Patents by Inventor Hongda JIAO

Hongda JIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-calibration apparatus and method for real-time temperature measurement system of MOCVD device
    Patent number: 10957564
    Abstract: A self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device belong to the technical field of semiconductor manufacturing. The apparatus comprises a MOCVD reactor chamber (1) and an optical detector (6). The MOCVD reactor chamber (1) comprises an epitaxial wafer (4). A detection window (5) is provided on the top of the MOCVD reactor chamber (1). The optical detector (6) emits detection light beams whose wavelengths are respectively ?1 and ?2 toward the epitaxial wafer (4) through the detection window (5). The detection light beams are reflected by the epitaxial wafer (4) to form reflected light beams which are detected by the optical detector (6). In the method, points corresponding to the actual thermal radiation ratios are depicted on the theoretical thermal radiation ratio-temperature curve according to actual thermal radiation ratios, and values of the temperatures T corresponding to the points are substituted into formulas to obtain m1 and m2 respectively.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: March 23, 2021
    Assignee: AK OPTICS TECHNOLOGY CO., LTD.
    Inventors: Chengmin Li, Dong Yan, Linzi Wang, Jianpeng Liu, Hongda Jiao, Tang Zhang, Xiaochao Ma
  • SELF-CALIBRATION APPARATUS AND METHOD FOR REAL-TIME TEMPERATURE MEASUREMENT SYSTEM OF MOCVD DEVICE
    Publication number: 20190237348
    Abstract: A self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device belong to the technical field of semiconductor manufacturing. The apparatus comprises a MOCVD reactor chamber (1) and an optical detector (6). The MOCVD reactor chamber (1) comprises an epitaxial wafer (4). A detection window (5) is provided on the top of the MOCVD reactor chamber (1). The optical detector (6) emits detection light beams whose wavelengths are respectively ?1 and ?2 toward the epitaxial wafer (4) through the detection window (5). The detection light beams are reflected by the epitaxial wafer (4) to form reflected light beams which are detected by the optical detector (6). In the method, points corresponding to the actual thermal radiation ratios are depicted on the theoretical thermal radiation ratio-temperature curve according to actual thermal radiation ratios, and values of the temperatures T corresponding to the points are substituted into formulas to obtain m1 and m2 respectively.
    Type: Application
    Filed: August 19, 2014
    Publication date: August 1, 2019
    Applicant: BEI Optics Technology Company Limited
    Inventors: Chengmin LI, Dong YAN, Linzi WANG, Jianpeng LIU, Hongda JIAO, Tang ZHANG, Xiaochao MA