Patents by Inventor HONGJI LIAO

HONGJI LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11851784
    Abstract: A high-purity semi-insulating silicon carbide crystal growing apparatus and a method therefor are provided, the apparatus comprising a growth crucible, a bottom part of the growth crucible having inserted a gas pipe, a top part of the growth crucible being provided with a growth crucible cover, a feedstock crucible having a bowl-shaped structure being disposed in the growth crucible, an upper part of the feedstock crucible being provided with a baffle, a bottom part of the feedstock crucible being provided with a ring-shaped supporting feedstock crucible bottom foot, the diameter of the feedstock crucible bottom foot being ? the diameter of the feedstock crucible, and the feedstock crucible bottom foot having disposed thereon 8-36 evenly distributed gas holes.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: December 26, 2023
    Assignee: Fujian Beidian Material Technologies Co., Ltd.
    Inventors: Huarong Chen, Jie Zhang, Hongji Liao, Zebin Chen
  • Patent number: 11499246
    Abstract: A crystal raw material loading device and a crystal growth device includes a plurality of bearing units which are arranged adjacent to each other horizontally in turn, and the multiple bearing units include a first bearing unit arranged at one end of a small plane far away from the seed crystal bearing device. Along the direction from one end of the small plane far away from the seed crystal to one end of the small plane close to the seed crystal, from the first bearing unit to the bearing unit on the side of the small plane close to the seed crystal, the height of the raw material that can be carried by each bearing unit is reduced in turn.
    Type: Grant
    Filed: March 25, 2021
    Date of Patent: November 15, 2022
    Assignee: HUNAN SANAN SEMICONDUCTOR CO., LTD.
    Inventors: Zebin Chen, Minfeng Wang, Hongji Liao, Huarong Chen
  • Publication number: 20210332497
    Abstract: A high-purity semi-insulating silicon carbide crystal growing apparatus and a method therefor are provided, the apparatus comprising a growth crucible, a bottom part of the growth crucible having inserted a gas pipe, a top part of the growth crucible being provided with a growth crucible cover, a feedstock crucible having a bowl-shaped structure being disposed in the growth crucible, an upper part of the feedstock crucible being provided with a baffle, a bottom part of the feedstock crucible being provided with a ring-shaped supporting feedstock crucible bottom foot, the diameter of the feedstock crucible bottom foot being ? the diameter of the feedstock crucible, and the feedstock crucible bottom foot having disposed thereon 8-36 evenly distributed gas holes.
    Type: Application
    Filed: October 14, 2019
    Publication date: October 28, 2021
    Inventors: Huarong CHEN, Jie ZHANG, Hongji LIAO, Zebin CHEN
  • Publication number: 20210301417
    Abstract: A crystal raw material loading device and a crystal growth device includes a plurality of bearing units which are arranged adjacent to each other horizontally in turn, and the multiple bearing units include a first bearing unit arranged at one end of a small plane far away from the seed crystal bearing device. Along the direction from one end of the small plane far away from the seed crystal to one end of the small plane close to the seed crystal, from the first bearing unit to the bearing unit on the side of the small plane close to the seed crystal, the height of the raw material that can be carried by each bearing unit is reduced in turn.
    Type: Application
    Filed: March 25, 2021
    Publication date: September 30, 2021
    Inventors: ZEBIN CHEN, MINFENG WANG, HONGJI LIAO, HUARONG CHEN