Abstract: A travel destination retrieval system using a coloration-based spatial information database includes a data collection unit configured to collect image data from a user terminal, a coloration extraction unit configured to analyze the collected image data to extract representative coloration information, an ID generation unit configured to generate representative ID information related to the representative coloration information, a travel destination information generation unit configured to generate travel destination information corresponding to the representative coloration information and the representative ID information, a data fusion unit configured to generate coloration space information by mapping the representative coloration information, the representative ID information, and the travel destination information to the image data, a data storage unit configured to store the generated coloration space information, and a travel destination information output unit configured to output recommended trave

Abstract: A preparation method of silver nanostructure for use as substrate of surface-enhanced Raman scattering (SERS), which can ensure the ‘hot spot’, which provides the considerably very intense electromagnetic field in which the silver nano-structures have uniform average size and very strong forms of particles, by characterizing a variety of conditions such as, for example, concentration of AgNO3 and reductant, reaction temperature, stirring velocity, single dropwise addition quantity, dropwise addition rate, or total dropwise addition quantity, which were unpredictable in the conventional silver nanoparticle preparation method using AgNO3 aqueous solution and NaBH4 reductant, so that the preparation method can be advantageously applied for the mass production of silver nano-structures for use as substrate of SERS because the method can provide multimer form with enhanced SERS signals and reproducibility, and also ability to selectively control the particle size.

Abstract: A preparation method of silver nanostructure for use as substrate of surface-enhanced Raman scattering (SERS), which can ensure the ‘hot spot’, which provides the considerably very intense electromagnetic field in which the silver nano-structures have uniform average size and very strong forms of particles, by characterizing a variety of conditions such as, for example, concentration of AgNO3 and reductant, reaction temperature, stirring velocity, single dropwise addition quantity, dropwise addition rate, or total dropwise addition quantity, which were unpredictable in the conventional silver nanoparticle preparation method using AgNO3 aqueous solution and NaBH4 reductant, so that the preparation method can be advantageously applied for the mass production of silver nano-structures for use as substrate of SERS because the method can provide multimer form with enhanced SERS signals and reproducibility, and also ability to selectively control the particle size.

Abstract: Photomasks are disclosed. A disclosed example photomask comprises: a first pattern located along an axis of the photomask; at least one second pattern located a distance from and a predetermined angle to the first pattern; and slits made of Cr on at least one end of each of the first and second patterns, wherein the photomask is a Cr-less mask.

Abstract: An image sensor and method of manufacturing the same are provided. The image sensor can include a photodiode on a substrate, an interlayer insulation layer on the photodiode, and a color filter layer on the interlayer insulation layer. The color filter layer can include a nonsensitive color resin.

Abstract: A method of forming an isolated line on a wafer is disclosed. The disclosed method comprises preparing a first mask comprising an isolated line pattern and dummy patterns, the dummy patterns being positioned on either side of the isolated line pattern; forming an isolated line pattern and dummy patterns on a wafer by performing a first exposure process using the first mask; preparing a second mask comprising a second pattern, the second pattern being positioned so as to completely cover the isolated line pattern on the wafer; and removing the dummy patterns on the wafer by performing a second exposure process using the second mask.

Abstract: A method for photomask processing including the formation of a photoresist pattern for a P-Well. The method further includes implanting ions for the P-well using the photoresist pattern as an ion implantation mask, coating another photoresist for the N-well that has a higher etch resistance than that of the photoresist for the P-well, removing the photoresist for the P-well, implanting ions for the N-well, and removing the photoresist. The method reduces the number of photomask processes for ion implantation, so the total processing cost can be reduced.