Abstract: A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer structure of atomically thin two-dimensional sheets.

Abstract: A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer structure of atomically thin two-dimensional sheets.

Abstract: Plasma-assisted techniques are provided for fabricating semiconductor devices. In one aspect, a plasma is applied to a substrate before exfoliating layers of a multi-layer structure of atomically thin two-dimensional sheets onto the substrate. The exfoliated layers serve as the basis for constructing a semiconductor device. In another aspect, a p-n junction is formed by applying a plasma to top layers of a multi-layer structure of atomically thin two-dimensional sheets and then exfoliating a portion of the multi-layer structure onto a bottom electrode.

Abstract: Plasma-assisted techniques are provided for fabricating semiconductor devices. In one aspect, a plasma is applied to a substrate before exfoliating layers of a multi-layer structure of atomically thin two-dimensional sheets onto the substrate. The exfoliated layers serve as the basis for constructing a semiconductor device. In another aspect, a p-n junction is formed by applying a plasma to top layers of a multi-layer structure of atomically thin two-dimensional sheets and then exfoliating a portion of the multi-layer structure onto a bottom electrode.