Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

Abstract: A semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.

Abstract: A condensate trap assembly. The assembly comprises a housing having first and second condensate inlets where the first condensate inlet is sized to pass more condensate than the second condensate inlet. The housing has an ambient air inlet providing access to an ambient air chamber within the housing, a first condensate chamber open to the first condensate inlet, and a second condensate chamber open to the second condensate inlet. The first condensate chamber, the second condensate chamber, and the ambient air chamber are open to each other and the first condensate chamber includes airflow restrictors to retard the volume of airflow through the first chamber.

Abstract: A compact secondary heat exchanger, installed in the path of room air through the casing of a gas furnace, utilizes a unitary condensing coil having parallel upper, middle and lower sets of tubes through which the flue gas passes sequentially to a collector manifold, exhausted by a blower. The coil is slanted downwardly from the hot gas manifold. Condensate formed in the first and second sets of tubes flows downward to an intermediate manifold between the first and second sets of tubing, condensate from this intermediate manifold is drained downward to a collector manifold beneath.

Abstract: For use with a hydrocarbon-fueled furnace whose secondary heat exchanger so cools the combusted gas as to condense much of its water vapor, and having a blower to the flue, a combined trap and drain is provided for the condensate formed both in the heat exchanger and in the flue. At the base of the flue is a standpipe whose upper overflow outlet is connected to a dip tube. Between the level of its lower end and the overflow level is a side inlet into the standpipe, connected to a tube leading downward from the heat exchanger's condenser. When the furnace blower applies both negative pressure to the condenser and positive pressure to the flue, the water levels in the trap and tube adjust to balance out these pressures.

Abstract: A compact secondary heat exchanger, installed above the preliminary heat exchanger in a down draft-type gas burning furnace, so greatly reduces combustion gas temperature as to recover a portion of the latent heat in the water vapor created by burning the hydrocarbon gas.