Abstract: A speaker includes a frame with a leakage hole, a magnetic circuit system and a vibration system received in the frame and a mesh covering the leakage hole. The vibration system comprises a diaphragm and a coil. The magnetic circuit system comprises a lower clamp and a magnet assembly stacked on the lower clamp. The mesh is integrally injection-molded with the frame, and comprises a central portion opposite to the leakage hole and a fixed portion located around the central portion and fixed with the frame. The fixed portion comprises an embedded portion embedded in the frame. The frame comprises a cover portion covering the embedded portion. The cover portion is provided with a recessed portion recessed from the surface of the cover portion away from the embedded portion toward the embedded portion until in contact with the embedded portion.

Abstract: The present disclosure discloses a method for synthesizing high-quality magnetic resonance images, wherein the method expands the value ranges of echo time TE and repetition time TR in a magnetic resonance signal formula to negative intervals, and expands the contribution of proton density PD to a negative power. The method can effectively reduce the influence of the measurement error of quantitative magnetic resonance imaging tissue parameters on the tissue contrast of the synthetic magnetic resonance image, and can obviously improve the tissue contrast of the synthetic magnetic resonance image. This method will significantly improve the imaging quality of synthetic magnetic resonance imaging, and promote its detection effect in neuroscience and clinical lesions. This method is expected to improve the imaging quality of synthetic magnetic resonance imaging and promote its detection effect in neuroscience and clinical lesions.

Abstract: A method to fabricate micro-size III-nitride light emitting diodes (?LEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an InxAlyGazN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the ?LEDs have a low forward the GaN layers, which reduces a depletion width of the tunnel junction and increases the tunneling probability. The ?LEDs are fabricated with dimensions that vary from 25 to 10,000 ?m2. It was found that the InxAlyGazN insertion layer can reduce the forward voltage at 20 A/cm2 by at least 0.6 V. The tunnel junction ?LEDs with an n-type and p-type InxAlyGazN insertion layer had a low forward voltage at 20 A/cm2 that was very stable. At dimensions smaller than 1600 ?m2, the low forward voltage is less than 3.2 V.

Abstract: A bearing lubrication structure for a wind power gearbox includes a housing, a bearing, a planet carrier, and an oil scraper assembly. The planet carrier is rotatably disposed on the housing through the bearing. A first end face of the planet carrier and a second end face of the housing form a receiving chamber. The oil scraper assembly is disposed on the second end face and is located in the receiving chamber. The oil scraper assembly includes an oil scraper member. The oil scraper member is configured to, when the planet carrier rotates, collect oil from the first end face and make the oil flow into the bearing.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A bearing lubrication structure for a wind power gearbox includes a housing, a bearing, a planet carrier, and an oil scraper assembly. The planet carrier is rotatably disposed on the housing through the bearing. A first end face of the planet carrier and a second end face of the housing form a receiving chamber. The oil scraper assembly is disposed on the second end face and is located in the receiving chamber. The oil scraper assembly includes an oil scraper member. The oil scraper member is configured to, when the planet carrier rotates, collect oil from the first end face and make the oil flow into the bearing.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A molecular marker combination linked to quantitative traits of tea plant (+)-catechin content, including a SNP site 1, a SNP site 2, a SNP site 3, a SNP site 4, a SNP site 5, a SNP site 6, a SNP site 7 and a SNP site 8, which are located in tea genomes Scaffold4239:309117, Scaffold3614: 66549, Scaffold349: 3413816, Scaffold1989: 2316385, Scaffold451: 940283, Scaffold3727:442660, Scaffold115:803980 and Scaffold920:281727, respectively, and genotypes thereof are extremely significantly correlated with the (+)-catechin content is provided. A detection method for detecting each site, and one or more molecular marker site is used to evaluate the tea plant (+)-catechin content.

Abstract: A molecular marker combination linked to quantitative traits of tea plant caffeine content, including a SNP site 1, a SNP site 2, a SNP site 3, a SNP site 4, a SNP site 5 and a SNP site 6, which are located in tea genomes Scaffold4239:309117, Scaffold115:803980, Scaffold720:596655, Scaffold3614:66549, Scaffold349:3413816 and Scaffold920:281727, respectively, and genotypes thereof are extremely significantly correlated with the caffeine content is provided. A detection method for detecting each site, and one or more molecular marker site is used to evaluate the tea plant caffeine content.

Abstract: A group of anti-BCM single domain antibodies, as well as genes of the single domain antibodies in the group, a vector containing the single domain antibodies in the group, a chimeric antigen receptor, and a T cell modified by a chimeric antigen receptor, and detection and treatment application of the single domain antibodies in the group. The anti-BCMA single domain antibodies have high activity, high stability, high specificity, and high binding capability.

Abstract: A chimeric antigen receptor (CAR) may be include: a BCMA binding domain, a transmembrane domain, a co-stimulatory domain, and an intracellular signaling domain, wherein the BCMA binding domain includes heavy chain complementarity determining regions HCDR1-3, and the amino acid sequences of the HCDR1-3 are successively as shown in SEQ ID NO: 1-3.

Abstract: A method of fabricating a semiconductor device, comprising: forming a growth restrict mask on or above a III-nitride substrate, and growing one or more island-like III-nitride semiconductor layers on the III-nitride substrate using the growth restrict mask The III-nitride substrate has an in-plane distribution of off-angle orientations with more than 0.1 degree; and the off-angle orientations of an m-plane oriented crystalline surface plane range from about +28 degrees to about ?47 degrees towards a c-plane. The island-like III-nitride semiconductor layers have at least one long side and short side, wherein the long side is perpendicular to an a-axis of the island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers do not coalesce with neighboring island-like III-nitride semiconductor layers.

Abstract: A mail piece processing apparatus and related method. A mail piece processing apparatus includes a base, a table connected to the base by a vertical member, a camera mounted above the table and positioned to take an image of a mail piece on the table, and a data processing system. The data processing system is configured to receive the image of the mail piece from the camera; determine address information and address information of the mail piece according to the image; determine a disposition result for the mail piece according to the image; and cause a label to be printed for the mail piece according to the disposition result.

Abstract: A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth (57) restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A method for processing change-of-address (COA) forms. The method includes capturing a first image of a first COA form. The method includes assigning a unique identifier to the first COA form and associating the unique identifier with the first image data. The method includes transmitting the first image data and the unique identifier to a cloud computing system. The cloud computing system performs an optical-character-recognition process on the first image data to produce name and address data including both an old address and a new address, validates the name and address data, and stores the name and address data in a change of address database.

Abstract: A mail piece processing apparatus and related method. A mail piece processing apparatus includes a base, a table connected to the base by a vertical member, a camera mounted above the table and positioned to take an image of a mail piece on the table, and a data processing system. The data processing system is configured to receive the image of the mail piece from the camera; determine address information and address information of the mail piece according to the image; determine a disposition result for the mail piece according to the image; and cause a label to be printed for the mail piece according to the disposition result.

Abstract: A method for processing return-to-sender (RTS) mail pieces by a mail processing system. The method includes receiving a plurality of RTS cards and RTS mail pieces. The RTS cards identify RTS reason codes for corresponding ones of the RTS mail pieces. The method includes imaging each RTS mail piece to produce an image. The method includes creating and storing a unique RTS mail piece profile of for each “error” RTS mail piece that uses an identification code for that RTS mail piece and a reason code from a preceding RTS card. The method includes sorting the RTS cards to a first output bin and sorting the error RTS mail pieces to a second output bin. The method includes thereafter processing the error RTS mail pieces using the corresponding RTS mail piece profiles and without using the RTS cards.