Abstract: Embodiments of the present application relate to the technical field of optical communications, and particularly relate to an optical fiber connection discovery method, an electronic device, and a computer readable storage medium. The method comprises: turning off each laser in a network element to be processed; turning on a target laser; and determining a connection position of an optical fiber of the target laser in an optical signal propagation direction according to a configuration state of each wavelength selective switch (WSS) of said network element and an optical detection result of each port of said network element.

Abstract: The present disclosure discloses a method and an apparatus for data processing, a storage medium and an electronic device, where for each second unit in the embodiments of the present disclosure, a plurality of communication links are provided between the first unit and the second unit. The first unit, in response to a data operation request, sends the data operation request to the second unit through the plurality of communication links between the first unit and the second unit. The second unit processes the target data to be processed according to the data operation instruction in the data operation request to obtain a processing result, and sends the processing result to the first unit via a plurality of communication links. The first unit executes a response strategy for the data operation request based on the processing result.

Abstract: The present disclosure discloses a method, a device, a storage medium and a electronic device for data acquisition. The method for data acquisition comprises: determining an initial state for the target port and performing state monitoring; if the initial state is monitored to change, taking the changed state as the target state; upon monitoring the change of the initial state, after a first monitoring period, determining the completion of the jitters-eliminating for the signal received by the target port; and during a second monitoring period, determining whether a state for the target port monitored each time is the target state; if yes, taking the target state as a state for the target port and storing the target state; and performing data acquisition according to the stored state corresponding to the target port.

Abstract: A semiconductor device, including first and second conductive patterns, a plurality of first semiconductor chips each having a switching device, a plurality of second semiconductor chips each having a diode device, a plurality of first wires, respectively coupling low-potential electrodes of the switching devices and the second conductive pattern, and a plurality of second wires, respectively coupling anode electrodes of the diode devices and the second conductive pattern. Lengths of the first and second wires are substantially equal. The first semiconductor chips and the second semiconductor chips are arranged on the first conductive pattern in two rows, each row being in a first direction and including at least one first semiconductor chip and at least one second semiconductor chip, the first direction being parallel to a predetermined side of the first conductive pattern. The first and second wires are each in a second direction orthogonal to the first direction.

Abstract: The present invention relates to naphthylurea derivatives. Such substances can significantly inhibit VEGFR2 and PDGFR-? receptor tyrosine kinase phosphorylation at nanomolar concentration levels. It is a novel type of tyrosine kinase inhibitors which can be used in the treatment of tyrosine kinase-mediated diseases or symptoms such as malignancies and ocular diseases accompanied with pathologic neovascularization.

Abstract: The present invention relates to naphthylurea derivatives. Such substances can significantly inhibit VEGFR2 and PDGFR-? receptor tyrosine kinase phosphorylation at nanomolar concentration levels.

Abstract: The method for manufacturing a semiconductor device according to the invention includes forming a thick silicon oxide film uniformly in a trench. Argon ions or the like implanted obliquely into the trench to form an ion implanted damaged region selectively in the portion of the silicon oxide film on the trench sidewall utilizing the shadowing effects of the oblique ion implantation. The silicon oxide film is wet etched to selectively remove the silicon oxide film in the ion implanted damaged region utilizing the etching rate difference, wherein the etching rate is faster in the damaged region than in the undamaged region. As a result, a thick residual oxide film is formed on the bottom and the lower sidewall portion of the trenchwithout causing any bird's beak.

Abstract: The method for manufacturing a semiconductor device according to the invention includes forming a thick silicon oxide film uniformly in a trench. Argon ions or the like implanted obliquely into the trench to form an ion implanted damaged region selectively in the portion of the silicon oxide film on the trench sidewall utilizing the shadowing effects of the oblique ion implantation. The silicon oxide film is wet etched to selectively remove the silicon oxide film in the ion implanted damaged region utilizing the etching rate difference, wherein the etching rate is faster in the damaged region than in the undamaged region. As a result, a thick residual oxide film is formed on the bottom and the lower sidewall portion of the trenchwithout causing any bird's beak.