Abstract: The present disclosure provides a driving data processing method, an apparatus, a device, an automatic driving vehicle, a medium and a product, including: collecting first driving data generated by using a target structure in a driving system of a target vehicle, where the first driving data uses a binary number system; determining a target descriptor corresponding to the target structure, where the target descriptor is used to describe member information of the target structure; parsing the target descriptor to obtain at least one piece of member information of the target structure; parsing the first driving data according to the at least one piece of the member information to obtain target data corresponding to each of the at least one piece of the member information; and performing a data processing operation based on the target data corresponding to each of the at least one piece of the member information.

Abstract: The present disclosure provides a driving data processing method, an apparatus, a device, an automatic driving vehicle, a medium and a product, including: collecting first driving data generated by using a target structure in a driving system of a target vehicle, where the first driving data uses a binary number system; determining a target descriptor corresponding to the target structure, where the target descriptor is used to describe member information of the target structure; parsing the target descriptor to obtain at least one piece of member information of the target structure; parsing the first driving data according to the at least one piece of the member information to obtain target data corresponding to each of the at least one piece of the member information; and performing a data processing operation based on the target data corresponding to each of the at least one piece of the member information.

Abstract: A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT technical field. The manufacture method includes following steps: (1) preparing a semiconductor substrate; (2) forming an epitaxial layer grow on a first side of the semiconductor substrate by epitaxial growth; (3) preparing and forming a gate and an emitter of the Trench Insulated Gate Bipolar Transistor on a second side of the semiconductor substrate; (4) thinning the epitaxial layer to form a collector region; (5) metalizing the collector region to form a collector. The cost of the manufacture method is low and the performance of the Trench IGBT formed by the manufacture method is good.

Abstract: A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT technical field. The manufacture method includes following steps: (1) preparing a semiconductor substrate; (2) forming an epitaxial layer grow on a first side of the semiconductor substrate by epitaxial growth; (3) preparing and forming a gate and an emitter of the Trench Insulated Gate Bipolar Transistor on a second side of the semiconductor substrate; (4) thinning the epitaxial layer to form a collector region; (5) metalizing the collector region to form a collector. The cost of the manufacture method is low and the performance of the Trench IGBT formed by the manufacture method is good.