Abstract: A wet etch apparatus includes a wafer chuck, a dispensing nozzle, a liquid etchant container, and an electric field generator. The dispensing nozzle is above the wafer chuck. The liquid etchant container is in fluid communication with the dispensing nozzle. The electric field generator is operative to generate an electric field across the wafer chuck. The electric field generator includes a first electrode and a second electrode spaced apart from the first electrode in a direction substantially perpendicular to a top surface of the wafer chuck, and the second electrode is an electrode plate above the wafer chuck.

Abstract: A wet etch apparatus includes a wafer chuck, a dispensing nozzle above the wafer chuck, a rail, first and second vehicles, and an electric field generator. The rail extends at least from a first position aligned laterally with the wafer chuck to a second position higher than a top surface of the wafer chuck. The first and second vehicles are movable along the rail. The electric field generator is operative to generate an electric field across the wafer chuck. The electric field generator comprises a first electrode carried by the first vehicle and a second electrode carried by the second vehicle.

Abstract: A wet etch apparatus includes a wafer chuck, a dispensing nozzle, a liquid etchant container, and an electric field generator. The dispensing nozzle is above the wafer chuck. The liquid etchant container is in fluid communication with the dispensing nozzle. The electric field generator is operative to generate an electric field across the wafer chuck. The electric field generator includes a first electrode and a second electrode spaced apart from the first electrode in a direction substantially perpendicular to a top surface of the wafer chuck, and the second electrode is an electrode plate above the wafer chuck.

Abstract: A method includes dispensing a chemical solution including charged ions onto a semiconductor substrate to chemically etch a target structure on the semiconductor substrate, and applying an electric field on the semiconductor substrate during dispensing the chemical solution on the semiconductor substrate, such that the charged ions in the chemical solution are moved in response to the electric field.

Abstract: A method includes dispensing a liquid etchant onto a wafer, wherein the wafer is free from rotation during dispensing the liquid etchant; blowing the liquid etchant on the wafer using a gas flow, wherein a direction of the gas flow remains substantially constant during dispensing the liquid etchant; and turning the gas flow off after a target structure on the wafer is etched away by the liquid etchant.

Abstract: A method includes dispensing a chemical solution including charged ions onto a semiconductor substrate to chemically etch a target structure on the semiconductor substrate, and applying an electric field on the semiconductor substrate during dispensing the chemical solution on the semiconductor substrate, such that the charged ions in the chemical solution are moved in response to the electric field.

Abstract: A method includes dispensing a liquid etchant onto a wafer, wherein the wafer is free from rotation during dispensing the liquid etchant; blowing the liquid etchant on the wafer using a gas flow, wherein a direction of the gas flow remains substantially constant during dispensing the liquid etchant; and turning the gas flow off after a target structure on the wafer is etched away by the liquid etchant.