Abstract: An integrated circuit structure includes a first vertical stack of horizontal nanowires or a first fin having a first lateral width. A first gate electrode is over the first vertical stack of horizontal nanowires or the first fin, the first gate electrode having a second lateral width. A second vertical stack of horizontal nanowires or a second fin is laterally spaced apart from the first vertical stack of horizontal nanowires or the second fin, the second vertical stack of horizontal nanowires or the second fin having a third lateral width, the third lateral width less than the first lateral width. A second gate electrode is over the second vertical stack of horizontal nanowires or the second fin, the second gate electrode laterally spaced apart from the first gate electrode, and the second gate electrode having a fourth lateral width, the fourth lateral width less than the second lateral width.

Abstract: Integrated circuit structures having backside source or drain contact differentiated access are described. In an example, an integrated circuit structure includes first, second and third pluralities of horizontally stacked nanowires or fins, and first, second and third gate stacks. A first epitaxial source or drain structure is between the first plurality of horizontally stacked nanowires or fin and the second plurality of horizontally stacked nanowires or fin, the first epitaxial source or drain structure over a first conductive material having a first depth below the first epitaxial source or drain structure. A second epitaxial source or drain structure is between the second plurality of horizontally stacked nanowires or fin and the third plurality of horizontally stacked nanowires or fin, the second epitaxial source or drain structure over a second conductive material having a second depth below the second epitaxial source or drain structure, the second depth greater than the first depth.

Abstract: Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a plug between two gates within a transistor layer of a semiconductor device. In embodiments, the plug includes a cap at a top of the plug and a liner surrounding at least a portion of the cap, and a base below the cap and the liner. The cap may include a metal. A top of the cap may be even with, or substantially even with, the top of the two gates. The plug may provide a more even surface at a top of a transistor layer where the plug fills in for a gate cut. Other embodiments may be described and/or claimed.

Abstract: Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a wall within a metal gate cut in a transistor layer of a semiconductor device, where the wall includes a volume of a gas such as air, nitrogen, or another inert gas. Other embodiments may be described and/or claimed.

Abstract: Disclosed are cooling apparatus and methods of cooling a template. The cooling apparatus includes a reticle and an optical cooling material. The reticle includes patterning for at least partially reflecting patterning radiation incident on a first side of the reticle. The optical cooling material is in thermally-conductive coupling with the reticle mount and is configured to produce cooling when exposed to a laser radiation. More particularly, the optical cooling material includes a glass material that exhibits anti-Stokes fluorescence that produces cooling of the glass material when exposed to an infrared laser beam. In some embodiments, the cooling apparatus may be incorporated with a reticle mount. The reticle mount is in thermally-conductive coupling with a second side of the reticle.

Abstract: Disclosed are cooling apparatus and methods of cooling a template. The cooling apparatus includes a reticle and an optical cooling material. The reticle includes patterning for at least partially reflecting patterning radiation incident on a first side of the reticle. The optical cooling material is in thermally-conductive coupling with the reticle mount and is configured to produce cooling when exposed to a laser radiation. More particularly, the optical cooling material includes a glass material that exhibits anti-Stokes fluorescence that produces cooling of the glass material when exposed to an infrared laser beam. In some embodiments, the cooling apparatus may be incorporated with a reticle mount. The reticle mount is in thermally-conductive coupling with a second side of the reticle.