Abstract: The present disclosure provides an ultrasonic fingerprint apparatus and an electronic device. The ultrasonic fingerprint apparatus includes an ultrasonic fingerprint chip and a piezoelectric transducer arranged above the ultrasonic fingerprint chip; the piezoelectric transducer includes a piezoelectric layer, an upper electrode located above the piezoelectric layer, and a lower electrode located below the piezoelectric layer; the ultrasonic fingerprint chip includes a substrate and a plurality of metal layers arranged in a first region of the substrate, the lower electrode is located above a second region of the substrate, a top metal layer among the plurality of metal layers includes N drive traces, a passivation layer is provided above the top metal layer, and provided with a first window corresponding to the N drive traces, and the upper electrode extends from an upper surface of the piezoelectric layer into the first window.

Abstract: The present disclosure discloses a strain of Lactobacillus pentosus capable of relieving pathological characteristics of mice infected with influenza virus and application thereof, and belongs to the field of microorganisms. The strain of L. pentosus CCFM1227 provided by the present disclosure can effectively improve the innate immune response of the mice infected with influenza virus so as to prevent and/or relieve influenza virus infection. In addition, the L. pentosus CCFM1227 of the present disclosure can be used for fermenting phloretin to produce deaminotyrosine. Therefore, the L. pentosus CCFM1227 has a great application prospect in preparation of products for preventing and/or relieving influenza virus infection.

Abstract: The epitaxy sequentially includes from bottom to top a C-doped c-GaN high-resistance layer (11), an intrinsic u-GaN channel layer (12), an AlGaN barrier layer (13), a magnesium diffusion blocking layer (14), and a Mg-doped p-GaN cap layer (15) that are formed on a substrate (10). The magnesium diffusion blocking layer (14) includes a Mg-doped p-AlGaN layer (141). Mg in the Mg-doped p-AlGaN layer (141) is sufficiently passivated to in the Mg-H bond form, to reduce the activity of Mg. A doping concentration of Mg in the Mg-doped p-AlGaN layer (141) is greater than that of Mg in the Mg-doped p-GaN cap layer (15). A specific concentration difference of Mg is formed between them, so that Mg in the Mg-doped p-GaN cap layer (15) can be effectively blocked from diffusing downward into the AlGaN barrier layer (13) and the intrinsic u-GaN channel layer (12), thereby improving conducting performance of the device.

Abstract: The epitaxial structure sequentially includes from bottom to top a C-doped c-GaN high-resistance layer, a diffusion blocking layer, an intrinsic u-GaN channel layer, and an AlGaN barrier layer that are formed on a substrate. The diffusion blocking layer is a laminate structure or a superlattice structure; where the laminate structure comprises at least two layers selected from a group consisting of at least one Si3N4 layer, at least one AlN layer, and at least one GaN layer, and the laminate structure comprises at least one Si3N4 layer and also comprises at least one AlN layer or at least one GaN layer; where the superlattice structure is formed by periodically alternating laminate structures. The Si3N4 layer can block C atoms in the C-doped c-GaN high-resistance layer from diffusing into the intrinsic u-GaN channel layer. The AlN layer and the GaN layer provide growth transition for the diffusion blocking layer.

Abstract: The present application discloses a gravimeter zero-drift correction method, apparatus and electronic device, which belongs to the field of gravimeter correction. The gravimeter zero-drift correction method includes: acquiring standard comparison data and actual monitoring data of the gravimeter; determining a plurality of difference values between the actual monitoring data and the standard comparison data; determining the presence or absence of an inflection point among a plurality of difference values; correcting a plurality of difference values in the absence of inflection point among a plurality of difference values; correcting difference values on both sides of a demarcation point respectively by taking an infection point as a demarcation point, in the presence of an inflection point among a plurality of difference values.

Abstract: The present application discloses a gravimeter zero-drift correction method, apparatus and electronic device, which belongs to the field of gravimeter correction. The gravimeter zero-drift correction method includes: acquiring standard comparison data and actual monitoring data of the gravimeter; determining a plurality of difference values between the actual monitoring data and the standard comparison data; determining the presence or absence of an inflection point among a plurality of difference values; correcting a plurality of difference values in the absence of inflection point among a plurality of difference values; correcting difference values on both sides of a demarcation point respectively by taking an infection point as a demarcation point, in the presence of an inflection point among a plurality of difference values.

Abstract: A m-xylene adsorbent contains 94 to 99.9 wt % of a Y molecular sieve and 0.1 to 6 wt % of a matrix. The Y molecular sieve consists of a non-crystal-transformed Y molecular sieve and a Y molecular sieve produced by a crystal transformation. The non-crystal-transformed Y molecular sieve is a mesoporous nano Y molecular sieve, which has a crystalline grain size of 20 to 450 nanometers, contains two types of mesoporous pores, and respectively has most probable pore diameters of 5 to 20 nanometers and 25 to 50 nanometers. The adsorbent is used for adsorptive separation of m-xylene from mixed C8 aromatic hydrocarbons.

Abstract: A process for producing para-xylene and ethylbenzene from C8 aromatics containing ethylbenzene includes the steps of sending C8 aromatics containing ethylbenzene to an ethylbenzene liquid-phase adsorption separation device, wherein a suction liquid containing ethylbenzene and a suction residual liquid are obtained after the adsorption separation, and the desorbents in the suction liquid and the suction residual liquid are removed to obtain ethylbenzene and a suction residual oil; sending the suction residual oil to a para-xylene adsorption separation device, and unadsorbed components are discharged as a raffinate from the adsorbent bed; the adsorbent bed is rinsed with a desorbent to desorb the para-xylene therein and obtain an extract; the desorbents in the extract and the raffinate are respectively removed to obtain para-xylene and a raffinate oil; sending the raffinate oil to a xylene isomerization device to carry out xylene isomerization, and the isomerization product is fractionated.

Abstract: The disclosure discloses a strain of Bifidobacterium breve capable of preventing and relieving psoriasis and application thereof, belonging to the field of microbial technologies and medical technologies. The disclosure provides new uses of B. breve CCFM1078 in inhibiting the release of IL-23/Th17 axis related inflammatory factors, and relieving the psoriasis. The B. breve CCFM1078 of the disclosure can relieve the lesion skin of psoriasis-like mice, and can inhibit thickening of the skin epidermal layer, so that the IL-23 level, the IL-22 level and the IL-17 level in the skin decrease by 20.3%, 22.0% and 18.3%, respectively. The B. breve CCFM1078 has a great application prospect in the preparation of a product (such as a food, a drug or a health food) for preventing and/or treating psoriasis.

Abstract: The present disclosure relates to comb-block copolymers and methods thereof. In some embodiments, a copolymer includes a first block comprising an ethylene-propylene copolymer; and a second block comprising a high density polyethylene. In some embodiments, a polyethylene composition includes the copolymer and a branched vinyl/vinylidene-terminated high density polyethylene. In some embodiments, a process for producing a polyethylene composition includes polymerizing ethylene, at a temperature of at least 100° C., by introducing the ethylene to a first catalyst system having a first catalyst compound and a first activator to form a branched vinyl/vinylidene-terminated high density polyethylene. The process includes introducing the branched vinyl/vinylidene-terminated high density polyethylene to additional ethylene, propylene, and a second catalyst system having a second catalyst compound and a second activator. The process includes obtaining the polyethylene composition.

Abstract: A process for producing para-xylene and ethylbenzene from C8 aromatics containing ethylbenzene includes the steps of sending C8 aromatics containing ethylbenzene to an ethylbenzene liquid-phase adsorption separation device, wherein a suction liquid containing ethylbenzene and a suction residual liquid are obtained after the adsorption separation, and the desorbents in the suction liquid and the suction residual liquid are removed to obtain ethylbenzene and a suction residual oil; sending the suction residual oil to a para-xylene adsorption separation device, and unadsorbed components are discharged as a raffinate from the adsorbent bed; the adsorbent bed is rinsed with a desorbent to desorb the para-xylene therein and obtain an extract; the desorbents in the extract and the raffinate are respectively removed to obtain para-xylene and a raffinate oil; sending the raffinate oil to a xylene isomerization device to carry out xylene isomerization, and the isomerization product is fractionated.

Abstract: The present invention relates to a high-power thermoelectric conversion module and thermoelectric conversion system. The thermoelectric conversion module includes: a first substrate made of ceramic; a second substrate made of ceramic and disposed opposite to the first substrate; a plurality of third electrodes and thermoelectric conversion elements arranged crosswise in a matrix between the first substrate and the second substrate; a first electrode disposed between the first substrate and the thermoelectric conversion elements; and a second electrode disposed between the second substrate and the thermoelectric conversion elements. The first electrode is connected to one ends of the thermoelectric conversion elements and the third electrodes whose tops are flush with the one ends of the thermoelectric conversion elements, respectively.

Abstract: An e-fuse and a manufacturing method thereof, and a memory cell are provided. The method includes: providing a semiconductor substrate including a preset active region; forming an isolating region on the substrate, where the isolating region and the preset active region have a height difference and are connected by at least one side wall; forming a negative electrode and a positive electrode on the preset active region; and forming a fuse link on the side wall for connecting the negative electrode and the positive electrode. Accordingly, the line width of the fuse link is out of the limitation of the limit line width of the semiconductor process, the actual line width of the e-fuse may be smaller than the limit line width of the semiconductor process, and low fusing current is required for fusing.

Abstract: An optical path modulator, applied to a fingerprint identification apparatus, is configured to direct reflected light reflected back from a surface of a finger to an optical detection unit disposed below the optical path modulator, and the optical detection unit is configured to detect the received reflected light, where an array of through holes is arranged between an upper surface and a lower surface of the optical path modulator, and the array of through holes includes a plurality of tilt through holes, where each tilt through hole has a tilt angle greater than 0°, and the tilt angle is an angle between an axial direction of the tilt through hole and a normal direction perpendicular to a surface of the optical path modulator. In a case of the same hole depth, a thinner optical path modulator can be obtained.

Abstract: An e-fuse and a manufacturing method thereof, and a memory cell are provided. The method includes: providing a semiconductor substrate including a preset active region; forming an isolating region on the substrate, where the isolating region and the preset active region have a height difference and are connected by at least one side wall; forming a negative electrode and a positive electrode on the preset active region; and forming a fuse link on the side wall for connecting the negative electrode and the positive electrode. Accordingly, the line width of the fuse link is out of the limitation of the limit line width of the semiconductor process, the actual line width of the e-fuse may be smaller than the limit line width of the semiconductor process, and low fusing current is required for fusing.

Abstract: The present disclosure provides an anti-fuse, which includes at least one anti-fuse unit. The anti-fuse unit includes: a field-effect transistor, including a substrate, and a first doping region, a second doping region and a gate electrode that are disposed on the substrate; and a first electrode, arranged on the substrate and forming an anti-fuse capacitor with the substrate, the first electrode being connected to the first doping region, and configured to break down the anti-fuse capacitor by voltage adjustment between the second doping region and the substrate and write data to the anti-fuse unit, or configured to detect a current flowing through the second doping region by voltage adjustment for the gate electrode and determine whether to write data to the anti-fuse unit. By using the first electrode and the substrate as a pair of plates of the anti-fuse capacitor, a port of the anti-fuse unit may be omitted.

Abstract: An optical path modulator, applied to a fingerprint identification apparatus, is configured to direct reflected light reflected back from a surface of a finger to an optical detection unit disposed below the optical path modulator, and the optical detection unit is configured to detect the received reflected light, where an array of through holes is arranged between an upper surface and a lower surface of the optical path modulator, and the array of through holes includes a plurality of tilt through holes, where each tilt through hole has a tilt angle greater than 0°, and the tilt angle is an angle between an axial direction of the tilt through hole and a normal direction perpendicular to a surface of the optical path modulator. In a case of the same hole depth, a thinner optical path modulator can be obtained.

Abstract: Provided is a method of manufacturing a Pb—Te based thermoelectric material, the method comprising: forming a Pb—Te based by mixture mixing element lead, element tellurium and a dopant; melting and then quenching the mixture; and obtaining a thermoelectric sintered body by hot-pressing a molded body obtained after the quenching.