Abstract: A system and method for authentication code generation based on adversarial machine learning are provided in this disclosure. The method includes a defensive authentication code generation system, an authentication code formation module, an authentication code scheduling module, an authentication-code adversarial processing center, an attack sample generation module, a verification and error reporting system, a division module, a grouping and distribution system, a category checking module, a data recording unit, a detection module and an integration terminal. In the system and method for authentication code generation based on adversarial machine learning according to the disclosure, attack scenes are simulated for continuous training for the authentication code, error-reporting data are recorded and optimized into the defensive authentication code generation system, so as to improve defense performance of the authentication code.

Abstract: A system of scanning electron microscope sample box and a method of opening the same are provided, including: a sample chamber (1); an exchange chamber (2) communicated with the sample chamber (1), a sample stage base (3) is disposed in the exchange chamber (2), the sample stage base (3) is subjected to an external force to be translated from the exchange chamber (2) to the sample chamber (1), and an inner wall of the exchange chamber (2) is provided with a pulling arm (4); and a sample box including a box body (5) and a box cover (6) sealing the box body (5), wherein the box body (5) is placed on the sample stage base (3) of the exchange chamber (2), and the box cover (6) is connected to the pulling arm (4), so that the box body (5) is separated from the box cover (6) when the sample stage base (3) is subjected to the external force to translate the box body (5) from the exchange chamber (2) to the sample chamber (1).

Abstract: An LED epitaxial structure includes a substrate; a GaN nucleating layer; a superlattice buffer layer comprising a plurality pairs of alternately stacked AlGaN/n-GaN structures; an n-GaN layer; a MQW light-emitting layer, a p-GaN layer and a p-type contact layer. Al(n) represents Al composition value of the nth AlGaN/n-GaN superlattice buffer layer pair; N(n) represents n-type impurity concentration value of the nth AlGaN/n-GaN superlattice buffer layer pair; variation trend of Al(n) is from gradual increase to gradual decrease, and for N(n) is from gradual increase to gradual decrease.

Abstract: An LED epitaxial structure includes a substrate; a GaN nucleating layer; a superlattice buffer layer comprising a plurality pairs of alternately stacked AlGaN/n-GaN structures; an n-GaN layer; a MQW light-emitting layer, a p-GaN layer and a p-type contact layer. Al(n) represents Al composition value of the nth AlGaN/n-GaN superlattice buffer layer pair; N(n) represents n-type impurity concentration value of the nth AlGaN/n-GaN superlattice buffer layer pair; variation trend of Al(n) is from gradual increase to gradual decrease, and for N(n) is from gradual increase to gradual decrease.