Abstract: Provided are a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes a substrate in which a capacitor structure is formed, and the capacitor structure includes a lower electrode plate, a dielectric layer, an upper electrode plate and a protective layer. The lower electrode plate is located on the substrate. The dielectric layer covers a surface of the lower electrode plate. The upper electrode plate covers the dielectric layer. The protective layer is formed on a surface of the upper electrode plate parallel to the substrate.

Abstract: Provided are a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes a substrate in which a capacitor structure is formed, and the capacitor structure includes a lower electrode plate, a dielectric layer, an upper electrode plate and a protective layer. The lower electrode plate is located on the substrate. The dielectric layer covers a surface of the lower electrode plate. The upper electrode plate covers the dielectric layer. The protective layer is formed on a surface of the upper electrode plate parallel to the substrate.

Abstract: The present disclosure discloses a multi-degree-of-freedom driving arm and a dual-arm robot using the arm, the multi-degree-of-freedom driving arm comprises a single-degree-of-freedom driving module and a plurality of dual-degree-of-freedom driving modules, and the single-degree-of-freedom driving module and the dual-degree-of-freedom driving module located at the innermost side are coupled to each other; the dual-degree-of-freedom driving module has two orthogonal rotational degrees of freedom, and comprises a first driving mechanism that is configured to drive the dual-degree-of-freedom driving module to rotate in the first rotational degree of freedom, and a second driving mechanism that is configured to drive the dual-degree-of-freedom driving module to rotate in the second rotational degree of freedom; the first driving mechanism of the dual-degree-of-freedom driving module located on outer side is disposed on the second driving mechanism of the dual-degree-of-freedom driving module adjacent thereto and

Abstract: This disclosure relates to the technical field of semiconductor manufacturing, and discloses a semiconductor structure and a method for forming the same. The method includes: providing a semiconductor substrate having a plurality of contact structures arranged at an interval on a surface thereof, and the contact structures protruding from the substrate; forming a first dielectric layer on a side wall of the contact structure; depositing a second dielectric layer on surfaces of the semiconductor substrate, the contact structure and the first dielectric layer; enabling the first dielectric layer to react with the second dielectric layer; and removing an unreacted portion of the second dielectric layer by etching.

Abstract: The present disclosure discloses a multi-degree-of-freedom driving arm and a dual-arm robot using the arm, the multi-degree-of-freedom driving arm comprises a single-degree-of-freedom driving module and a plurality of dual-degree-of-freedom driving modules, and the single-degree-of-freedom driving module and the dual-degree-of-freedom driving module located at the innermost side are coupled to each other; the dual-degree-of-freedom driving module has two orthogonal rotational degrees of freedom, and comprises a first driving mechanism that is configured to drive the dual-degree-of-freedom driving module to rotate in the first rotational degree of freedom, and a second driving mechanism that is configured to drive the dual-degree-of-freedom driving module to rotate in the second rotational degree of freedom; the first driving mechanism of the dual-degree-of-freedom driving module located on outer side is disposed on the second driving mechanism of the dual-degree-of-freedom driving module adjacent thereto and