Patents by Inventor Hongjun Feng

Hongjun Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Acoustic resonator performance enhancement using selective metal etch
    Patent number: 8188810
    Abstract: An acoustic resonator comprises: a substrate; a first electrode adjacent the substrate; a layer of piezoelectric material adjacent the first electrode; a second electrode adjacent the layer of piezoelectric material; and a passivation layer adjacent the layer of piezoelectric material. The passivation layer includes a recessed feature. Fill material is provided in the recessed feature of the passivation layer.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: May 29, 2012
    Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Ronald S. Fazzio, Hongjun Feng
  • ACOUSTIC RESONATOR PERFORMANCE ENHANCEMENT USING SELECTIVE METAL ETCH
    Publication number: 20100277257
    Abstract: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.
    Type: Application
    Filed: July 19, 2010
    Publication date: November 4, 2010
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Hongjun Feng, Ronald S. Fazzio
  • Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
    Patent number: 7791434
    Abstract: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: September 7, 2010
    Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Ronald S. Fazzio, Hongjun Feng
  • Acoustic resonator performance enhancement using alternating frame structure
    Patent number: 7714684
    Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.
    Type: Grant
    Filed: May 6, 2008
    Date of Patent: May 11, 2010
    Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Richard C. Ruby, Ronald S. Fazzio, Hongjun Feng, Paul D. Bradley
  • Film bulk acoustic resonator (FBAR) devices with temperature compensation
    Patent number: 7561009
    Abstract: The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: July 14, 2009
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: John D. Larson, III, John Choy, Donald E. Lee, Kevin J. Grannen, Hongjun Feng, Carrie A. Rogers, Urupattur C. Sridharan
  • ACOUSTIC RESONATOR PERFORMANCE ENHANCEMENT USING ALTERNATING FRAME STRUCTURE
    Publication number: 20080258842
    Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.
    Type: Application
    Filed: May 6, 2008
    Publication date: October 23, 2008
    Inventors: Richard C. Ruby, Ronald S. Fazzio, Hongjun Feng, Paul D. Bradley
  • Acoustic resonator performance enhancement using alternating frame structure
    Patent number: 7388454
    Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.
    Type: Grant
    Filed: June 23, 2005
    Date of Patent: June 17, 2008
    Assignee: Avago Technologies Wireless IP Pte Ltd
    Inventors: Richard C. Ruby, Ronald S. Fazzio, Hongjun Feng, Paul D. Bradley
  • Thin film bulk acoustic resonator with a mass loaded perimeter
    Patent number: 7280007
    Abstract: A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).
    Type: Grant
    Filed: November 15, 2004
    Date of Patent: October 9, 2007
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Hongjun Feng, R. Shane Fazzio, Richard Ruby, Paul Bradley
  • Film bulk acoustic resonator (FBAR) devices with temperature compensation
    Publication number: 20070120625
    Abstract: The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.
    Type: Application
    Filed: November 30, 2005
    Publication date: May 31, 2007
    Inventors: John Larson, John Choy, Donald Lee, Kevin Grannen, Hongjun Feng, Carrie Rogers, U.C. Sridharan
  • Acoustically coupled thin-film resonators having an electrode with a tapered edge
    Patent number: 7098758
    Abstract: Acoustically coupled resonators include a first and a second acoustic resonator. Both the first and second acoustic resonators include a first electrode, a layer of piezoelectric material, and a second electrode. The first electrode is adjacent a first surface of the layer of piezoelectric material. The second electrode is adjacent a second surface of the layer of piezoelectric material. At least the second electrode has an edge that is tapered.
    Type: Grant
    Filed: November 3, 2004
    Date of Patent: August 29, 2006
    Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Kun Wang, Paul D. Bradley, Richard C. Ruby, Hongjun Feng
  • Acoustic resonator performance enhancement using selective metal etch
    Publication number: 20060132262
    Abstract: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.
    Type: Application
    Filed: December 22, 2004
    Publication date: June 22, 2006
    Inventors: Ronald Fazzio, Hongjun Feng
  • Thin film bulk acoustic resonator with a mass loaded perimeter
    Publication number: 20060103492
    Abstract: A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).
    Type: Application
    Filed: November 15, 2004
    Publication date: May 18, 2006
    Inventors: Hongjun Feng, R. Fazzio, Richard Ruby, Paul Bradley
  • Acoustically coupled thin-film resonators
    Publication number: 20060091978
    Abstract: Acoustically coupled resonators include a first and a second acoustic resonator. Both the first and second acoustic resonators include a first electrode, a layer of piezoelectric material, and a second electrode. The first electrode is adjacent a first surface of the layer of piezoelectric material. The second electrode is adjacent a second surface of the layer of piezoelectric material. At least the second electrode has an edge that is tapered.
    Type: Application
    Filed: November 3, 2004
    Publication date: May 4, 2006
    Inventors: Kun Wang, Paul Bradley, Richard Ruby, Hongjun Feng
  • Acoustic resonator performance enhancement using alternating frame structure
    Publication number: 20060071736
    Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.
    Type: Application
    Filed: June 23, 2005
    Publication date: April 6, 2006
    Inventors: Richard Ruby, Ronald Fazzio, Hongjun Feng, Paul Bradley