Abstract: A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).

Abstract: A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).

Abstract: Provided is a method for manufacturing a metal structure in which an array of a plurality of pin arrangements is formed on a surface of a metal, in which the method includes: performing a laser processing along a route between pin regions in which the pins are to be formed on a metal base material to form a dross on the pin regions, and repeating the laser processing. As the dross formed in each pin region is repeatedly cast and recast during the repetitive laser processing, the recast layer is formed in a shape of the pin.