Abstract: Provided are a method for preparing an organic electroluminescent device, an organic electroluminescent device and a display apparatus.

Abstract: Disclosed are to a pixel circuit, a method for driving the pixel circuit and a display panel. The pixel circuit includes a data write module, a storage module, a drive module and a light emitting device. The drive module includes a first control terminal and a second control terminal. The data write module is configured to write, at a data write stage, a data signal into the first control terminal of the drive module, the storage module is configured to maintain a potential of the first control terminal, the second control terminal is electrically connected to a pulse-width modulation (PWM) signal input terminal of the pixel circuit, and is configured to control the drive module to provide discontinuous drive current according to a PWM signal from the PWM signal input terminal at a light emission stage, and the light emitting device emits light in response to the discontinuous drive current.

Abstract: Disclosed are to a pixel circuit, a method for driving the pixel circuit and a display panel. The pixel circuit includes a data write module, a storage module, a drive module and a light emitting device. The drive module includes a first control terminal and a second control terminal. The data write module is configured to write, at a data write stage, a data signal into the first control terminal of the drive module, the storage module is configured to maintain a potential of the first control terminal, the second control terminal is electrically connected to a pulse-width modulation (PWM) signal input terminal of the pixel circuit, and is configured to control the drive module to provide discontinuous drive current according to a PWM signal from the PWM signal input terminal at a light emission stage, and the light emitting device emits light in response to the discontinuous drive current.

Abstract: Provided are a display panel and a display device. The display panel includes at least two display units. Each display unit includes a substrate, a flexible substrate, a light-emitting unit circuit layer and at least one driver chip. The rigid substrate includes a display bearing region and a splicing region located on at least one side of the display bearing region. The flexible substrate is located on a first surface of the rigid substrate and located in the display bearing region, and the flexible substrate at least partially extends out of the display bearing region of the rigid substrate. The light-emitting unit circuit layer is located on a surface of one side of the flexible substrate away from the rigid substrate and includes at least one bonding pad.

Abstract: Provided are a method for preparing an organic electroluminescent device, an organic electroluminescent device and a display apparatus.

Abstract: A Metal Oxide Thin Film Transistor (MOTFT) and a preparation method thereof are provided. The preparation method includes the following steps in turn: Step a: a metal conductive layer is prepared and patterned as a gate on a substrate; Step b: a first insulating thin film is deposited as a gate insulating layer on the metal conductive layer; Step c: a metal oxide thin film is deposited and patterned as an active layer on the gate insulating layer; Step d: an organic conductive thin film is deposited as a back channel etch protective layer on the active layer; Step e: a metal layer is deposited on the back channel etch protective layer and then patterned as pattern of a source electrode and a drain electrode; Step f: a second insulating thin film is deposited as a passivation layer on the source electrode and the drain electrode.

Abstract: A Metal Oxide Thin Film Transistor (MOTFT) and a preparation method thereof are provided. The preparation method includes the following steps in turn: Step a: a metal conductive layer is prepared and patterned as a gate on a substrate; Step b: a first insulating thin film is deposited as a gate insulating layer on the metal conductive layer; Step c: a metal oxide thin film is deposited and patterned as an active layer on the gate insulating layer; Step d: an organic conductive thin film is deposited as a back channel etch protective layer on the active layer; Step e: a metal layer is deposited on the back channel etch protective layer and then patterned as pattern of a source electrode and a drain electrode; Step f: a second insulating thin film is deposited as a passivation layer on the source electrode and the drain electrode.