Abstract: A packaging material 1 includes a heat resistant resin stretched film layer 2 as an outer layer, a thermoplastic resin layer 3 as an inner layer, a metal foil layer 4 arranged between these layers, and a colored ink layer 10 arranged between the metal foil layer 4 and the heat resistant resin stretched film layer 2. As the heat resistant resin stretched film, a heat resistant resin stretched film having a hot water shrinkage rate of 2% to 20% is used, and the heat resistant resin stretched film layer 2 and the colored ink layer 4 are integrally laminated via an easily adhesive layer 30. In this packaging material, at the time of forming and sealing, and even being used in a somewhat severe environment such as high-temperature and humid environment, the colored ink layer will not be detached from the heat resistant resin stretched film layer.

Abstract: A heat-resistant NDV live vaccine vector system includes a transcription plasmid, three helper plasmids, and host cells. The transcription plasmid is constructed by through cloning complete genomic cDNA of a heat-resistant NDV vaccine strain to a pBR322 vector. The three helper plasmids are constructed by cloning sequences coding nucleoprotein (NP), phosphoprotein, large polymerase protein of a heat-resistant NDV vaccine strain respectively to pcDNA3.1 vectors. A recombinant NDV artificially obtained by cotransfacting host cells with the transcription plasmid and the three helper plasmids shows heat-resistance.

Abstract: A semiconductor light emitting element (1) provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode, and an n-side electrode (400) formed on the n-type semiconductor layer. The p-side electrode has a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode, and the n-side electrode has an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer. The p-side joining layer and the n-side joining layer are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode and the n-side bonding pad electrode are configured of a laminated structure composed of Pt and Au.

Abstract: A semiconductor light emitting element (1) includes; an n-type semiconductor layer (120), a light emitting layer (130), a p-type semiconductor layer (140), a p-side power supply portion (150), and an n-side power supply portion (160) that includes an n-side power supply electrode (162), an n-side auxiliary electrode (163) and n-side connective electrodes (164). The n-side power supply electrode (162) and auxiliary electrode (163) are provided in the inner side beyond the p-type semiconductor layer (140) viewed from the light emitting layer (130). On the p-type semiconductor layer (140), a power supply insulating layer (170) transparent to light from the light emitting layer (130) is provided, and portions at lower side of the n-side power supply electrode (162) and auxiliary electrode (163) are set to have a thickness with which the light is easily reflected, and other portions are set to have a thickness with which the light is easily transmitted.

Abstract: A semiconductor light emitting element includes a laminated semiconductor layer including a light emitting layer that emits light by passing a current, the laminated semiconductor layer has a lower semiconductor bottom surface, a semiconductor side surface that rises from an edge of the lower semiconductor bottom surface upwardly and outwardly of the laminated semiconductor layer, and a lower semiconductor top surface that faces upward by extending inwardly of the laminated semiconductor layer from an upper edge of the semiconductor side surface, an edge of the lower semiconductor top surface includes first and second linear portions extending linearly and plural connecting portions connecting the first and second linear portions, and, when viewed from a direction perpendicular to the lower semiconductor top surface, each connecting portion is positioned inside a point of intersection of extended lines of the first and second linear portions connected to the connecting portion.

Abstract: Disclosed is a semiconductor light emitting element (1) which is provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode (170), and an n-side electrode (400) formed on the n-type semiconductor layer (140). The p-side electrode (300) is provided with a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode (170), and the n-side electrode (400) is provided with an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer (140). The p-side joining layer (310) and the n-side joining layer (410) are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode (320) and the n-side bonding pad electrode (420) are configured of a laminated structure composed of Pt and Au.