Patents by Inventor Hongming Shen

Hongming Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240079512
    Abstract: An avalanche photodiode (APD) includes a first electrode, a substrate layer, a buffer layer, a gain layer, a gradient layer, an absorption layer, a diffusion barrier layer, a contact layer, and a second electrode. The gain layer, the gradient layer, and the absorption layer are arranged vertically in sequence. The gain layer, the gradient layer, and the absorption layer are located between the buffer layer and the diffusion barrier layer. The gain layer includes at least two gain units, and the gain units are arranged in a stacked manner. Each of the gain units includes a multiplication layer and a charge layer that are arranged vertically. A distance between the charge layer and the gradient layer is less than a distance between the multiplication layer and the gradient layer.
    Type: Application
    Filed: November 10, 2023
    Publication date: March 7, 2024
    Inventors: Hongming Shen, Yanli Zhao, Yun Ding, Dapan Li
  • Patent number: D1056525
    Type: Grant
    Filed: December 7, 2023
    Date of Patent: January 7, 2025
    Assignee: Shenzhen Unlimit Technology Co., Ltd.
    Inventor: Hongming Shen