Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A wireless transceiving module includes an antenna, a signal processing unit and a shielding case. The antenna is used for transceiving an RF signal, and has a signal point. The signal processing unit is coupled to the signal point for processing the RF signal, and has an RF circuit coupled to the antenna and a baseband circuit for converting a first baseband signal into a first RF signal and for converting a second RF signal into a second baseband signal. The shielding case is used for electromagnetically shielding the signal processing unit, and the shielding case acts as a ground plane for the antenna.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: The present invention discloses a transceiver module used in a wireless communication system. The transceiver module includes a transceiver IC, a T/R switch, and an amplification path electrically connected between the transceiver IC and the T/R switch. The transceiver IC includes an amplifier control unit, and a pre-amplifying unit electrically connected to the amplification path. The pre-amplifying unit pre-amplifies a first RF signal to generate a second RF signal. The amplification path amplifies the second RF signal to generate a third RF signal, and sends the third RF signal to the T/R switch. Wherein the transceiver module only uses one discrete power amplifier transistor in the amplification path to amplify the second RF signal.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: A power amplifier integrated circuit includes a plurality ofheterojunction bipolar transistors having a plurality of bases, a plurality of ballast resistors, and a capacitor. Each ballast resistor is connected between a base of the transistors and a DC node to which a DC voltage is applied. The capacitor is connected between an RF node, which supplies an RF signal, and the plurality of bases of the transistors. The capacitor provides a distinct path for the RF input signal having a substantially high capacitance, so that the RF input signal does not suffer significant signal loss.

Abstract: A power amplifier integrated circuit includes a plurality of heterojunction bipolar transistors having a plurality of bases, a plurality of ballast resistors, and a capacitor. Each ballast resistor is connected between a base of the transistor and a DC node to which a DC voltage is applied. The capacitor is connected between an RF node, which supplies an RF signal, and the plurality of bases of the transistors. The capacitor provides a distinct path for the RF input signal having a substantially high capacitance, so that the RF input signal does not suffer significant signal loss.

Abstract: A power amplifier integrated circuit includes a plurality of heterojunction bipolar transistors having a plurality of bases, a plurality of ballast resistors, and a capacitor. Each ballast resistor is connected between a base of the transistor and a DC node to which a DC voltage is applied. The capacitor is connected between an RF node, which supplies an RF signal, and the plurality of bases of the transistors. The capacitor provides a distinct path for the RF input signal having a substantially high capacitance, so that the RF input signal does not suffer significant signal loss.

Abstract: A power amplifier integrated circuit includes a plurality of heterojunction bipolar transistors having a plurality of bases, a plurality of ballast resistors, and a capacitor. Each ballast resistor is connected between a base of the transistor and a DC node to which a DC voltage is applied. The capacitor is connected between an RF node, which supplies an RF signal, and the plurality of bases of the transistors. The capacitor provides a distinct path for the RF input signal having a substantially high capacitance, so that the RF input signal does not suffer significant signal loss.

Abstract: A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

Abstract: An antenna assembly includes a receiving antenna and a separate transmitting antenna with an isolation circuit disposed in between to thereby isolate the Tx and Rx signals and provide a sufficient amount of attenuation outside the desired frequency band. The dual antenna structure enables the elimination of a conventional duplexer for duplex operation. In this context, the arrangement minimizes occupied space on the PCB while reducing manufacturing costs.

Abstract: Polarization diversity is achieved in mobile terminals with three antennas. Each of the three antennas are orthogonal to one another. With three orthogonal antennas, the mobile terminal increases the likelihood that at least one antenna's polarity will match that of the incoming signal's wavefront, regardless of how the user orients the mobile terminal. Once a signal has been received by each of the three antennas, they can be selected or combined using a variety of techniques and/or algorithms. Among these techniques are selection diversity, switching selection diversity, fixed combining diversity, and adaptive combining diversity (e.g., maximal ratio combining and interference rejection combining).

Abstract: A directional antenna assembly includes a reflector and a director disposed on opposite sides of an antenna radiator element to minimize body loading effects and thereby maximize available antenna gain. The radiator is disposed in a first casing, and the reflector and director are disposed in a second casing selectively enageable with the first casing. In one arrangement, the position of the reflector and director relative to the user is adjustable to accommodate the position of the communications terminal relative to the user. In other arrangements, the directional structure is selectively enageable and disengageable with the antenna radiator.