Abstract: An exemplary electrode lead includes a flexible body formed of a flexible insulating material and that comprises a fantail region that connects to a cochlear implant configured to be implanted within a recipient and that extends to a ground electrode located toward a proximal end of the electrode lead, an electrode contact disposed on a side of the flexible body, a coiled electrode wire provided within the flexible body so as to extend along a length of the flexible body and electrically connect the electrode contact to a signal source, and a coiled reinforcing element provided within the flexible body so as to extend together with the coiled electrode wire along the length of the flexible body. The coiled reinforcing element may only be provided within a proximal portion of the electrode lead. Corresponding methods of manufacturing an electrode lead are also described.

Abstract: An exemplary electrode lead includes a flexible body formed of a flexible insulating material, an electrode contact disposed on a side of the flexible body, a coiled electrode wire provided within the flexible body so as to extend along a length of the flexible body and electrically connect the electrode contact to a signal source, and a coiled reinforcing element provided within the flexible body so as to extend together with the coiled electrode wire along the length of the flexible body. A winding direction of the coiled electrode wire is opposite a winding direction of the coiled reinforcing element and a winding pitch of the coiled electrode wire is smaller than a winding pitch of the coiled reinforcing element. Corresponding methods of manufacturing an electrode lead are also described.

Abstract: An exemplary electrode lead includes a flexible body formed of a flexible insulating material, an electrode contact disposed on a side of the flexible body, a coiled electrode wire provided within the flexible body so as to extend along a length of the flexible body and electrically connect the electrode contact to a signal source, and a coiled reinforcing element provided within the flexible body so as to extend together with the coiled electrode wire along the length of the flexible body. A winding direction of the coiled electrode wire is opposite a winding direction of the coiled reinforcing element and a winding pitch of the coiled electrode wire is smaller than a winding pitch of the coiled reinforcing element. Corresponding methods of manufacturing an electrode lead are also described.

Abstract: This invention provides methods for the processing of platinum metallized high temperature co-fired ceramic (HTCC) components with minimum deleterious reactions between platinum and the glass constituents of the ceramic-glass body. The process comprises co-firing a multilayer laminate green ceramic-glass body with via structures filled with a platinum powder-based material in a reducing atmosphere with a specified level of oxygen partial pressure. The oxygen partial pressure should be maintained above a minimum threshold value for a given temperature level.

Abstract: An implantable micro-miniature device is disclosed. The device comprises a thin hermetic insulating coating and at least one thin metal secondary coating over the hermetic insulating layer in order to protect the insulating layer from the erosive action of body fluids or the like. In one embodiment the insulating layer is ion beam assisted deposited (IBAD) alumina and the secondary coating is titanium. The device may be a small electronic device such as a silicon integrated circuit chip. The thickness of the insulating layer may be ten microns or less and the thickness of the secondary layer may be between about 0.1 and about 15 microns.

Abstract: This invention provides methods for the processing of platinum metallized high temperature co-fired ceramic (HTCC) components with minimum deleterious reactions between platinum and the glass constituents of the ceramic-glass body. The process comprises co-firing a multilayer laminate green ceramic-glass body with via structures filled with a platinum powder-based material in a reducing atmosphere with a specified level of oxygen partial pressure. The oxygen partial pressure should be maintained above a minimum threshold value for a given temperature level.

Abstract: This invention provides methods for processing of platinum metallized high temperature co-fired ceramic (HTCC) components with minimum deleterious reaction between platinum and the glass constituents of the ceramic-glass body. The process comprises co-firing a multilayer laminate green ceramic-glass body with via structures filled with a platinum powder-based material in a reducing atmosphere with a specified level of oxygen partial pressure. The oxygen partial pressure should be maintained above a minimum threshold value for a given temperature level.

Abstract: A damping rubber spring for an automobile suspension, including: n rubber layers (2), n being a natural number not less than 3; n+1 metal partition layers (1) including an upper partition layer (4) and a lower partition layer (5), the n rubber layers (2) and the n+1 metal partition layers (1) being laminated alternately with each other, and the upper partition layer (4) being disposed in parallel with the lower partition layer (5), wherein an m-th rubber layer (2) starting from the upper partition layer (4) has a thickness or cross section area that is the same as that of an m-th rubber layer (2) starting from the lower partition layer (5).

Abstract: An implantable micro-miniature device is disclosed. The device comprises a thin hermetic insulating coating and at least one thin metal secondary coating over the hermetic insulating layer in order to protect the insulating layer from the erosive action of body fluids or the like. In one embodiment the insulating layer is ion beam assisted deposited (IBAD) alumina and the secondary coating is titanium. The device may be a small electronic device such as a silicon integrated circuit chip. The thickness of the insulating layer may be ten microns or less and the thickness of the secondary layer may be between about 0.1 and about 15 microns.

Abstract: An auxiliary rubber spring for an automobile suspension, comprising: N layers of metal partitions, N being an integer greater than or equal to 1, and a transverse section of each metal partition being arc-shaped; N+1 rubber layers, the rubber layers being alternately lapped with the metal partitions, and a transversal section of each rubber layer being arc-shaped; a supporting plate provided with a first convex arc surface on one side thereof, the first convex arc surface being bonded to a first concave arc surface of an outermost rubber layer; and a connecting plate provided with a second concave arc surface on one thereof, the second concave arc surface being bonded to a second convex arc surface of another outermost rubber layer. The auxiliary rubber spring for an automobile suspension according to the present invention may increase fatigue resistance of the rubber spring and effectively extend service life thereof.

Abstract: An implantable micro-miniature device is disclosed. The device comprises a thin hermetic insulating coating and at least one thin polymer or metal secondary coating over the hermetic insulating layer in order to protect the insulating layer from the erosive action of body fluids or the like. In one embodiment the insulating layer is ion beam assisted deposited (IBAD) alumina and the secondary coating is a parylene polymer. The device may be a small electronic device such as a silicon integrated circuit chip. The thickness of the insulating layer may be ten microns or less and the thickness of the secondary layer may be between about 0.1 and about 15 microns.

Abstract: A damping rubber spring for an automobile suspension, including: n rubber layers (2), n being a natural number not less than 3; n+1 metal partition layers (1) including an upper partition layer (4) and a lower partition layer (5), the n rubber layers (2) and the n+1 metal partition layers (1) being laminated alternately with each other, and the upper partition layer (4) being disposed in parallel with the lower partition layer (5), wherein an m-th rubber layer (2) starting from the upper partition layer (4) has a thickness or cross section area that is the same as that of an m-th rubber layer (2) starting from the lower partition layer (5).

Abstract: An auxiliary rubber spring for an automobile suspension, comprising: N layers of metal partitions, N being an integer greater than or equal to 1, and a transverse section of each metal partition being arc-shaped; N+1 rubber layers, the rubber layers being alternately lapped with the metal partitions, and a transversal section of each rubber layer being arc-shaped; a supporting plate provided with a first convex arc surface on one side thereof, the first convex arc surface being bonded to a first concave arc surface of an outermost rubber layer; and a connecting plate provided with a second concave arc surface on one thereof, the second concave arc surface being bonded to a second convex arc surface of another outermost rubber layer. The auxiliary rubber spring for an automobile suspension according to the present invention may increase fatigue resistance of the rubber spring and effectively extend service life thereof.

Abstract: An implantable micro-miniature device is disclosed. The device comprises a thin hermetic insulating coating and at least one thin polymer or metal secondary coating over the hermetic insulating layer in order to protect the insulating layer from the erosive action of body fluids or the like. In one embodiment the insulating layer is ion beam assisted deposited (IBAD) alumina and the secondary coating is a parylene polymer. The device may be a small electronic device such as a silicon integrated circuit chip. The thickness of the insulating layer may be ten microns or less and the thickness of the secondary layer may be between about 0.1 and about 15 microns.

Abstract: An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.

Abstract: An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.

Abstract: An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.

Abstract: An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.

Abstract: An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.

Abstract: An implantable micro-miniature device is disclosed. The device comprises a thin hermetic insulating coating and at least one thin polymer or metal secondary coating over the hermetic insulating layer in order to protect the insulating layer from the erosive action of body fluids or the like. In one embodiment the insulating layer is ion beam assisted deposited (IBAD) alumina and the secondary coating is a parylene polymer. The device may be a small electronic device such as a silicon integrated circuit chip. The thickness of the insulating layer may be ten microns or less and the thickness of the secondary layer may be between about 0.1 and about 15 microns.