Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm?3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm?3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

Abstract: A hypersonic aircraft includes one or more leading edge assemblies that are designed to cool the leading edge of certain portions of the hypersonic aircraft that are exposed to high thermal loads, such as extremely high temperatures and/or thermal gradients. Specifically, the leading edge assemblies may include an outer wall tapered to a leading edge or stagnation point. A coolant supply may be in fluid communication with at least one fluid passageway that passes through the outer wall to deliver a flow of cooling fluid, such as liquid metal, to the stagnation point. The liquid metal vaporizes when the leading edge experiences a high heat load, thereby transpiration cooling the leading edge and/or facilitating a magnetohydrodynamic process for generating thrust or electricity.

Abstract: A porous electrolyte structure for a solid state battery is provided. The porous electrolyte structure has an interconnected ceramic matrix with a network of open pores disposed throughout a thickness of the porous electrolyte structure. The porous electrolyte structure includes a porosity of about 20% by volume to about 80% by volume. A solid state battery cell including the porous electrolyte structure and a method of making the solid state battery cell are also provided.

Abstract: A hypersonic aircraft includes one or more leading edge assemblies that are designed to cool the leading edge of certain portions of the hypersonic aircraft that are exposed to high thermal loads, such as extremely high temperatures and/or thermal gradients. Specifically, the leading edge assemblies may include an outer wall tapered to a leading edge or stagnation point. A coolant supply may be in fluid communication with at least one fluid passageway that passes through the outer wall to deliver a flow of cooling fluid, such as liquid metal, to the stagnation point. The liquid metal vaporizes when the leading edge experiences a high heat load, thereby transpiration cooling the leading edge and/or facilitating a magnetohydrodynamic process for generating thrust or electricity.

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015cm-3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

Abstract: A method for joining a metal component to a ceramic component is presented. The method includes disposing a metallic barrier layer on a metallized portion of the ceramic component, and joining the metal component to the metallized portion of the ceramic component through the metallic barrier layer. The metallic barrier layer comprises nickel and a melting point depressant. The metallic barrier layer is disposed by a screen printing process, followed by sintering the layer at a temperature less than about 1000 degrees Celsius. A sealing structure including a joint between a ceramic component and a metal component is also presented.

Abstract: A method for removing a coating from an article includes heating an article to a processing temperature. The article includes a first material in contact with a second material, the first material comprising silicon, and the second material comprising an oxide comprising silicon. The heating is performed in an environment having a partial pressure of oxygen that is less than an equilibrium partial pressure of oxygen for chemical equilibrium between the first material and the second material at the processing temperature.

Abstract: An environmental barrier coating system for a component of a gas turbine includes at least one rare earth disilicate layer and at least one rare earth monosilicate layer. At least one of the at least one rare earth disilicate layer or the at least one rare earth monosilicate layer includes an alkaline earth oxide dopant.

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

Abstract: The present invention relates to a use of Chinese medicine composition in preparation of medicine for secondary prevention of myocardial infarction. Said Chinese medicine composition is prepared from a formula comprising the crude drugs by the following weight percentages: Radix Astragali 22.2%˜66.8%, Radix Salviae Miltiorrhizae 11.6%˜33.4%, Radix Notoginseng 2.5%˜13.5%, and Lignum Dalbergiae Odoriferae 14.5%˜44.3%.

Abstract: A method for joining a metal component to a ceramic component is presented. The method includes disposing a metallic barrier layer on a metallized portion of the ceramic component, and joining the metal component to the metallized portion of the ceramic component through the metallic barrier layer. The metallic barrier layer comprises nickel and a melting point depressant. The metallic barrier layer is disposed by a screen printing process, followed by sintering the layer at a temperature less than about 1000 degrees Celsius. A sealing structure including a joint between a ceramic component and a metal component is also presented.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: The present invention relates to a use of Chinese medicine composition in preparation of medicine for secondary prevention of myocardial infarction. Said Chinese medicine composition is prepared from a formula comprising the crude drugs by the following weight percentages: Radix Astragali 22.2%˜66.8%, Radix Salviae Miltiorrhizae 11.6%˜33.4%, Radix Notoginseng 2.5%˜13.5%, and Lignum Dalbergiae Odoriferae 14.5%˜44.3%.