Abstract: A fabrication method prepares a photovoltaic module integrated with a vehicle body. A mold includes an upper mold and a lower mold, the upper surface of the upper mold is a first forming surface, and the lower surface of the lower mold is a second forming surface; then, the two pieces are formed into a first thermoplastic material and a second thermoplastic material of a vehicle body element; the first thermoplastic material and the second thermoplastic material are moved to be between the upper mold and the lower mold; the first thermoplastic material and the second thermoplastic material are made to attach to the second forming surface and the first forming surface, respectively; the upper mold and the lower mold are driven to close, and a photovoltaic module is packaged into the first thermoplastic material and the second thermoplastic material and a finished product is obtained after cooling and shaping.

Abstract: A method for classifying an image of a displaying base plate includes: acquiring an image to be checked; from a first predetermined-type set, determining a type of the image to be checked. The first predetermined-type set includes: a first image type, a second image type and a third image type. An image of the first image type is a no-defect image, an image of the second image type is a blurred image, and an image of the third image type is a defect image. When the type of the image to be checked is the third image type, by using a first convolutional neural network, determining a defect data of the image to be checked, wherein the defect image refers to an image of a displaying base plate having a defect, and the defect data contains a defect type of the displaying base plate in the image to be checked.

Abstract: The present disclosure provides a driving data processing method, an apparatus, a device, an automatic driving vehicle, a medium and a product, including: collecting first driving data generated by using a target structure in a driving system of a target vehicle, where the first driving data uses a binary number system; determining a target descriptor corresponding to the target structure, where the target descriptor is used to describe member information of the target structure; parsing the target descriptor to obtain at least one piece of member information of the target structure; parsing the first driving data according to the at least one piece of the member information to obtain target data corresponding to each of the at least one piece of the member information; and performing a data processing operation based on the target data corresponding to each of the at least one piece of the member information.

Abstract: The present disclosure provides a driving data processing method, an apparatus, a device, an automatic driving vehicle, a medium and a product, including: collecting first driving data generated by using a target structure in a driving system of a target vehicle, where the first driving data uses a binary number system; determining a target descriptor corresponding to the target structure, where the target descriptor is used to describe member information of the target structure; parsing the target descriptor to obtain at least one piece of member information of the target structure; parsing the first driving data according to the at least one piece of the member information to obtain target data corresponding to each of the at least one piece of the member information; and performing a data processing operation based on the target data corresponding to each of the at least one piece of the member information.

Abstract: A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT technical field. The manufacture method includes following steps: (1) preparing a semiconductor substrate; (2) forming an epitaxial layer grow on a first side of the semiconductor substrate by epitaxial growth; (3) preparing and forming a gate and an emitter of the Trench Insulated Gate Bipolar Transistor on a second side of the semiconductor substrate; (4) thinning the epitaxial layer to form a collector region; (5) metalizing the collector region to form a collector. The cost of the manufacture method is low and the performance of the Trench IGBT formed by the manufacture method is good.

Abstract: A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT technical field. The manufacture method includes following steps: (1) preparing a semiconductor substrate; (2) forming an epitaxial layer grow on a first side of the semiconductor substrate by epitaxial growth; (3) preparing and forming a gate and an emitter of the Trench Insulated Gate Bipolar Transistor on a second side of the semiconductor substrate; (4) thinning the epitaxial layer to form a collector region; (5) metalizing the collector region to form a collector. The cost of the manufacture method is low and the performance of the Trench IGBT formed by the manufacture method is good.