Patents by Inventor Hong-Chen Yu

Hong-Chen Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabricating process for polysilicon gate
    Patent number: 6200886
    Abstract: A fabrication process for a polysilicon gate is described in which a silicon dioxide layer of various thicknesses is formed on the substrate and on the polysilicon gate with an overlying anti-reflection layer. The silicon dioxide layer is removed with enough silicon dioxide layer remaining to cover the sidewalls of the polysilicon gate and the silicon substrate before the removal of the anti-reflection layer. The sidewalls of the polysilicon gate and the silicon substrate are thus simultaneously protected during the removal of the anti-reflection layer.
    Type: Grant
    Filed: October 28, 1999
    Date of Patent: March 13, 2001
    Assignees: United Silicon Incorporated, United Microelectronics Corp.
    Inventors: Hong-Chen Yu, Hsi-Mao Hsiao, Hsi-Chin Lin, Chun-Lung Chen