Abstract: This disclosure provides a back contact solar cell and a method for manufacturing a back contact solar cell. In one example, a back contact solar cell includes a silicon substrate having first regions and second regions alternately distributed on a back surface of the silicon substrate, and a first doped semiconductor layer formed on a first region on the back surface of the silicon substrate. A groove structure concaving inward the silicon substrate relative to a surface of the first region is formed on a second region. An end portion of the first doped semiconductor layer adjacent to the second region is arranged in a suspended manner.

Abstract: The present disclosure provides back-contact solar cells, and methods for manufacturing back-contact solar cells. In one aspect, a back-contact cell comprising a silicon substrate, a first doped semiconductor layer on a back surface of the silicon substrate in first regions, and a second doped semiconductor layer on the back surface of the silicon substrate in second regions. The first regions and the second regions are alternately distributed at intervals. The back surface of the silicon substrate comprises an isolation region between a first region and a second region adjacent to the first region. A surface of the isolation region is recessed into the silicon substrate. A depth by which the surface of the isolation region is recessed into the silicon substrate relative to the surface of the at least one of the first regions is less than 3000 nm.

Abstract: The present disclosure discloses a solar cell and a manufacturing method therefor. An example method includes providing a semiconductor substrate having a first region and a second region, forming a tunneling passivation layer on at least the first region, and perform wet chemical processing on the first region and the second region to form a first surface structure in the first region and a second surface structure in the second region. An etching rate of etching the first region that is covered by the tunneling passivation layer is different from an etching rate of etching the second region. The first surface structure is different from the second surface structure.

Abstract: A solar cell and a manufacturing method of the solar cell are provided. The solar cell includes a silicon substrate, the silicon substrate is deposited with a plurality of fine-grids, the plurality of fine-grids have ohmic contact with the silicon substrate; a plurality of main-grids are disposed on the silicon substrate; the plurality of main-grids intersect and electrically contact with the plurality of fine-grids; at least a part of the plurality of main-grids is formed by sintering an electrode slurry. The plurality of fine-grids and the plurality of main-grids are formed by a combination of a high temperature metallization (sintering) and a low temperature metallization (depositing), to overcome a high cost by using screen printing of silver slurry, in addition, due to the plurality of fine-grids having ohmic contact with the silicon substrate, the solar cell has advantages of small contact resistance and high current collection efficiency.

Abstract: A solar cell and a manufacturing method of the solar cell are provided. The solar cell includes a silicon substrate, the silicon substrate is deposited with a plurality of fine-grids, the plurality of fine-grids have ohmic contact with the silicon substrate; a plurality of main-grids are disposed on the silicon substrate; the plurality of main-grids intersect and electrically contact with the plurality of fine-grids; at least a part of the plurality of main-grids is formed by sintering an electrode slurry. The plurality of fine-grids and the plurality of main-grids are formed by a combination of a high temperature metallization (sintering) and a low temperature metallization (depositing), to overcome a high cost by using screen printing of silver slurry, in addition, due to the plurality of fine-grids having ohmic contact with the silicon substrate, the solar cell has advantages of small contact resistance and high current collection efficiency.