Abstract: A method, a circuit and a display device for driving an organic light emitting diode, wherein a driving transistor (DTFT) for driving a display element is turned off by jumping one or more of a reference voltage input (Vref), a reset voltage input (Vinit) and a data signal input (Vdata) before beginning to output an EL high level (ELVDD) of a pixel compensation circuit and after beginning to output an EL low level (ELVSS), to overcome the splash screen phenomenon during power-up and direct current-direct current driving failure.

Abstract: The present disclosure provides a test element group, an array substrate, a test device and a test method. The test element group includes an array of Thin Film Transistors (TFTs), in which first electrodes of the TFTs in each row are connected to a first connection end, second electrodes of the TFTs in each column are connected to a second connection end, and third electrodes of all of the TFTs in the array are connected to an identical third connection end. The first electrode, the second electrode and the third electrode correspond to the source electrode, the drain source and the gate source of the TFT.

Abstract: A conductive structure and a manufacturing method thereof, an array substrate and a display device. The conductive structure includes a plurality of first metal layers made of aluminum, and between every two first metal layers that are adjacent, there is also provided a second metal layer, which is made of a metal other than aluminum. With the conductive structure, the hillock phenomenon that happens to the conductive structure when it is heated can be decreased without reducing the overall thickness of the conductive structure.

Abstract: Provided are a method and an apparatus for manufacturing a semiconductor device. The method comprises: forming a first wiring layer on a base substrate; forming an interlayer dielectric layer on the first wiring layer, with contact holes being provided in the interlayer dielectric layer; subjecting bottoms of the contact holes to a dry cleaning process; and forming a second wiring layer on the interlayer dielectric layer, wherein the second wiring layer is electrically connected to the first wiring layer via the contact holes.

Abstract: The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.

Abstract: A substrate heating device and substrate heating method is disclosed. The device comprises: a heating layer for transferring heat; a transfer pipe for transferring a gas to a diffusion layer; the diffusion layer for enabling the gas to be uniformly distributed between a conducting layer and the heating layer; and the conducting layer for conducting the gas in the diffusion layer to below a substrate to be heated. The device can uniformly and fully heat the substrate to be heated, thus enabling the to-be-heated substrate to have a more uniform surface temperature, and achieving a better effect in an etching, deposition and/or sputtering process of the substrate to be heated.

Abstract: Embodiments of the present invention disclose a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display device. The manufacturing method of a thin film transistor includes a step of forming an active layer, and the step of forming an active layer includes: forming a first poly-silicon layer and a second poly-silicon layer on the first poly-silicon layer separately, and adding dopant ions into the second poly-silicon layer and an upper surface layer of the first poly-silicon layer. By using the manufacturing method of a thin film transistor, defect states and unstable factors of interface in the thin film transistor can be reduced, thereby improving stability of the LTPS thin film transistor and obtaining an array substrate and a display device having more stable performance.

Abstract: The present invention provides a mask plate, relating to a field of exposure technology, which can solve the problem of an existing mask plate that a resolution is limited by an effect of diffraction. The mask plate of the invention includes: a pattern structure, including a light blocking region and a light transmitting region; and a total reflection structure provided at an light-exiting side of the pattern structure, the total reflection structure including a high refraction layer and a first low refraction layer sequentially provided in a direction away from the pattern structure and contacting each other, wherein a refractive index of the high refraction layer is greater than a refractive index of the first low refraction layer.

Abstract: The present disclosure provides a test element group, an array substrate, a test device and a test method. The test element group includes an array of Thin Film Transistors (TFTs), in which first electrodes of the TFTs in each row are connected to a first connection end, second electrodes of the TFTs in each column are connected to a second connection end, and third electrodes of all of the TFTs in the array are connected to an identical third connection end. The first electrode, the second electrode and the third electrode correspond to the source electrode, the drain source and the gate source of the TFT.

Abstract: The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.

Abstract: A conductive structure and a manufacturing method thereof, an array substrate and a display device. The conductive structure includes a plurality of first metal layers made of aluminum, and between every two first metal layers that are adjacent, there is also provided a second metal layer, which is made of a metal other than aluminum. With the conductive structure, the hillock phenomenon that happens to the conductive structure when it is heated can be decreased without reducing the overall thickness of the conductive structure.

Abstract: Embodiments of the present invention disclose a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display device. The manufacturing method of a thin film transistor includes a step of forming an active layer, and the step of forming an active layer includes: forming a first poly-silicon layer and a second poly-silicon layer on the first poly-silicon layer separately, and adding dopant ions into the second poly-silicon layer and an upper surface layer of the first poly-silicon layer. By using the manufacturing method of a thin film transistor, defect states and unstable factors of interface in the thin film transistor can be reduced, thereby improving stability of the LTPS thin film transistor and obtaining an array substrate and a display device having more stable performance.

Abstract: Embodiments of the present disclosure provide a thin-film transistor (TFT), an array substrate and a manufacturing method thereof, and a display device. The method for preparing a TFT according to an embodiment of the present disclosure may comprise: providing a base substrate; and forming an active layer and an insulation layer on the base substrate. The active layer and the insulation layer may be arranged sequentially and in contact with each other, and the insulation layer may include at least one first insulation layer one of which is in contact with the active layer. The step of forming the first insulation layer may comprise: forming a first insulation film; and conducting a repairing process on the first insulation film by using a repairing source which provides filling atoms, so as to form bonds between at least part of dangling bonds in the first insulation film and the filling atoms.