Abstract: The present disclosure provides a cobalt-free and nickel-free positive electrode material and a preparation method therefor, and a battery. The preparation method includes: preparing a cobalt-free and nickel-free matrix material, and mixing the cobalt-free and nickel-free matrix material, a lithium source, and a divalent manganese compound for reaction to obtain the cobalt-free and nickel-free positive electrode material. By adding the divalent manganese compound, the generation of lamellar LiMnO2 and spinel LiMn2O4 is inhibited, the generation of lamellar Li2MnO3 is promoted, and the cycle performance of the material is improved.

Abstract: The present disclosure provides a gel electrolyte precursor and use thereof. The gel electrolyte precursor comprises a gel matrix monomer, a flexible additive, a polymerization initiator, and a lithium salt. The gel matrix monomer comprises an acrylonitrile-based monomer. The use of same in a semisolid battery achieves good electrical performance, and also reduces the amount of an electrolyte used. An acrylonitrile-based polymer obtained by the in-situ polymerization and gelation of an acrylonitrile-based monomer has good flame retardant performance and high voltage resistance, improving the safety performance of a battery.

Abstract: Provided are a cobalt-free positive electrode material, a preparation method thereof and a lithium ion battery. The preparation method includes: first sintering step is performed on a lithium source material and a cobalt-free precursor, to obtain a sintered product; the sintered product is crushed to 1 to 2 ?m, to obtain a cobalt-free single crystal material; and second sintering step is performed on the cobalt-free single crystal material, a boron coating agent and a carbon coating agent, to obtain the cobalt-free positive electrode material. The cobalt-free positive electrode material prepared by the above method has advantages of stable structure, high electric capacity, excellent current rate performance and good cycle performance and the like.

Abstract: Provided in the present disclosure are a gel electrolyte precursor and an application thereof. The gel electrolyte precursor comprises a gel skeleton monomer, a flexible additive, a crosslinking agent, a polymerization initiator, and a lithium salt. Applying same to a semi-solid battery can reduce the amount of electrolyte while ensuring the electrical performance of the battery, thereby achieving the purpose of improving battery safety performance.

Abstract: The present disclosure provides a gel electrolyte precursor and use thereof. The gel electrolyte precursor comprises a gel matrix monomer, a flexible additive, a polymerization initiator, and a lithium salt. The gel matrix monomer comprises an acrylonitrile-based monomer. The use of same in a semisolid battery achieves good electrical performance, and also reduces the amount of an electrolyte used. An acrylonitrile-based polymer obtained by the in-situ polymerization and gelation of an acrylonitrile-based monomer has good flame retardant performance and high voltage resistance, improving the safety performance of a battery.

Abstract: Provided are a lithium nickel manganese oxide composite material, a preparation method thereof and a lithium ion battery. The preparation method includes: a first calcining process is performed on a nano-oxide and a nickel-manganese precursor, to obtain an oxide-coated nickel-manganese precursor; and a second calcining process is performed on the precursor and a lithium source material, to obtain the lithium nickel manganese oxide, and a temperature of the first calcining process is lower than the second calcining process. At a lower temperature, the nano-oxide may be melted, a denser nano-oxide coating layer is formed on the surface of the precursor, so the oxide-coated nickel-manganese precursor is obtained. At a higher temperature, the nano-oxide, a nickel-manganese material and a lithium element may be more deeply combined. A problem that the nano-oxide layer is easy to fall off is solved, and cycle performance of the lithium nickel manganese oxide is greatly improved.

Abstract: A composite positive electrode material for a lithium ion battery, a preparation method therefor, and a use thereof. The composite positive electrode material comprises a positive electrode material core and a halide coating layer that is coated on the surface of the positive electrode material core, wherein halide comprises Li3YX6, and X is at least one among halogens. By means of the coating of the halide coating layer, the ionic conductivity and structural stability of the positive electrode material are greatly increased, which reduces the surface impedance of the material.

Abstract: Provided are a cobalt-free system, a positive electrode slurry, a slurry homogenization method therefor, and the use thereof. The cobalt-free system comprises a cobalt-free material, a binder, a conductive agent and a pH regulator. The cobalt-free system can reduce the rebound degree of the viscosity of a slurry after leaving to stand to the same degree as that of a ternary 811 single crystal, and can also improve the stability of the coating surface density of the cobalt-free material to the same level as that of a ternary material.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns; a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements; a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction; and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction; an electrode layer formed adjacent to the volatile switching layer; and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes a plurality of metal-rich particles or clusters embedded in a matrix or at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element, which has a low resistance state and a high resistance state, and a two-terminal selector coupled to the MTJ memory element in series. The MTJ memory element includes a magnetic free layer and a magnetic reference layer with an insulating tunnel junction layer interposed therebetween. The two-terminal selector has an insulative state and a conductive state. The two-terminal selector in the conductive state has substantially lower resistance when switching the MTJ memory element from the low to high resistance state than from the high to low resistance state. The voltages applied to the memory cell to respectively switch the MTJ memory element from the low to high resistance state and from the high to low resistance state may be substantially same.

Abstract: The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns; a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements; a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction; and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction; an electrode layer formed adjacent to the volatile switching layer; and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.

Abstract: The present invention is directed to a memory device including a magnetic memory element; a horizontal conductive line disposed above the magnetic memory element; a bottom electrode formed beneath the magnetic memory element and having a top, first and second sides that are opposite to each other; a first vertical conductive line formed adjacent to the first side of the bottom electrode with a first volatile switching layer and a first electrode layer interposed therebetween; and a second vertical conductive line formed adjacent to the second side of the bottom electrode with a second volatile switching layer and a second electrode layer interposed therebetween. The magnetic memory element is electrically connected to the horizontal conductive line at one end and to the bottom electrode at the other end.

Abstract: The present invention is directed to a memory device including a magnetic memory element; a horizontal conductive line disposed above the magnetic memory element; a bottom electrode formed beneath the magnetic memory element and having a top, first and second sides that are opposite to each other; a first vertical conductive line formed adjacent to the first side of the bottom electrode with a first volatile switching layer and a first electrode layer interposed therebetween; and a second vertical conductive line formed adjacent to the second side of the bottom electrode with a second volatile switching layer and a second electrode layer interposed therebetween. The magnetic memory element is electrically connected to the horizontal conductive line at one end and to the bottom electrode at the other end.

Abstract: Embodiments provide a selector device for selecting a memory cell. The selector device includes a first electrode; a second electrode; and a switching layer sandwiched between the first electrode and the second electrode. The switching layer includes at least one metal rich layer and at least one chalcogenide rich layer. The metal rich layer includes at least one of a metal or a metal compound, wherein metal content of the metal rich layer is greater than 50 at. %. The chalcogenide content of the chalcogenide rich layer is greater than 50 at. %.

Abstract: The present invention is directed to a memory device that includes an array of memory cells. Each of the memory cells includes a memory element connected to a two-terminal selector element. The two-terminal selector element includes a first electrode and a second electrode with a volatile switching layer interposed therebetween. The second electrode is deposited on top of the volatile switching layer during fabrication. The first electrode has a composition comprising a metal element and the second electrode has a composition comprising the metal element and aluminum element. The metal element may be silver, copper, or nickel. The volatile switching layer may have a composite structure comprising a plurality of conductive particles embedded in an insulating matrix. Alternatively, the volatile switching layer may have a multilayer structure comprising one or more conductive layers interleaved with two or more insulating layers. The memory element may include a magnetic tunnel junction.