number: 20120040490
    Abstract: Embodiments of the invention also generally provide a solar cell formation process that includes the formation of metal contacts over heavly doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used to reliably position a similarly shaped, or patterned, metal contact structure on the patterned heavily doped regions to allow an Ohmic contact to be made. The metal contact structure, such as fingers and busbars, are formed on the heavily doped regions so that a high quality electrical connection can be formed between these two regions.
    Type: Application
    Filed: October 2, 2009
    Publication date: February 16, 2012
    Applicant: Applied Materials Italia S.R.L.
    Inventors: Marco Gallazzo, Timothy W. Weidman, Andrea Baccini, Sunhom (Steve) Paak, Hongbin Fang, Zhenhua Zhang
  • Patent number: 7910476
    Abstract: A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: March 22, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Hongbin Fang, Timothy Weidman, Fang Mei, Yaxin Wang, Arulkumar Shanmugasundram, Christopher D. Bencher, Mehul B. Naik
  • Patent number: 7745333
    Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.
    Type: Grant
    Filed: July 24, 2008
    Date of Patent: June 29, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Avgerinos V. Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao-Ming Huang, Ming Xi, Michael X. Yang, Hua Chung, Jeong Soo Byun
  • Publication number: 20100015756
    Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.
    Type: Application
    Filed: July 16, 2009
    Publication date: January 21, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Timothy W. Weidman, Rohit Mishra, Michael P. Stewart, Yonghwa Chris Cha, Kapila P. Wijekoon, Hongbin Fang
  • Publication number: 20100015751
    Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define active regions of the device and regions where the device and/or contact structure is to be located on a surface of a solar cell substrate. The method generally includes the steps of forming one or more layers on a backside of a solar cell substrate to prevent attack of the backside surface of the substrate, and provide a stable supporting surface, when the front side regions of a solar cell are formed. In one embodiment, the one or more layers are a metalized backside contact structure that is formed on the backside of the solar cell substrate. In another embodiment, the one or more layers are a chemical resistant dielectric layer that is formed over the backside of the solar cell substrate.
    Type: Application
    Filed: July 16, 2009
    Publication date: January 21, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Timothy W. Weidman, Rohit Mishra, Michael P. Stewart, Yonghwa Chris Cha, Kapila P. Wijekoon, Hongbin Fang
  • Patent number: 7605083
    Abstract: Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 ?, such as about 15 ?. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
    Type: Grant
    Filed: May 28, 2008
    Date of Patent: October 20, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
  • Patent number: 7542132
    Abstract: A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
    Type: Grant
    Filed: July 30, 2007
    Date of Patent: June 2, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Hongbin Fang, Josh Golden, Timothy W. Weidman, Yaxin Wang, Arulkumar Shanmugasundram
  • Publication number: 20090029544
    Abstract: A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
    Type: Application
    Filed: September 29, 2008
    Publication date: January 29, 2009
    Inventors: Hongbin Fang, Timothy Weidman, Fang Mei, Yaxin Wang, Arulkumar Shanmugasundram, Christopher D. Bencher, Mehul B. Naik
  • Publication number: 20080280438
    Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.
    Type: Application
    Filed: July 24, 2008
    Publication date: November 13, 2008
    Inventors: Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Aygerinos V. Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao-Ming Huang, Ming Xi, Michael X. Yang, Hua Chung, Jeong Soo Byun
  • Publication number: 20080227291
    Abstract: Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 ?, such as about 15 ?. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
    Type: Application
    Filed: May 28, 2008
    Publication date: September 18, 2008
    Inventors: KEN K. LAI, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
  • Patent number: 7405158
    Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.
    Type: Grant
    Filed: January 19, 2005
    Date of Patent: July 29, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Averginos V. Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao-Ming Huang, Ming Xi, Michael X. Yang, Hua Chung, Jeong Soo Byun
  • Patent number: 7396565
    Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).
    Type: Grant
    Filed: August 6, 2004
    Date of Patent: July 8, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Michael Xi Yang, Hyungsuk Alexander Yoon, Hui Zhang, Hongbin Fang, Ming Xi
  • Patent number: 7384867
    Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
    Type: Grant
    Filed: August 18, 2005
    Date of Patent: June 10, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
  • Publication number: 20080024762
    Abstract: A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
    Type: Application
    Filed: July 30, 2007
    Publication date: January 31, 2008
    Inventors: HONGBIN FANG, Josh Golden, Timothy Weidman, Yaxin Wang, Arulkumar Shanmugasundram