Abstract: Disclosed is a plasma treatment apparatus, a lower electrode assembly and a forming method thereof, wherein the lower electrode assembly includes: a base for carrying a substrate to be treated; a focus ring encircling a periphery of the base; a coupling loop disposed below the focus ring; a conductive layer disposed in the coupling loop; and a wire for electrically connecting the conductive layer and the base so that the base and the conducting layer are equipotential. The lower electrode assembly is less prone to cause arc discharge.

Abstract: The present application relates to the technical field of directional drill rod assembly, and discloses methods for mounting and testing a central communication cable assembly of a directional drill rod, the mounting method including: according to drawing requirements, mounting an O-shaped sealing member in a sealing groove of an insulating male connector, an insulating female connector, a communication cable direct connector and a communication cable tapered connector, and processing, connecting, and mounting the various components. By means of the method, the central communication cable assembly of a directional drill rod is mounted, and the product quality stability is good.

Abstract: A method and an apparatus for direct writing photoetching by parallel interpenetrating super-resolution high-speed laser. The method of the present application uses a parallel interpenetrating algorithm. Firstly, a multi-beam solid light spot for writing is generated based on a writing light spatial light modulator; a multi-beam hollow light spot for inhibition is generated based on an inhibition optical spatial light modulator; the multi-beam solid light spot is combined with the multi-beam hollow light spot to generate a modulated multi-beam light spot; a writing waveform is output based on a multichannel acousto-optic modulator, a displacement stage moves at a constant speed until writing of a whole column of areas is completed, an optical switch is turned off, and the displacement stage conducts one-time stepping movement; the process is not stopped until all patterns are written.

Abstract: A method and an apparatus for direct writing photoetching by parallel interpenetrating super-resolution high-speed laser. The method of the present application uses a parallel interpenetrating algorithm. Firstly, a multi-beam solid light spot for writing is generated based on a writing light spatial light modulator; a multi-beam hollow light spot for inhibition is generated based on an inhibition optical spatial light modulator; the multi-beam solid light spot is combined with the multi-beam hollow light spot to generate a modulated multi-beam light spot; a writing waveform is output based on a multichannel acousto-optic modulator, a displacement stage moves at a constant speed until writing of a whole column of areas is completed, an optical switch is turned off, and the displacement stage conducts one-time stepping movement; the process is not stopped until all patterns are written.

Abstract: Disclosed is a plasma treatment apparatus, a lower electrode assembly and a forming method thereof, wherein the lower electrode assembly includes: a base for carrying a substrate to be treated; a focus ring encircling a periphery of the base; a coupling loop disposed below the focus ring; a conductive layer disposed in the coupling loop; and a wire for electrically connecting the conductive layer and the base so that the base and the conducting layer are equipotential. The lower electrode assembly is less prone to cause arc discharge.