Abstract: The present invention relates to a method for preparing, activating and regenerating a metal supported catalyst, comprising: treating a Ma-Mb-Mc metal supported catalyst at 10-700° C. by using an ammonia or nitrogen-containing organic matter, wherein the Ma metal is an active metal selected from one or more of a noble metal atom or a transition metal, the support is a common industrial porous catalyst, and the Ma metal is dispersed on the support in a state of single atomic site. According to the Md-Mb-Mc metal supported noble metal/zinc catalyst treated by the method of the present invention, the direct dehydrogenation conversion rate and selectivity of catalyzing light alkanes are remarkably improved; the method for preparing the catalyst is simple in process, the catalytic activity after regeneration is still kept, and the catalyst can be industrially produced on a large scale.

Abstract: The present invention relates to a preparation method for a noble metal single atom three-way catalyst, a catalyst obtained by using the method, and a use of the catalyst for purifying motor vehicle exhaust gas. In the present invention, a nitrogen-containing compound is used for treating a noble metal single atom catalyst precursor, avoiding the agglomeration of noble metal single atoms into nanocrystalline particles. The catalyst obtained by the preparation method of the present invention is resistant to high temperature, is not prone to agglomerate, and is resistant to poisoning, and the amount of usage of noble metals is reduced while the purification efficiency of the catalyst for motor vehicle exhaust gas is effectively improved.

Abstract: A dual-chamber suction filtering device and filtering method, belonging to a surgical waste liquid collecting device, and solving the problem in the prior art that drainage fluid of an endoscope shaver system and a plasma surgical system is easily contaminated and cannot be separated in sections.

Abstract: Provided are a pixel of an uncooled infrared focal plane detector and a preparation method therefor. The pixel includes a structure of three layers sequentially located on a semiconductor substrate from bottom to top. The first layer is a bridge structure including a metal reflection layer, an insulation dielectric layer, a first supporting layer, a first support layer protection layer, a first metal electrode layer and a first silicon nitride dielectric layer. The second layer is a thermal conversion structure including a second support layer, a second support layer protection layer, a thermal sensitive layer, a thermal sensitive layer production layer, a second metal electrode layer and a second silicon nitride dielectric layer. The third layer is an absorption structure including a third support layer, an absorption layer and an absorption layer protection layer.

Abstract: Provided are a pixel of an uncooled infrared focal plane detector and a preparation method therefor. The pixel includes a structure of three layers sequentially located on a semiconductor substrate from bottom to top. The first layer is a bridge structure including a metal reflection layer, an insulation dielectric layer, a first supporting layer, a first support layer protection layer, a first metal electrode layer and a first silicon nitride dielectric layer. The second layer is a thermal conversion structure including a second support layer, a second support layer protection layer, a thermal sensitive layer, a thermal sensitive layer production layer, a second metal electrode layer and a second silicon nitride dielectric layer. The third layer is an absorption structure including a third support layer, an absorption layer and an absorption layer protection layer.