Abstract: The present disclosure discloses a treatment process and treatment system of enhanced up-flow multiphase wastewater oxidation. The treatment process includes the following steps: 1) the wastewater is fed into the up-flow multiphase wastewater oxidation system for oxidation treatment; 2) the wastewater is fed to the solid-liquid separation system for solid-liquid separation, the separated heterogeneous catalytic carrier (5) is fed back to the up-flow multiphase wastewater oxidation system, and the wastewater is fed to the neutralization and degassing system; 3) the wastewater is fed to the neutralization and degassing system to adjust a pH of the wastewater to 5.5-7.5, and then is degassed by stirring; 4) the wastewater is fed to the flocculation and sedimentation system for sludge-water separation, a supernatant is discharged, and an outward harmless treatment is performed after a pressure filtration of a sedimentary iron sludge.

Abstract: A semiconductor device, including first and second conductive patterns, a plurality of first semiconductor chips each having a switching device, a plurality of second semiconductor chips each having a diode device, a plurality of first wires, respectively coupling low-potential electrodes of the switching devices and the second conductive pattern, and a plurality of second wires, respectively coupling anode electrodes of the diode devices and the second conductive pattern. Lengths of the first and second wires are substantially equal. The first semiconductor chips and the second semiconductor chips are arranged on the first conductive pattern in two rows, each row being in a first direction and including at least one first semiconductor chip and at least one second semiconductor chip, the first direction being parallel to a predetermined side of the first conductive pattern. The first and second wires are each in a second direction orthogonal to the first direction.

Abstract: The present invention relates to naphthylurea derivatives. Such substances can significantly inhibit VEGFR2 and PDGFR-? receptor tyrosine kinase phosphorylation at nanomolar concentration levels. It is a novel type of tyrosine kinase inhibitors which can be used in the treatment of tyrosine kinase-mediated diseases or symptoms such as malignancies and ocular diseases accompanied with pathologic neovascularization.

Abstract: The present invention relates to naphthylurea derivatives. Such substances can significantly inhibit VEGFR2 and PDGFR-? receptor tyrosine kinase phosphorylation at nanomolar concentration levels.

Abstract: The method for manufacturing a semiconductor device according to the invention includes forming a thick silicon oxide film uniformly in a trench. Argon ions or the like implanted obliquely into the trench to form an ion implanted damaged region selectively in the portion of the silicon oxide film on the trench sidewall utilizing the shadowing effects of the oblique ion implantation. The silicon oxide film is wet etched to selectively remove the silicon oxide film in the ion implanted damaged region utilizing the etching rate difference, wherein the etching rate is faster in the damaged region than in the undamaged region. As a result, a thick residual oxide film is formed on the bottom and the lower sidewall portion of the trenchwithout causing any bird's beak.

Abstract: The method for manufacturing a semiconductor device according to the invention includes forming a thick silicon oxide film uniformly in a trench. Argon ions or the like implanted obliquely into the trench to form an ion implanted damaged region selectively in the portion of the silicon oxide film on the trench sidewall utilizing the shadowing effects of the oblique ion implantation. The silicon oxide film is wet etched to selectively remove the silicon oxide film in the ion implanted damaged region utilizing the etching rate difference, wherein the etching rate is faster in the damaged region than in the undamaged region. As a result, a thick residual oxide film is formed on the bottom and the lower sidewall portion of the trenchwithout causing any bird's beak.