Abstract: A molecular marker combination linked to quantitative traits of tea plant (+)-catechin content, including a SNP site 1, a SNP site 2, a SNP site 3, a SNP site 4, a SNP site 5, a SNP site 6, a SNP site 7 and a SNP site 8, which are located in tea genomes Scaffold4239:309117, Scaffold3614: 66549, Scaffold349: 3413816, Scaffold1989: 2316385, Scaffold451: 940283, Scaffold3727:442660, Scaffold115:803980 and Scaffold920:281727, respectively, and genotypes thereof are extremely significantly correlated with the (+)-catechin content is provided. A detection method for detecting each site, and one or more molecular marker site is used to evaluate the tea plant (+)-catechin content.

Abstract: Embodiments of the present disclosure provide a method for smart gas firefighting linkage based on government safety supervision, wherein the method is executed by a smart gas government safety supervision management platform based on an Internet-of-Things (IoTs) system for smart gas firefighting linkage based on government safety supervision.

Abstract: An image construction method and system for a heating area is provided. The method includes: obtaining an initial image according to a heating structure diagram and a building structure diagram of the heating area; segmenting the initial image according to heating attribute of the heating area to obtain a plurality of segmentation sub-graphs; performing first collection on a surface temperature of a heating pipeline according to pre-deployed surface devices corresponding to the segmentation sub-graphs, and setting first heating labels corresponding to the segmentation sub-graphs, and meanwhile, performing second collection on a regional temperature of a sub-area of the heating pipeline being located according to a pre-deployed monitoring device corresponding to the segmentation sub-graphs, and setting second heating labels; performing position and temperature analysis on a label setting result of each of the segmentation sub-graphs to obtain a heating image of the heating area.

Abstract: The disclosure provides a security analysis method and system based on protocol state, which relates to the technical field of protocol security protection. The method includes the following: a node traversal table is built, the node traversal table is scanned and analyzed according to the protocol trigger sequence rule, a first security evaluation factor of a protocol stack is determined, and a second security evaluation factor of each protocol is determined based on protocol normal application rule, and the trustworthiness degree of the second security factor is determined based on the first security factor, and the second security factor is revised based on the trustworthiness degree, and the security state of the protocol is determined according to the revised second security factor, thus the analysis of the protocol state is realized, and the security of the protocol can be accurately determined.

Abstract: A group of anti-BCMA single domain antibodies, as well as genes of the single domain antibodies in the group, a vector containing the single domain antibodies in the group, a chimeric antigen receptor, and a T cell modified by a chimeric antigen receptor, and detection and treatment application of the single domain antibodies in the group. The anti-BCMA single domain antibodies have high activity, high stability, high specificity, and high binding capability.

Abstract: Embodiments of the present application provide a method, an apparatus and a system for wireless intelligent decision-making communication, where the method includes: obtaining data information of a network node; where the data information includes scheduling request information, resource pre-occupancy indication information, network status information, wireless channel information, and communication capability information of the network node; predicting an application scenario of the network node at a preset time according to the data information; determining a decision result containing a multi-domain combination according to the application scenario of the network node at the preset time and the communication capability information of the network node, and activating the multi-domain combination of the network node at the preset time; where the multi-domain combination is corresponding to the application scenario of the network node.

Abstract: The disclosure provides a security analysis method and system based on protocol state, which relates to the technical field of protocol security protection. The method includes the following: a node traversal table is built, the node traversal table is scanned and analyzed according to the protocol trigger sequence rule, a first security evaluation factor of a protocol stack is determined, and a second security evaluation factor of each protocol is determined based on protocol normal application rule, and the trustworthiness degree of the second security factor is determined based on the first security factor, and the second security factor is revised based on the trustworthiness degree, and the security state of the protocol is determined according to the revised second security factor, thus the analysis of the protocol state is realized, and the security of the protocol can be accurately determined.

Abstract: Provided is a speaker, including frame, vibration unit, and magnetic circuit unit driving the vibration unit and having magnetic gap, the vibration unit including diaphragm fixed to the frame, voice coil component fixed to the diaphragm and driving the diaphragm, and lower voice diaphragm component supporting the voice coil component. The voice coil component includes voice coil inserted in the magnetic gap and holder fixed to the diaphragm and the voice coil, the voice coil includes first and second voice coil portions. The first voice coil portion is arranged close to the lower voice diaphragm component and is fixed to the lower voice diaphragm component through the holder. The first voice coil portion includes two first sides and second side connecting thereto, and the second voice coil portion protrudes away from the second side. The voice coil component has greater circumference than the racetrack voice coil, enabling better acoustic performance.

Abstract: A method for evaluating rock drillability by a nano-indentation test on a rock cutting includes: conducting a nano-indentation test on a rock cutting sample, acquiring a displacement-load curve of an indenter, and calculating a micro-hardness under the nano-indentation test; calculating mineral composition of the rock cutting sample based on a statistical distribution characteristic of the micro-hardness, and transforming the micro-hardness under the nano-indentation test on the rock cutting sample into a macro-hardness; and calculating a rock drillability grade characterized by the micro-hardness under the nano-indentation test on the rock cutting sample based on a correlation between the macro-hardness of the rock cutting sample and the rock drillability grade. In the context of few downhole rock samples and high cost, the method overcomes the limitation of sample size and shape on conventional testing and solves the difficult problem of mechanical parameter testing of deep rocks.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A method of fabricating a plurality of monolithic, cascaded, multiple color III-nitride light-emitting diodes (LEDs) with independent junction control, wherein: each of the LEDs is comprised of at least an n-type III-nitride layer, a III-nitride emitting layer, and a p-type III-nitride layer; at least two of the LEDs are separated by an n-type tunnel junction (TJ) insertion layer grown by selective area growth on or above the p-type III-nitride layer of one of the LEDs; the p-type III-nitride layer of one of the LEDs and the n-type tunnel junction insertion layer form a tunnel junction; and the p-type III-nitride layer of one of the LEDs is at least partially covered by the n-type tunnel junction insertion layer.

Abstract: A chimeric antigen receptor (CAR) may be include: a BCMA binding domain, a transmembrane domain, a co-stimulatory domain, and an intracellular signaling domain, wherein the BCMA binding domain includes heavy chain complementarity determining regions HCDR1-3, and the amino acid sequences of the HCDR1-3 are successively as shown in SEQ ID NO: 1-3.

Abstract: A transmission mechanism includes a planet carrier, a planet gear, a pin, a sliding bearing, and thrust bearings. The planet gear is rotatably disposed on the planet carrier through the pin. The thrust bearings are disposed between one end of the planet gear and the planet carrier, and between another end of the planet gear and the planet carrier, respectively. A first lubrication gap is formed between each thrust bearing and an end surface the planet gear. The sliding bearing is sleeved on the pin and is disposed between the planet gear and the pin. A second lubrication gap is formed between an inner circumference of the sliding bearing and the pin or between an outer circumference of the sliding bearing and the planet gear. Oil channels are disposed on the pin. Lubricating oil enters the first lubrication gap and the second lubrication gap through the oil channels respectively.

Abstract: A molecular marker combination linked to quantitative traits of tea plant (+)-catechin content, including a SNP site 1, a SNP site 2, a SNP site 3, a SNP site 4, a SNP site 5, a SNP site 6, a SNP site 7 and a SNP site 8, which are located in tea genomes Scaffold4239:309117, Scaffold3614: 66549, Scaffold349: 3413816, Scaffold1989: 2316385, Scaffold451: 940283, Scaffold3727:442660, Scaffold115:803980 and Scaffold920:281727, respectively, and genotypes thereof are extremely significantly correlated with the (+)-catechin content is provided. A detection method for detecting each site, and one or more molecular marker site is used to evaluate the tea plant (+)-catechin content.

Abstract: A transmission mechanism includes a planet carrier, a planet gear, a pin, a sliding bearing, and thrust bearings. The planet gear is rotatably disposed on the planet carrier through the pin. The thrust bearings are disposed between one end of the planet gear and the planet carrier, and between another end of the planet gear and the planet carrier, respectively. A first lubrication gap is formed between each thrust bearing and an end surface the planet gear. The sliding bearing is sleeved on the pin and is disposed between the planet gear and the pin. A second lubrication gap is formed between an inner circumference of the sliding bearing and the pin or between an outer circumference of the sliding bearing and the planet gear. Oil channels are disposed on the pin. Lubricating oil enters the first lubrication gap and the second lubrication gap through the oil channels respectively.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A fastening apparatus for connecting a thrust pad to a carrying member. The thrust pad is provided with a first recess and a communication hole communicating with the first recess. The carrying member is provided with a threaded hole. The aperture of the communication hole is greater than the aperture of the threaded hole. The fastening apparatus includes a bolt and a connection structure. An end cap of the bolt is disposed in the first recess. A screw of the bolt passes through the connection structure and is threaded into the threaded hole. The connection structure is able to be clamped between the end cap and the carrying member.

Abstract: A method to fabricate micro-size III-nitride light emitting diodes (?LEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an InxAlyGazN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the ?LEDs have a low forward the GaN layers, which reduces a depletion width of the tunnel junction and increases the tunneling probability. The ?LEDs are fabricated with dimensions that vary from 25 to 10,000 ?m2. It was found that the InxAlyGazN insertion layer can reduce the forward voltage at 20 A/cm2 by at least 0.6 V. The tunnel junction ?LEDs with an n-type and p-type InxAlyGazN insertion layer had a low forward voltage at 20 A/cm2 that was very stable. At dimensions smaller than 1600 ?m2, the low forward voltage is less than 3.2 V.

Abstract: A bearing lubrication structure for a wind power gearbox includes a housing, a bearing, a planet carrier, and an oil scraper assembly. The planet carrier is rotatably disposed on the housing through the bearing. A first end face of the planet carrier and a second end face of the housing form a receiving chamber. The oil scraper assembly is disposed on the second end face and is located in the receiving chamber. The oil scraper assembly includes an oil scraper member. The oil scraper member is configured to, when the planet carrier rotates, collect oil from the first end face and make the oil flow into the bearing.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.