Patents by Inventor Honguk CHEON

Honguk CHEON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11770903
    Abstract: Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).
    Type: Grant
    Filed: October 27, 2021
    Date of Patent: September 26, 2023
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji Young Byun, Kwang-Deok Choi, Honguk Cheon
  • Publication number: 20220132676
    Abstract: Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).
    Type: Application
    Filed: October 27, 2021
    Publication date: April 28, 2022
    Inventors: Ji Young BYUN, Kwang-deok CHOI, Honguk CHEON