Patents by Inventor Hongxiang Wei

Hongxiang Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin torque oscillator with high power output and its applications
    Patent number: 10135392
    Abstract: The present invention relates to a spin torque oscillator with high power output and its applications. A spin torque oscillator may include a first magnetic reference layer having a fixed magnetization, a magnetic precession layer having a magnetization capable of precessing about an initial direction, and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer. The first barrier layer is formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: November 20, 2018
    Assignee: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Hongxiang Wei, Jiafeng Feng, Xiaoguang Zhang, Houfang Liu, Xiufeng Han
  • SPIN TORQUE OSCILLATOR WITH HIGH POWER OUTPUT AND ITS APPLICATIONS
    Publication number: 20180006657
    Abstract: The present invention relates to a spin torque oscillator with high power output and its applications. A spin torque oscillator may include a first magnetic reference layer having a fixed magnetization, a magnetic precession layer having a magnetization capable of precessing about an initial direction, and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer. The first barrier layer is formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator.
    Type: Application
    Filed: September 27, 2016
    Publication date: January 4, 2018
    Inventors: Hongxiang Wei, Jiafeng Feng, Xiaoguang Zhang, Houfang Liu, Xiufeng Han
  • Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same
    Patent number: 7936595
    Abstract: Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.
    Type: Grant
    Filed: December 31, 2006
    Date of Patent: May 3, 2011
    Assignee: Institute of Physics, Chinese Academy of Sciences
    Inventors: Xiufeng Han, Ming Ma, Qihang Qin, Hongxiang Wei, Lixian Jiang, Yunan Han
  • CLOSE SHAPED MAGNETIC MULTI-LAYER FILM COMPRISING OR NOT COMPRISING A METAL CORE AND THE MANUFACTURE METHOD AND THE APPLICATION OF THE SAME
    Publication number: 20090168506
    Abstract: Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.
    Type: Application
    Filed: December 31, 2006
    Publication date: July 2, 2009
    Inventors: Xiufeng Han, Ming Ma, Qihang Tan, Hongxiang Wei, Lixian Jiang, Yunan Han