Abstract: The present invention relates to a 2,3-dihydro-1H-pyrrolo[3,2-b]pyridine derivative, a preparation method therefor, and an application thereof, and in particular to an EGFR inhibitor having the structure of formula (I), a preparation method therefor, a pharmaceutical composition containing same, a use of same as an EGFR inhibitor, and a use of same in the treatment and/or prevention of cancers, tumors, or metastatic diseases at least partially related to EGFR exon 20 insertion or deletion mutations, especially a use in the treatment of hyperproliferative diseases and dysfunction in cell death induction. The definition of each substituent in formula (I) is the same as that in the description.

Abstract: Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation.

Abstract: Disclosed herein are photonic materials. The photonic materials comprise a first layer, a second layer, and a third layer, wherein the second layer is disposed between and in contact with the first layer and the third layer, such that the second layer is sandwiched between the first layer and the third layer. In some examples, the first layer comprises InyGa1-yN, wherein y is from 0 to 0.8. In some examples, the second layer comprises (ZnaSnbGec)xGadN2, wherein: x is from greater than 0 to 1; a, b, c, and d are each independently from 0 to 1; with the proviso that at least one of a, b, or c is greater than 0. In some examples, the third layer comprises InzGa1-zN, wherein z is from 0 to 0.8.

Abstract: Disclosed herein methods of forming an Al—Ga containing film comprising: a) exposing a substrate comprising a ?-Ga2O3, wherein the substrate has a (100) or (?201) orientation, to a vapor phase comprising an aluminum precursor and a gallium precursor; and b) forming a ?-(AlxGa1-x)2O3 thin film by a chemical vapor deposition at predetermined conditions and wherein x is 0.01?x?0.7. Also disclosed herein are devices comprising the inventive films.

Abstract: A system can be used to record real-time pressure and/or shear force data within a socket for a prosthetic device. The system includes a socket for a prosthetic device that can be designed to fit a patient's residual limb. The system also includes a sensor array that can be placed within the socket for the prosthetic device to detect pressure and/or shear force on the patient's residual limb. The sensor array includes a piezo-electric material and a uniform distribution of a plurality of metal pads on either side of the piezo-electric material. Each of the plurality of metal pads on either side of the piezo-electric material comprises at least one wire connected to a common port.

Abstract: Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.

Abstract: Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation.

Abstract: Disclosed herein are photonic materials. The photonic materials can comprise: a first layer comprising InxGa1-xN, wherein x is from 0 to 0.5; a second layer comprising ZnSnN2; and a third layer comprising InyGa1-yN, wherein y is from 0 to 0.5; wherein the second layer is disposed between and in contact with the first layer and the third layer, such that the second layer is sandwiched between the first layer and the third layer. In some examples, the photonic materials can be sandwiched between two or more barrier layers to form a quantum well.

Abstract: Disclosed herein methods of forming an Al—Ga containing film comprising: a) exposing a substrate comprising a ?-Ga2O3, wherein the substrate has a (100) or (?201) orientation, to a vapor phase comprising an aluminum precursor and a gallium precursor; and b) forming a ?-(AlxGa1-x)2O3 thin film by a chemical vapor deposition at predetermined conditions and wherein x is 0.01?x?0.7. Also disclosed herein are devices comprising the inventive films.

Abstract: Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.

Abstract: A method of assisting tilt angle adjustment of a thermal camera comprises arranging the thermal camera at an initial tilt angle, acquiring at least one thermal image by the thermal camera, determining, from the at least one thermal image, a series of sharpness indicators of image parts corresponding to vertically spaced parts of the camera view, identifying a maximum in the series of sharpness indicators, based on the identified maximum, determining a target sharpness indicator as a predetermined fraction of the identified maximum, during tilt angle adjustment, assisting by providing a target signal for indicating a target tilt angle of the thermal camera in which a sharpness indicator of a lower part of the camera's field of view equals the determined target sharpness indicator.

Abstract: Disclosed herein are photonic materials. The photonic materials can comprise: a first layer comprising InxGa1-xN, wherein x is from 0 to 0.5; a second layer comprising ZnSnN2; and a third layer comprising InyGa1-yN, wherein y is from 0 to 0.5; wherein the second layer is disposed between and in contact with the first layer and the third layer, such that the second layer is sandwiched between the first layer and the third layer. In some examples, the photonic materials can be sandwiched between two or more barrier layers to form a quantum well.

Abstract: A method of assisting tilt angle adjustment of a thermal camera comprises arranging the thermal camera at an initial tilt angle, acquiring at least one thermal image by the thermal camera, determining, from the at least one thermal image, a series of sharpness indicators of image parts corresponding to vertically spaced parts of the camera view, identifying a maximum in the series of sharpness indicators, based on the identified maximum, determining a target sharpness indicator as a predetermined fraction of the identified maximum, during tilt angle adjustment, assisting by providing a target signal for indicating a target tilt angle of the thermal camera in which a sharpness indicator of a lower part of the camera's field of view equals the determined target sharpness indicator.

Abstract: A method is disclosed for depositing a high-quality thin films of ultrawide bandgap oxide semiconductors at growth rates that are higher than possible using prior-art methods. Embodiments of the present invention employ LPCVD deposition using vapor formed by evaporating material as a precursor, where the material has a low vapor pressure at the growth temperature for the thin film. The vapor is carried to a reaction chamber by an inert gas, such as argon, where it mixes with a second precursor. The reaction chamber is held at a pressure that nucleation of the precursor materials occurs preferentially on the substrate surface rather than in vapor phase. The low vapor pressure of the material gives rise to growth rates on the substrate surface that a significantly faster than achievable using prior-art growth methods.

Abstract: A system can be used to record real-time pressure and/or shear force data within a socket for a prosthetic device. The system includes a socket for a prosthetic device that can be designed to fit a patient's residual limb. The system also includes a sensor array that can be placed within the socket for the prosthetic device to detect pressure and/or shear force on the patient's residual limb. The sensor array includes a piezo-electric material and a uniform distribution of a plurality of metal pads on either side of the piezo-electric material. Each of the plurality of metal pads on either side of the piezo-electric material comprises at least one wire connected to a common port.

Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

Abstract: A method is disclosed for depositing a high-quality thin films of ultrawide bandgap oxide semiconductors at growth rates that are higher than possible using prior-art methods. Embodiments of the present invention employ LPCVD deposition using vapor formed by evaporating material as a precursor, where the material has a low vapor pressure at the growth temperature for the thin film. The vapor is carried to a reaction chamber by an inert gas, such as argon, where it mixes with a second precursor. The reaction chamber is held at a pressure that nucleation of the precursor materials occurs preferentially on the substrate surface rather than in vapor phase. The low vapor pressure of the material gives rise to growth rates on the substrate surface that a significantly faster than achievable using prior-art growth methods.

Abstract: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn, wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing layers provide a step function In-content profile.

Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.

Abstract: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn, wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing layers provide a step function In-content profile.