Abstract: A power semiconductor package has a small footprint. A preparation method is used to fabricate the power semiconductor package. A first semiconductor chip and a second semiconductor chip are attached to a front side and a back side of a die paddle respectively. Conductive pads are then attached to electrodes at top surfaces of the first and second semiconductor chips. It is followed by a formation of a plastic package body covering the die paddle, the first and second semiconductor chips, and the conductive pads. Side surfaces of the conductive pads are exposed from a side surface of the plastic package body.

Abstract: A power semiconductor package has a small footprint. A preparation method is used to fabricate the power semiconductor package. A first semiconductor chip and a second semiconductor chip are attached to a front side and a back side of a die paddle respectively. Conductive pads are then attached to electrodes at top surfaces of the first and second semiconductor chips. It is followed by a formation of a plastic package body covering the die paddle, the first and second semiconductor chips, and the conductive pads. Side surfaces of the conductive pads are exposed from a side surface of the plastic package body.

Abstract: A method of manufacturing a semiconductor package having a small gate clip is disclosed. A first and second semiconductor chips, each of which includes a source electrode and a gate electrode at a top surface, are attached on two adjacent lead frame units of a lead frame such that the lead frame unit with the first chip formed thereon is rotated 180 degrees in relation to the other lead frame unit with the second semiconductor chip formed thereon. A first and second clip sets are mounted on the first and second semiconductor chips, wherein the first clip set is connected to the gate electrode of the first chip, the source electrode of the second chip, and their corresponding leads and the second clip set is connected to the gate electrode of the second chip, the source electrode of the first chip and their corresponding leads.

Abstract: A power semiconductor package has a small footprint. A preparation method is used to fabricate the power semiconductor package. A first semiconductor chip and a second semiconductor chip are attached to a front side and a back side of a die paddle respectively. Conductive pads are then attached to electrodes at top surfaces of the first and second semiconductor chips. It is followed by a formation of a plastic package body covering the die paddle, the first and second semiconductor chips, and the conductive pads. Side surfaces of the conductive pads are exposed from a side surface of the plastic package body.

Abstract: A method of manufacturing a semiconductor package having a small gate clip is disclosed. A first and second semiconductor chips, each of which includes a source electrode and a gate electrode at a top surface, are attached on two adjacent lead frame units of a lead frame such that the lead frame unit with the first chip formed thereon is rotated 180 degrees in relation to the other lead frame unit with the second semiconductor chip formed thereon. A first and second clip sets are mounted on the first and second semiconductor chips, wherein the first clip set is connected to the gate electrode of the first chip, the source electrode of the second chip, and their corresponding leads and the second clip set is connected to the gate electrode of the second chip, the source electrode of the first chip and their corresponding leads.

Abstract: A method of manufacturing a semiconductor package having a small gate clip is disclosed. A first and second semiconductor chips, each of which includes a source electrode and a gate electrode at a top surface, are attached on two adjacent lead frame units of a lead frame such that the lead frame unit with the first chip formed thereon is rotated 180 degrees in relation to the other lead frame unit with the second semiconductor chip formed thereon. A first and second clip sets are mounted on the first and second semiconductor chips, wherein the first clip set is connected to the gate electrode of the first chip, the source electrode of the second chip, and their corresponding leads and the second clip set is connected to the gate electrode of the second chip, the source electrode of the first chip and their corresponding leads.

Abstract: The present invention discloses the MCSP power semiconductor device and the preparation method thereof. In the present invention method, a metal foil layer is attached to the back of the wafer using a conductive adhesive layer and a composite tape is laminated on the metal foil layer. Thus, individual MCSP power semiconductor devices are separated by cutting the wafer, the conductive adhesive, the metal foil layer and the composite tape along the scribe lines between adjacent semiconductor chips formed on the front of the wafer.

Abstract: A method of manufacturing a semiconductor package having a small gate clip is disclosed. A first and second semiconductor chips, each of which includes a source electrode and a gate electrode at a top surface, are attached on two adjacent lead frame units of a lead frame such that the lead frame unit with the first chip formed thereon is rotated 180 degrees in relation to the other lead frame unit with the second semiconductor chip formed thereon. A first and second clip sets are mounted on the first and second semiconductor chips, wherein the first clip set is connected to the gate electrode of the first chip, the source electrode of the second chip, and their corresponding leads and the second clip set is connected to the gate electrode of the second chip, the source electrode of the first chip and their corresponding leads.

Abstract: The present invention discloses the MCSP power semiconductor device and the preparation method thereof. In the present invention method, a metal foil layer is attached to the back of the wafer using a conductive adhesive layer and a composite tape is laminated on the metal foil layer. Thus, individual MCSP power semiconductor devices are separated by cutting the wafer, the conductive adhesive, the metal foil layer and the composite tape along the scribe lines between adjacent semiconductor chips formed on the front of the wafer.

Abstract: A semiconductor package includes a lead frame having a die paddle and a plurality of leads connected to die paddle, where each lead has a lead surface parallel to die paddle and is a continuous extension bending upward from die paddle. A semiconductor chip is mounted on die paddle, where drain metal layer covering a first surface of chip is connected to die paddle, and source metal layer and gate metal layer are located on a second surface opposite to first surface with gate metal layer located at one corner of the second surface. A source metal plate and a gate metal plate are attached on source metal layer and gate metal layer respectively. A molding layer covers lead frame, semiconductor chip, source metal plate and gate metal plate, where lead surface, top surfaces of source metal plate and gate metal plate are exposed from top surface of molding layer.

Abstract: A power semiconductor package with a small footprint and a preparation method thereof are disclosed. The first semiconductor chip and second semiconductor chip are attached on the front and back sides of a die paddle. Conductive pads are then attached on the electrodes at the top surfaces of the first and second semiconductor chips flowed by the formation of a plastic package body covering the die paddle, first and second semiconductor chips, the conductive pads, where a side surface of a conductive pad is exposed from a side surface of the plastic package body.

Abstract: A method of manufacturing a semiconductor package having a small gate clip is disclosed. A first and second semiconductor chips, each of which includes a source electrode and a gate electrode at a top surface, are attached on two adjacent lead frame units of a lead frame such that the lead frame unit with the first chip formed thereon is rotated 180 degrees in relation to the other lead frame unit with the second semiconductor chip formed thereon. A first and second clip sets are mounted on the first and second semiconductor chips, wherein the first clip set is connected to the gate electrode of the first chip, the source electrode of the second chip, and their corresponding leads and the second clip set is connected to the gate electrode of the second chip, the source electrode of the first chip and their corresponding leads.

Abstract: The present disclosure relates to the field of mobile communication technologies, and provides a method for locating operation nodes in a communication system. The method includes using an identifier in the received message to obtain an adjusted path from the root node of the management tree of the client to the standard management object corresponding to the identifier, using the message to obtain a relative path between the target operation node and the root node of the standard management object on the management tree, concatenating the adjusted path with the relative path, and locating the target operation node according to the concatenated path. The present disclosure also provides a system for locating operation nodes, a client for locating operation nodes in a communication system, and a server for performing management operations for clients.