Abstract: Thin metallic films are used as the piezoresistive self-sensing element in microelectromechanical and nanoelectromechanical systems. The specific application to AFM probes is demonstrated.

Abstract: Microcalorimeters having low addendum heat capacities and attojoule/Kscale resolutions are provided. These microcalorimeters make use of very small calorimeter bodies composed of materials with very low heat capacities. Also provided are polymer-based microcalorimeters with thermally isolated reagent chambers. These microcalorimeters use a multi-layered polymer membrane structure to provide improved thermal isolation of a reagent chamber.

Abstract: A highly sensitive and ultra-high density array of electromechanical nanowires is fabricated. Nanowires are extremely sensitive to the strain induced by the attachment of biological and chemical species. Real-time detection is realized through piezoresistive transduction from the specially designed materials that form the nanowires. These specially designed materials include doped silicon or germanium, doped III-V semiconductors such as GaAs, GaN and InAs systems, and ultra-thin metal films.

Abstract: Ferromagnetic semiconductor-based sensor devices, including sensors for detecting pressure changes and sensors for detecting magnetic fields, such as switching events in a magnetic recording medium. The pressure sensors of the present invention detect pressure changes using magnetoresistive measurement techniques, and in particular GPHE techniques. Magnetic field detection sensors such as magnetic switching detection sensors include ferromagnetic semiconductor-based materials that provide enhanced sensitivity relative to known materials and techniques. Such magnetic switching detection sensors according to the present invention are particularly useful as a read head sensor for HDD and other magnetic storage technologies.

Abstract: An on-chip coil is provided in a micromachined device for magnetic actuation of a nanoelectromechanical microcantilever. The novel geometry involves a three dimensional solenoid or planar coil carrying high current that generates a large enough magnetic field in its close proximity to a permalloy thin film patch or columnar magnet disposed on the distal end of the piezoresistive microcantilever to effectively interacts with the magnetic thin film deposited on the microcantilever. The device comprises an effective actuators which can be integrated with biofunctionalized cantilever arrays in hybrid semiconductor-microfluidics devices for the analysis and detection of biological analytes.

Abstract: A method for fabricating parylene coated microfluidic valves is disclosed. A three-dimensional mold made of a first wax is formed. A sacrificial material made of a second wax is provided as a temporary support and then dissolved. A parylene coating is deposited onto the mold. A component material is poured onto the mold and cured, and the first wax is melted away. Further, a method for parylene coating of two-dimensional microfluidic components comprises: forming a lithographic mold of a microfluidic component, the mold made of a photoresist material; coating the lithographic mold with parylene; and removing the lithographic mold.

Abstract: Thin metallic films are used as the piezoresistive self-sensing element in microelectromechanical and nanoelectromechanical systems. The specific application to AFM probes is demonstrated.

Abstract: Ferromagnetic semiconductor-based sensor devices, including sensors for detecting pressure changes and sensors for detecting magnetic fields, such as switching events in a magnetic recording medium. The pressure sensors of the present invention detect pressure changes using magnetoresistive measurement techniques, and in particular GPHE techniques. Magnetic field detection sensors such as magnetic switching detection sensors include ferromagnetic semiconductor-based materials that provide enhanced sensitivity relative to known materials and techniques. Such magnetic switching detection sensors according to the present invention are particularly useful as a read head sensor for HDD and other magnetic storage technologies.

Abstract: Ferromagnetic semiconductor-based sensor devices, including sensors for detecting pressure changes and sensors for detecting magnetic fields, such as switching events in a magnetic recording medium. The pressure sensors of the present invention detect pressure changes using magnetoresistive measurement techniques, and in particular GPHE techniques. Magnetic field detection sensors such as magnetic switching detection sensors include ferromagnetic semiconductor-based materials that provide enhanced sensitivity relative to known materials and techniques. Such magnetic switching detection sensors according to the present invention are particularly useful as a read head sensor for HDD and other magnetic storage technologies.

Abstract: Ferromagnetic semiconductor-based compositions, systems and methods that enable studies of the dynamics and magnetoresistance of individual magnetic domain walls, and which provide enhanced magnetic switching effects relative to metallic ferromagnets. Aspects of the present invention are enabled by recent studies of the Giant Planar Hall effect (GPHE), and in particular GPHE in (Ga,Mn)As—based devices. The GPHE generally originates from macro- and micromagnetic phenomena involving single domain reversals. The GPHE-induced resistance change in multiterminal, micron-scale structures patterned from (Ga,Mn)As can be as large as about 100?, four orders of magnitude greater than analogous effects previously observed in metallic ferromagnets. Accordingly, recent data provide sufficient resolution to enable real-time observations of the nucleation and field-induced propagation of individual magnetic domain walls within such monocrystalline devices.

Abstract: A highly sensitive and ultra-high density array of electromechanical nanowires is fabricated. Nanowires are extremely sensitive to the strain induced by the attachment of biological and chemical species. Real-time detection is realized through piezoresistive transduction from the specially designed materials that form the nanowires. These specially designed materials include doped silicon or germanium, doped III-V semiconductors such as GaAs, GaN and InAs systems, and ultra-thin metal films.

Abstract: An on-chip coil is provided in a micromachined device for magnetic actuation of a nanoelectromechanical microcantilever. The novel geometry involves a three dimensional solenoid or planar coil carrying high current that generates a large enough magnetic field in its close proximity to a permalloy thin film patch or columnar magnet disposed on the distal end of the piezoresistive microcantilever to effectively interacts with the magnetic thin film deposited on the microcantilever. The device comprises an effective actuators which can be integrated with biofunctionalized cantilever arrays in hybrid semiconductor-microfluidics devices for the analysis and detection of biological analytes.

Abstract: Ferromagnetic semiconductor-based compositions, systems and methods that enable studies of the dynamics and magnetoresistance of individual magnetic domain walls, and which provide enhanced magnetic switching effects relative to metallic ferromagnets. Aspects of the present invention are enabled by recent studies of the Giant Planar Hall effect (GPHE), and in particular GPHE in (Ga,Mn)As-based devices. The GPHE generally originates from macro- and micromagnetic phenomena involving single domain reversals. The GPHE-induced resistance change in multiterminal, micron-scale structures patterned from (Ga,Mn)As can be as large as about 100&OHgr;, four orders of magnitude greater than analogous effects previously observed in metallic ferromagnets. Accordingly, recent data provide sufficient resolution to enable real-time observations of the nucleation and field-induced propagation of individual magnetic domain walls within such monocrystalline devices.

Abstract: Ferromagnetic semiconductor-based sensor devices, including sensors for detecting pressure changes and sensors for detecting magnetic fields, such as switching events in a magnetic recording medium. The pressure sensors of the present invention detect pressure changes using magnetoresistive measurement techniques, and in particular GPHE techniques. Magnetic field detection sensors such as magnetic switching detection sensors include ferromagnetic semiconductor-based materials that provide enhanced sensitivity relative to known materials and techniques. Such magnetic switching detection sensors according to the present invention are particularly useful as a read head sensor for HDD and other magnetic storage technologies.