Abstract: To further capture an image in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photoelectric conversion element, a charge accumulation unit, a transfer transistor, a detection unit, and a connection transistor. The photoelectric conversion element generates a charge by photoelectric conversion. The charge accumulation unit accumulates the charge and generates a voltage according to an amount of the charge. The transfer transistor transfers the charge from the photoelectric conversion element to the charge accumulation unit. The detection unit detects whether or not a change amount of a photocurrent according to the amount of the charge exceeds a predetermined threshold. The connection transistor connects the charge accumulation unit and the detection unit to cause the photocurrent to flow.

Abstract: A wide-beam planar backfire and bidirectional circularly-polarized antenna. An entire planar sectorial magnetic dipole is of a semi-closed structure, the planar sectorial magnetic dipole comprises two identical sectorial patches and a vertical short-circuit wall, and the vertical short-circuit wall is connected with straight sides of the two sectorial patches along a radial direction of the planar sectorial magnetic dipole; two sets of concentric annular electric dipoles are respectively used as a top concentric annular radiating element and a bottom concentric annular radiating element, as well as a top concentric annular reflector and a bottom anti-concentric annular reflector; and the top concentric annular radiating element is connected with an upper surface of the planar sectorial magnetic dipole through a top connecting branch, and the bottom concentric annular radiating element is connected with a lower surface of the planar sectorial magnetic dipole through a bottom connecting branch.

Abstract: An imaging device includes a plurality of pixels including a first pixel and a second pixel, and a differential amplifier including a first amplification transistor, a second amplification transistor, and a first load transistor. The first load transistor receives a power source voltage. The imaging device includes a first signal line coupled to the first amplification transistor and the first load transistor, a second signal line coupled to the second amplification transistor, and a first reset transistor configured to receive the power source voltage. A gate of the first reset transistor is coupled to the first load transistor. The first pixel includes a first photoelectric conversion element and the first amplification transistor, and the second pixel includes a second photoelectric conversion element and the second amplification transistor.

Abstract: An imaging device according to the present disclosure includes: a pixel including a photoelectric converter configured to generate a signal in response to entering light, a storage configured to store data corresponding to the signal, and an output section configured to output the data stored in the storage; and a controller configured to control the output section to output the data in a case where the data stored in the storage satisfies a predetermined condition.

Abstract: A solid-state imaging device that detects the presence or absence of an address event further captures an image. The solid-state imaging device includes a detection pixel and a counting pixel. In the solid-state imaging device, the detection pixel detects whether or not a predetermined address event has occurred, depending on whether or not the amount of change in the amount of incident light exceeds a predetermined threshold. Further, in the solid-state imaging device, in a case where an address event has occurred, the counting pixel counts the number of photons entering during a predetermined exposure period and outputs a pixel signal indicating the count value.

Abstract: In a solid-state image sensor that detects presence or absence of an address event, erroneous detection of the address event is suppressed. Each of a plurality of pixels executes detection processing for detecting whether or not a change amount of an incident light amount exceeds a predetermined threshold, and outputting a detection result. An abnormal pixel determination unit determines whether or not each of the plurality of pixels has an abnormality, and enables a pixel without an abnormality and disables a pixel with an abnormality. A control unit performs control for causing the enabled pixel to execute detection processing and control for fixing the detection result of the disabled pixel to a specific value.

Abstract: The present disclosure provides an adaptive modulation method for a naive Bayes classifier-based energy harvesting relay system. First, a sending end determines its modulation mode based on a status of a data buffer of a relay, so that sent data does not exceed a storage capability of the relay. Then, based on data sent by the sending end, and channel status information and energy harvesting status information within a period of time, the relay determines an optimal modulation mode used by the relay within the period of time. After that, the modulation mode, the channel status information, and the energy harvesting status information are used as training data to obtain a classification model based on a naive Bayes classifier algorithm. In this way, the relay can adaptively select a modulation mode when only knowing of channel information and energy information in a current timeslot.

Abstract: In a solid-state image sensor that compares an amount of change in light amount and a threshold, time required to adjust the threshold is shortened. The solid-state image sensor includes a voltage comparison unit and a count unit. In the solid-state image sensor, the voltage comparison unit compares an analog signal according to an amount of change in incident light with a predetermined voltage indicating a boundary of a predetermined voltage range, and outputs a comparison result as a voltage comparison result. Furthermore, in the solid-state image sensor, the count unit counts a count value every time the voltage comparison result indicating that the analog signal falls outside the voltage range is output.

Abstract: The present invention discloses a sector dual-resonant dipole antenna. Radiation elements of the antenna are two identical sector patches. Two identical rectangular notches can be symmetrically arranged or two identical tuning stubs can be symmetrically loaded on the sector patches at positions deviating from the central axis of the two sector patches. Exciting points are symmetrically arranged on sides of the sector patches close to a central axis. The present invention realizes a wide beamwidth radiation characteristic through a two-dimensional sectorial resonator, and then the notches are arranged or the tuning stubs are loaded at appropriate positions of two arms of the sectorial resonator, and thereby a dual-resonant characteristic can be realized within a working band.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes: providing a substrate includes a first region and a second region; forming a first polycrystalline silicon layer on the substrate, wherein the first polycrystalline silicon layer covers the first region and the second region; forming a stacked structure on the first polycrystalline silicon layer; forming a protective layer on the stacked structure; forming a patterned photoresist layer on the protective layer, wherein the patterned photoresist layer exposes the protective layer in the second region; removing the protective layer and the stacked structure in the second region to expose the first polycrystalline silicon layer in the second region; removing the patterned photoresist layer; and forming a second polycrystalline silicon layer on the protective layer in the first region and the first polycrystalline silicon layer in the second region.

Abstract: The present invention discloses a triple-resonant null frequency scanning antenna, which belongs to the technical fields of the Internet of Things and microwave. The triple-resonant null frequency scanning antenna comprises a circular sector magnetic dipole arranged on a medium substrate, and rectangular notches are symmetrically arranged on a sector patch of the circular sector magnetic dipole. The circular sector magnetic dipole is fixed on the medium substrate by a second shorting pin and third shorting pins, an flared angle of the circular sector magnetic dipole is a first central angle, and two third shorting pins are present and are symmetrically arranged on both sides of the angular bisector of the first central angle.

Abstract: A wide-beam planar backfire and bidirectional circularly-polarized antenna. An entire planar sectorial magnetic dipole is of a semi-closed structure, the planar sectorial magnetic dipole comprises two identical sectorial patches and a vertical short-circuit wall, and the vertical short-circuit wall is connected with straight sides of the two sectorial patches along a radial direction of the planar sectorial magnetic dipole; two sets of concentric annular electric dipoles are respectively used as a top concentric annular radiating element and a bottom concentric annular radiating element, as well as a top concentric annular reflector and a bottom anti-concentric annular reflector; and the top concentric annular radiating element is connected with an upper surface of the planar sectorial magnetic dipole through a top connecting branch, and the bottom concentric annular radiating element is connected with a lower surface of the planar sectorial magnetic dipole through a bottom connecting branch.

Abstract: To suppress voltage variations due to transistor switching noise in a solid-state image sensor including a transistor that initializes a differentiating circuit. A capacitance supplies a charge corresponding to an amount of variation in a predetermined pixel voltage to a predetermined input terminal. A voltage output unit outputs, as an output voltage, a voltage corresponding to an input voltage at the input terminal from a predetermined output terminal. A reset transistor supplies one of a positive charge or a negative charge during a predetermined period to control the output voltage to an initial value in a case where initialization is instructed. A charge supply unit supplies the other of the positive charge or the negative charge when the predetermined period elapses.

Abstract: An integrated microfluidic photoionization detector (PID) is provided including a microfluidic ionization chamber a microfluidic ultraviolet radiation chamber that is configured to generate ultraviolet photons. An ultrathin transmissive window is disposed between the microfluidic ionization chamber and the microfluidic ultraviolet radiation chamber that permits the ultraviolet photons to pass from the microfluidic ultraviolet radiation chamber into the microfluidic ionization chamber. Detection systems for one or more VOC analytes are also provided that include a gas chromatography (GC) unit including at least one gas chromatography column and an integrated microfluidic photoionization detector (PID) disposed downstream of the gas chromatography (GC) unit.

Abstract: A servo includes a motor, an output shaft used to drive an external component and having an external lateral surface, a gear set arranged between the motor and the output shaft and used to transmit power from the motor to the output shaft. The gear set includes an output gear arranged around the output shaft. The output gear defines a through hole that allows the output shaft to pass therethrough. The through hole has an internal lateral surface facing the external lateral surface. The servo further includes a connection ring arranged around the output shaft between the external lateral surface and the internal lateral surface. The connection ring is used to connect the output gear to the output shaft when a load placed on the output shaft is less than a preset value, and disconnect the output gear from the output shaft when the load exceeds the preset value.

Abstract: An imaging device includes a plurality of pixels including a first pixel and a second pixel, and a differential amplifier including a first amplification transistor, a second amplification transistor, and a first load transistor. The first load transistor receives a power source voltage. The imaging device includes a first signal line coupled to the first amplification transistor and the first load transistor, a second signal line coupled to the second amplification transistor, and a first reset transistor configured to receive the power source voltage. A gate of the first reset transistor is coupled to the first load transistor. The first pixel includes a first photoelectric conversion element and the first amplification transistor, and the second pixel includes a second photoelectric conversion element and the second amplification transistor.

Abstract: A method for forming a semiconductor structure is disclosed. Among a stack of mask layers, any other layers above the lowermost thin film layer are subsequently removed to expose the lowermost thin film layer and then the lowermost thin film layer is separately removed by a dry etching process. This improves an etching uniformity of the lowermost thin film layer and ameliorates the issue of material residues. Moreover, thanks to the anisotropic characteristic of the dry etching process, lateral etching of side walls of a trench isolation structure can be mitigated.

Abstract: To reduce power consumption in a solid-state image sensor that measures a time. The solid-state image sensor includes a count unit, a count control unit, a clock unit, and an estimation unit. The count unit counts the number of times a photon has been incident within a predetermined exposure period, and outputs a count value. The count control unit performs control to stop the count unit and performs a request of time information in a case where the count value has reached a predetermined value before the predetermined exposure period elapses. The clock unit measures a time and outputs the time information in response to the request. The estimation unit estimates the number of incident times of a photon within the predetermined exposure period on the basis of the output time information.

Abstract: An imaging device includes a plurality of pixels including a first pixel and a second pixel, and a differential amplifier including a first amplification transistor, a second amplification transistor, and a first load transistor. The first load transistor receives a power source voltage. The imaging device includes a first signal line coupled to the first amplification transistor and the first load transistor, a second signal line coupled to the second amplification transistor, and a first reset transistor configured to receive the power source voltage. A gate of the first reset transistor is coupled to the first load transistor. The first pixel includes a first photoelectric conversion element and the first amplification transistor, and the second pixel includes a second photoelectric conversion element and the second amplification transistor.

Abstract: To reduce power consumption in a solid-state image sensor that detects weak light. The solid-state image sensor includes a photodiode, a resistor, a measuring unit, and a control unit. The photodiode photoelectrically converts incident light and outputs a photocurrent. The resistor drops a potential of one end of the photodiode to a value lower than a power supply potential every time a photocurrent is output. The measuring unit measures illuminance of the incident light on the basis of a frequency of dropping of the potential of one end. The control unit controls the power supply potential to a lower value as the measured illuminance is higher.