Abstract: Disclosed is a method and apparatus for frequency drift correction of magnetic resonance CEST imaging, and a medium and an imaging device. The method comprises the following steps: firstly, in the frequency drift correction module, exciting a target slice by using a small flip-angle radio-frequency pulse, and acquiring a single line of free induction decay signals or two lines of non-phase encoding gradient echo signals; secondly, respectively calculating a value of the main magnetic field frequency drift according to phase information and an acquisition time of the single line of free induction decay signals or the two lines of non-phase encoding gradient echo signals; then adjusting the center frequency of the magnetic resonance device in real time according to the calculated value of the main magnetic field frequency drift, and achieving the real-time correction of main magnetic field frequency drift; and finally, performing CEST imaging.

Abstract: The present disclosure discloses a high-entropy alloy powder for laser cladding and a use method thereof. The alloy powder is CoCrFeMnNiCx, and x has a value of 0.1-0.15. The specific method includes: subjecting a 45 steel substrate to surface pretreatment, mixing the weighed CoCrFeMnNi high-entropy alloy powder with different content of a nano-C powder uniformly and pre-placed on the pre-treated substrate surface to form a prefabricated layer, then placing the prefabricated layer at 80-90° C. for constant temperature treatment for 8-12 h, and under a protective atmosphere, subjecting the cladding powder to laser cladding on the surface of the 45 steel. The method of the present disclosure prepares a CoCrFeMnNiCx high-entropy alloy coating with performance superior to the CoCrFeMnNi high-entropy alloy coating.

Abstract: The present disclosure discloses a high-entropy alloy powder for laser cladding and a use method thereof. The alloy powder is CoCrFeMnNiCx, and x has a value of 0.1-0.15. The specific method includes: subjecting a 45 steel substrate to surface pretreatment, mixing the weighed CoCrFeMnNi high-entropy alloy powder with different content of a nano-C powder uniformly and pre-placed on the pre-treated substrate surface to form a prefabricated layer, then placing the prefabricated layer at 80-90° C. for constant temperature treatment for 8-12 h, and under a protective atmosphere, subjecting the cladding powder to laser cladding on the surface of the 45 steel. The method of the present disclosure prepares a CoCrFeMnNiCx high-entropy alloy coating with performance superior to the CoCrFeMnNi high-entropy alloy coating.

Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a lower contact in a lower interlayer dielectric layer. A base contact layer is formed overlying the lower interlayer dielectric layer and the lower contact, and a base contact is formed by removing a portion of the base contact layer. The base contact is formed in electrical communication with the lower contact. A base interlayer dielectric layer is formed overlying the lower interlayer dielectric layer after forming the base contact, where the base interlayer dielectric layer is adjacent to a base contact side surface. A memory cell is formed overlying the base contact, where the memory cell is in electrical communication with the base contact.

Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a lower contact in a lower interlayer dielectric layer. A base contact layer is formed overlying the lower interlayer dielectric layer and the lower contact, and a base contact is formed by removing a portion of the base contact layer. The base contact is formed in electrical communication with the lower contact. A base interlayer dielectric layer is formed overlying the lower interlayer dielectric layer after forming the base contact, where the base interlayer dielectric layer is adjacent to a base contact side surface. A memory cell is formed overlying the base contact, where the memory cell is in electrical communication with the base contact.

Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a lower contact in a lower interlayer dielectric layer. A base contact layer is formed overlying the lower interlayer dielectric layer and the lower contact, and a base contact is formed by removing a portion of the base contact layer. The base contact is formed in electrical communication with the lower contact. A base interlayer dielectric layer is formed overlying the lower interlayer dielectric layer after forming the base contact, where the base interlayer dielectric layer is adjacent to a base contact side surface. A memory cell is formed overlying the base contact, where the memory cell is in electrical communication with the base contact.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided herein. In an embodiment, the integrated circuit includes a plurality of magnetic random access memory (MRAM) structures. Each of the MRAM structures includes a bottom electrode. The MRAM structures further include a magnetic tunnel junction stack (MTJ stack) overlying and in electrical communication with the bottom electrode. The MRAM structures also include a top electrode layer overlying and in electrical communication with the MTJ stack. The integrated circuit further includes a spin-on dielectric layer at least partially encapsulating the MRAM structures with the spin-on dielectric layer disposed between adjacent MRAM structures.