Abstract: A molecular marker combination linked to quantitative traits of tea plant (+)-catechin content, including a SNP site 1, a SNP site 2, a SNP site 3, a SNP site 4, a SNP site 5, a SNP site 6, a SNP site 7 and a SNP site 8, which are located in tea genomes Scaffold4239:309117, Scaffold3614: 66549, Scaffold349: 3413816, Scaffold1989: 2316385, Scaffold451: 940283, Scaffold3727:442660, Scaffold115:803980 and Scaffold920:281727, respectively, and genotypes thereof are extremely significantly correlated with the (+)-catechin content is provided. A detection method for detecting each site, and one or more molecular marker site is used to evaluate the tea plant (+)-catechin content.

Abstract: A group of anti-BCMA single domain antibodies, as well as genes of the single domain antibodies in the group, a vector containing the single domain antibodies in the group, a chimeric antigen receptor, and a T cell modified by a chimeric antigen receptor, and detection and treatment application of the single domain antibodies in the group. The anti-BCMA single domain antibodies have high activity, high stability, high specificity, and high binding capability.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A method of fabricating a plurality of monolithic, cascaded, multiple color III-nitride light-emitting diodes (LEDs) with independent junction control, wherein: each of the LEDs is comprised of at least an n-type III-nitride layer, a III-nitride emitting layer, and a p-type III-nitride layer; at least two of the LEDs are separated by an n-type tunnel junction (TJ) insertion layer grown by selective area growth on or above the p-type III-nitride layer of one of the LEDs; the p-type III-nitride layer of one of the LEDs and the n-type tunnel junction insertion layer form a tunnel junction; and the p-type III-nitride layer of one of the LEDs is at least partially covered by the n-type tunnel junction insertion layer.

Abstract: A chimeric antigen receptor (CAR) may be include: a BCMA binding domain, a transmembrane domain, a co-stimulatory domain, and an intracellular signaling domain, wherein the BCMA binding domain includes heavy chain complementarity determining regions HCDR1-3, and the amino acid sequences of the HCDR1-3 are successively as shown in SEQ ID NO: 1-3.

Abstract: A transmission mechanism includes a planet carrier, a planet gear, a pin, a sliding bearing, and thrust bearings. The planet gear is rotatably disposed on the planet carrier through the pin. The thrust bearings are disposed between one end of the planet gear and the planet carrier, and between another end of the planet gear and the planet carrier, respectively. A first lubrication gap is formed between each thrust bearing and an end surface the planet gear. The sliding bearing is sleeved on the pin and is disposed between the planet gear and the pin. A second lubrication gap is formed between an inner circumference of the sliding bearing and the pin or between an outer circumference of the sliding bearing and the planet gear. Oil channels are disposed on the pin. Lubricating oil enters the first lubrication gap and the second lubrication gap through the oil channels respectively.

Abstract: A molecular marker combination linked to quantitative traits of tea plant (+)-catechin content, including a SNP site 1, a SNP site 2, a SNP site 3, a SNP site 4, a SNP site 5, a SNP site 6, a SNP site 7 and a SNP site 8, which are located in tea genomes Scaffold4239:309117, Scaffold3614: 66549, Scaffold349: 3413816, Scaffold1989: 2316385, Scaffold451: 940283, Scaffold3727:442660, Scaffold115:803980 and Scaffold920:281727, respectively, and genotypes thereof are extremely significantly correlated with the (+)-catechin content is provided. A detection method for detecting each site, and one or more molecular marker site is used to evaluate the tea plant (+)-catechin content.

Abstract: A transmission mechanism includes a planet carrier, a planet gear, a pin, a sliding bearing, and thrust bearings. The planet gear is rotatably disposed on the planet carrier through the pin. The thrust bearings are disposed between one end of the planet gear and the planet carrier, and between another end of the planet gear and the planet carrier, respectively. A first lubrication gap is formed between each thrust bearing and an end surface the planet gear. The sliding bearing is sleeved on the pin and is disposed between the planet gear and the pin. A second lubrication gap is formed between an inner circumference of the sliding bearing and the pin or between an outer circumference of the sliding bearing and the planet gear. Oil channels are disposed on the pin. Lubricating oil enters the first lubrication gap and the second lubrication gap through the oil channels respectively.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A fastening apparatus for connecting a thrust pad to a carrying member. The thrust pad is provided with a first recess and a communication hole communicating with the first recess. The carrying member is provided with a threaded hole. The aperture of the communication hole is greater than the aperture of the threaded hole. The fastening apparatus includes a bolt and a connection structure. An end cap of the bolt is disposed in the first recess. A screw of the bolt passes through the connection structure and is threaded into the threaded hole. The connection structure is able to be clamped between the end cap and the carrying member.

Abstract: A method to fabricate micro-size III-nitride light emitting diodes (?LEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an InxAlyGazN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the ?LEDs have a low forward the GaN layers, which reduces a depletion width of the tunnel junction and increases the tunneling probability. The ?LEDs are fabricated with dimensions that vary from 25 to 10,000 ?m2. It was found that the InxAlyGazN insertion layer can reduce the forward voltage at 20 A/cm2 by at least 0.6 V. The tunnel junction ?LEDs with an n-type and p-type InxAlyGazN insertion layer had a low forward voltage at 20 A/cm2 that was very stable. At dimensions smaller than 1600 ?m2, the low forward voltage is less than 3.2 V.

Abstract: A bearing lubrication structure for a wind power gearbox includes a housing, a bearing, a planet carrier, and an oil scraper assembly. The planet carrier is rotatably disposed on the housing through the bearing. A first end face of the planet carrier and a second end face of the housing form a receiving chamber. The oil scraper assembly is disposed on the second end face and is located in the receiving chamber. The oil scraper assembly includes an oil scraper member. The oil scraper member is configured to, when the planet carrier rotates, collect oil from the first end face and make the oil flow into the bearing.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A bearing lubrication structure for a wind power gearbox includes a housing, a bearing, a planet carrier, and an oil scraper assembly. The planet carrier is rotatably disposed on the housing through the bearing. A first end face of the planet carrier and a second end face of the housing form a receiving chamber. The oil scraper assembly is disposed on the second end face and is located in the receiving chamber. The oil scraper assembly includes an oil scraper member. The oil scraper member is configured to, when the planet carrier rotates, collect oil from the first end face and make the oil flow into the bearing.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A molecular marker combination linked to quantitative traits of tea plant caffeine content, including a SNP site 1, a SNP site 2, a SNP site 3, a SNP site 4, a SNP site 5 and a SNP site 6, which are located in tea genomes Scaffold4239:309117, Scaffold115:803980, Scaffold720:596655, Scaffold3614:66549, Scaffold349:3413816 and Scaffold920:281727, respectively, and genotypes thereof are extremely significantly correlated with the caffeine content is provided. A detection method for detecting each site, and one or more molecular marker site is used to evaluate the tea plant caffeine content.

Abstract: A molecular marker combination linked to quantitative traits of tea plant (+)-catechin content, including a SNP site 1, a SNP site 2, a SNP site 3, a SNP site 4, a SNP site 5, a SNP site 6, a SNP site 7 and a SNP site 8, which are located in tea genomes Scaffold4239:309117, Scaffold3614: 66549, Scaffold349: 3413816, Scaffold1989: 2316385, Scaffold451: 940283, Scaffold3727:442660, Scaffold115:803980 and Scaffold920:281727, respectively, and genotypes thereof are extremely significantly correlated with the (+)-catechin content is provided. A detection method for detecting each site, and one or more molecular marker site is used to evaluate the tea plant (+)-catechin content.

Abstract: A group of anti-BCM single domain antibodies, as well as genes of the single domain antibodies in the group, a vector containing the single domain antibodies in the group, a chimeric antigen receptor, and a T cell modified by a chimeric antigen receptor, and detection and treatment application of the single domain antibodies in the group. The anti-BCMA single domain antibodies have high activity, high stability, high specificity, and high binding capability.