Patents by Inventor Hongji Ql

Hongji Ql has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Doped gallium oxide crystalline material and preparation method and application thereof
    Patent number: 11098416
    Abstract: A Group VB element doped with a ?-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the ?—Ga2O3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10?4 to 1×104?·cm, and/or the carrier concentration is in the range of 5×1012 to 7×1020/cm3. The preparation method comprises steps of: mixing M2O5 and Ga2O3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity ?-Ga2O3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: August 24, 2021
    Assignee: Shanghai Institute of Optics And Fine Mechanics, Chinese Academy of Sciences
    Inventors: Changtai Xia, Qinglin Sai, Wei Zhou, Hongji Ql
  • GALLIUM OXIDE-DOPED CRYSTALLINE MATERIAL AND PREPARATION METHOD AND APPLICATION THEREOF
    Publication number: 20190352798
    Abstract: A Group VB element doped with a ?-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the ?—Ga2O3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10?4 to 1×104?·cm, and/or the carrier concentration is in the range of 5×1012 to 7×1020/cm3. The preparation method comprises steps of: mixing M2O5 and Ga2O3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity ?-Ga2O3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.
    Type: Application
    Filed: July 10, 2019
    Publication date: November 21, 2019
    Inventors: Changtai XIA, Qinglin SAI, Wei ZHOU, Hongji Ql