Patents by Inventor Hongxue LIU

Hongxue LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Two-dimensional magnetic recording reader with dual free layer magnetic tunnel junction
    Patent number: 11410690
    Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: August 9, 2022
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Chih-Ching Hu, Yung-Hung Wang, Ming Mao, Guanxiong Li, Daniele Mauri, Xiaoyong Liu, Yukimasa Okada, Anup Roy, Chen-Jung Chien, Hongxue Liu
  • TWO-DIMENSIONAL MAGNETIC RECORDING READER WITH DUAL FREE LAYER MAGNETIC TUNNEL JUNCTION
    Publication number: 20210390978
    Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).
    Type: Application
    Filed: June 11, 2020
    Publication date: December 16, 2021
    Inventors: Chih-Ching HU, Yung-Hung WANG, Ming MAO, Guanxiong LI, Daniele MAURI, Xiaoyong LIU, Yukimasa OKADA, Anup ROY, Chen-jung CHIEN, Hongxue LIU