Patents by Inventor Hongmei Wang

Hongmei Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabrication
    Publication number: 20030227056
    Abstract: A fully-depleted (FD) Silicon-on-Insulator (SOI) MOSFET access transistor comprising a gate electrode of a conductivity type which is opposite the conductivity type of the source/drain regions and a method of fabrication are disclosed.
    Type: Application
    Filed: June 5, 2002
    Publication date: December 11, 2003
    Inventors: Hongmei Wang, John K. Zahurak