Patents by Inventor HONGXING ZHAO

HONGXING ZHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming MOS device passivation layer and MOS device
    Patent number: 9559032
    Abstract: The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; forming a metal on the exposed part of the substrate, and the dielectric; forming a TEOS on the metal; forming a PSG on the TEOS; and forming a silicon nitrogen compound on the PSG. Therefore, the cracks problem of the passivation can be alleviated.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: January 31, 2017
    Assignee: CSMC Technologies Fab2 Co., Ltd.
    Inventors: Zhewei Wang, Xuelei Chen, Binbin Liu, Liuchun Gao, Hongxing Zhao, Guomin Huang, Long Jiang, Jibin Jiao
  • METHOD FOR FORMING MOS DEVICE PASSIVATION LAYER AND MOS DEVICE
    Publication number: 20150364397
    Abstract: The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; forming a metal on the exposed part of the substrate, and the dielectric; forming a TEOS on the metal; forming a PSG on the TEOS; and forming a nitrogen silicon compound on the PSG. Therefore, the cracks problem of the passivation can be alleviated.
    Type: Application
    Filed: July 25, 2013
    Publication date: December 17, 2015
    Inventors: ZHEWEI WANG, XUELEI CHEN, BINBIN LIU, LIUCHUN GAO, HONGXING ZHAO, GUOMIN HUANG, LONG JIANG, JIBIN JIAO