Abstract: The present invention relates to solid solution inducing layer for the preparation of weak epitaxial films of non-planar phthalocyanine and the thin film of non-planar phthalocyanine generated from the weak epitaxial growth on the solid solution inducing layer and organic thin film transistor based on the weak rpitaxy growth thin film of non-planar phthalocyanine. The solid solution inducing layer is prepared at certain substrate temperature by vapor co-deposition of any two inducing layer molecules presented by Formula I and Formula II. The solid solution inducing layer has uniformed structure, of which the lattice parameter and electronic structure can be controlled by adjusting the component proportion, the solid solution inducing layer can epitaxially grow a high quality thin film of non-planar phthalocyanine and fabricate high performance transistor device based on such epitaxial thin film.

Abstract: The present invention relates to solid solution inducing layer for the preparation of weak epitaxial films of non-planar phthalocyanine and the thin film of non-planar phthalocyanine generated from the weak epitaxial growth on the solid solution inducing layer and organic thin film transistor based on the weak rpitaxy growth thin film of non-planar phthalocyanine. The solid solution inducing layer is prepared at certain substrate temperature by vapor co-deposition of any two inducing layer molecules presented by Formula I and Formula II. The solid solution inducing layer has uniformed structure, of which the lattice parameter and electronic structure can be controlled by adjusting the component proportion, the solid solution inducing layer can epitaxially grow a high quality thin film of non-planar phthalocyanine and fabricate high performance transistor device based on such epitaxial thin film.

Abstract: The present invention relates to inducing layer materials for the preparation of weak epitaxial films of non-planar metal phthalocyanine. The characteristics of the inducing layer materials lies in that the said inducing layer materials replace benzene rings of sexiphenyl by conjugated aromatic group and to replace the hydrogen atoms of benzene rings at the two ends of sexiphenyl by fluorine atoms, thus the regulation of molecular interaction is finally realized by changing the size or the linearity degree of the conjugated aromatic groups, as well as by changing the polarity of the benzene ring at the two ends, consequently, the cell parameters of (001) crystal face of the new materials are different from that of sexiphenyl and to achieve a effect of inducing the weak epitaxy growth of non-planar metal-phthalocyanine.