Patents by Inventor Hongying Peng
Hongying Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230082990Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm?3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.Type: ApplicationFiled: November 14, 2022Publication date: March 16, 2023Applicant: First Solar, Inc.Inventors: Hongbo Cao, Sachit Grover, William Hullinger Huber, Xiaoping Li, Dingyuan Lu, Roger Malik, Hongying Peng, Joseph John Shiang, Qianqian Xin, Gang Xiong
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Patent number: 11502212Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm?3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.Type: GrantFiled: December 7, 2017Date of Patent: November 15, 2022Assignee: First Solar, Inc.Inventors: Hongbo Cao, Sachit Grover, William Hullinger Huber, Xiaoping Li, Dingyuan Lu, Roger Malik, Hongying Peng, Joseph John Shiang, Qianqian Xin, Gang Xiong
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Patent number: 11450778Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.Type: GrantFiled: May 31, 2017Date of Patent: September 20, 2022Assignee: First Solar, Inc.Inventors: Kenneth Ring, William H. Huber, Hongying Peng, Markus Gloeckler, Gopal Mor, Feng Liao, Zhibo Zhao, Andrei Los
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Publication number: 20200381567Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015cm-3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.Type: ApplicationFiled: December 7, 2017Publication date: December 3, 2020Applicant: First Solar, Inc.Inventors: Hongbo Cao, Sachit Grover, William Hullinger Huber, Xiaoping Li, Dingyuan Lu, Roger Malik, Hongying Peng, Joseph John Shiang, Qianqian Xin, Gang Xiong
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Publication number: 20190363201Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr (=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.Type: ApplicationFiled: May 31, 2017Publication date: November 28, 2019Applicant: First Solar, Inc.Inventors: Kenneth Ring, William H. Huber, Hongying Peng, Markus Gloeckler, Gopal Mor, Feng Liao, Zhibo Zhao, Andrei Los
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Patent number: 9496446Abstract: A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.Type: GrantFiled: January 31, 2012Date of Patent: November 15, 2016Assignee: First Solar, Inc.Inventors: Jinbo Cao, Bastiaan Arie Korevaar, Dalong Zhong, Juan Carlos Rojo, Qianqian Xin, Aharon Yakimov, Hongying Peng
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Publication number: 20160181467Abstract: A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.Type: ApplicationFiled: March 1, 2016Publication date: June 23, 2016Applicant: First Solar Malaysia Sdn.Bhd.Inventors: Steven Jude Duclos, Robert Dwayne Gossman, Hongying Peng, Juan Carlos Rojo
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Patent number: 9276142Abstract: A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.Type: GrantFiled: November 29, 2011Date of Patent: March 1, 2016Assignee: First Solar, Inc.Inventors: Hongying Peng, Robert Dwayne Gossman, Juan Carlos Rojo, Steven Jude Duclos
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Patent number: 9034686Abstract: Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the first layer, and a window layer disposed over the metal layer. Heating the stack includes transforming at least a portion of the first layer from an amorphous phase to a crystalline phase. Heating may be performed using any of various configurations, such as, for example, heating an individual stack, or using a face-to-face configuration of multiple stacks. The stack may be used for fabricating a photovoltaic device.Type: GrantFiled: June 29, 2012Date of Patent: May 19, 2015Assignee: First Solar, Inc.Inventors: Hongying Peng, Bastiaan Arie Korevaar, Jinbo Cao, Stephen Lorenco Araujo, Scott Daniel Feldman-Peabody, Robert Dwayne Gossman
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Publication number: 20140166088Abstract: An article, such as a photovoltaic device, and methods for making such articles, are provided. For example, one embodiment is an article comprising a plurality of layers comprising an absorber layer and a window stack. The window stack comprises antimony.Type: ApplicationFiled: December 19, 2012Publication date: June 19, 2014Applicant: First Solar, Inc.Inventors: Jongwoo Choi, Hongying Peng, Jinbo Coo
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Patent number: 8747963Abstract: An apparatus and methods for forming a diamond film, are provided. An example of an apparatus for forming a diamond film includes an electrodeless microwave plasma reactor having a microwave plasma chamber configured to contain a substrate and to contain a reactant gas excited by microwaves to generate a microwave plasma discharge. Gas injection ports extend through an outer wall of the plasma chamber at a location upstream of the plasma discharge and above the substrate. Gas jet injection nozzles interface with the gas injection ports and are configured to form a directed gas stream of reactant gas having sufficient kinetic energy to disturb a boundary layer above an operational surface of the substrate to establish a convective transfer of the film material to the operational surface of the substrate.Type: GrantFiled: January 23, 2009Date of Patent: June 10, 2014Assignee: Lockheed Martin CorporationInventors: Mark Phillip D'Evelyn, John Dewey Blouch, Ludwig Christian Haber, Hongying Peng, David Dils, Svetlana Selezneva, Kristi Jean Narang
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Publication number: 20140134838Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate by sputtering a target to deposit a transparent conductive oxide layer (e.g., comprising comprises cadmium, tin, and oxygen) on the substrate; positioning an anneal surface in close proximity to the transparent conductive oxide layer (e.g., about 3 cm or less); and, annealing the transparent conductive oxide layer while the anneal surface is in close proximity to the transparent conductive oxide layer (e.g., at an anneal temperature of about 500° C. to about 700° C.) to create a localized cadmium vapor between the transparent conductive oxide layer and the anneal surface. The anneal surface can include a material reactive with oxygen at the anneal temperature. Apparatus is also provided for annealing a thin film layer on a substrate.Type: ApplicationFiled: November 9, 2012Publication date: May 15, 2014Applicant: PrimeStar Solar, Inc.Inventors: Robert Dwayne Gossman, Kali Nicole Osborn, Hongying Peng
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Publication number: 20140000673Abstract: A photovoltaic device is presented. The device includes a first semiconductor layer disposed on a second semiconductor layer. The first semiconductor layer includes a compound having a metal species, sulfur, and oxygen. The metal species may include zinc, magnesium, tin, indium, or a combination thereof. Method for making a photovoltaic device is also presented.Type: ApplicationFiled: June 29, 2012Publication date: January 2, 2014Applicant: GENERAL ELECTRIC COMPANYInventors: Jinbo Cao, Bastiaan Arie Korevaar, Hongying Peng, Allan Robert Northrup
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Publication number: 20140004655Abstract: Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the first layer, and a window layer disposed over the metal layer. Heating the stack includes transforming at least a portion of the first layer from an amorphous phase to a crystalline phase. Heating may be performed using any of various configurations, such as, for example, heating an individual stack, or using a face-to-face configuration of multiple stacks. The stack may be used for fabricating a photovoltaic device.Type: ApplicationFiled: June 29, 2012Publication date: January 2, 2014Applicant: GENERAL ELECTRIC COMPANYInventors: Hongying Peng, Bastiaan Arie Korevaar, Jinbo Cao, Stephen Lorenco Araujo, Scott Daniel Feldman-Peabody, Robert Dwayne Gossman
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Patent number: 8476105Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.Type: GrantFiled: December 22, 2010Date of Patent: July 2, 2013Assignee: General Electric CompanyInventors: Holly Ann Blaydes, George Theodore Dalakos, David William Vernooy, Allan Robert Northrup, Juan Carlos Rojo, Peter Joel Meschter, Hongying Peng, Hongbo Cao, Yangang Andrew Xi, Robert Dwayne Gossman, Anping Zhang
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Publication number: 20130109124Abstract: In one aspect of the present invention, a method is included. The method includes thermally processing an assembly to form at least one transparent layer. The assembly includes a first panel including a first layer disposed on a first support and a second panel including a second layer disposed on a second support, wherein the second panel faces the first panel, and wherein the first layer and the second layer include substantially amorphous cadmium tin oxide. Method of making a photovoltaic device is also included.Type: ApplicationFiled: October 28, 2011Publication date: May 2, 2013Applicant: GENERAL ELECTRIC COMPANYInventors: Hongying Peng, Juan Carlos Rojo, Hongbo Cao, George Theodore Dalakos, Holly Ann Blaydes, David William Vernooy, Mark Jeffrey Pavol, Jae Hyuk Her, Hong Piao, Robert Dwayne Gossman, Scott Daniel Feldman-Peabody, Yangang Andrew Xi
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Publication number: 20120164785Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.Type: ApplicationFiled: December 22, 2010Publication date: June 28, 2012Applicant: GENERAL ELECTRIC COMPANYInventors: Holly Ann Blaydes, George Theodore Dalakos, David William Vernooy, Allan Robert Northrup, Juan Carlos Rojo, Peter Joel Meschter, Hongying Peng, Hongbo Cao, Yangang Andrew Xi, Robert Dwayne Gossman, Anping Zhang
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Publication number: 20120156828Abstract: A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.Type: ApplicationFiled: November 29, 2011Publication date: June 21, 2012Applicant: GENERAL ELECTRIC COMPANYInventors: Hongying Peng, Robert Dwayne Gossman, Juan Carlos Rojo, Steven Jude Duclos
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Publication number: 20100213175Abstract: There are provided simplified methods for etching diamond, as compared to conventional methods. More particularly, the methods disclosed herein involve contacting at least a portion of the diamond with a metal or metal oxide so that redox etching of the contacted portion of the diamond occurs. Also provided are diamonds polished using the present method, as well as optical windows, heat sinks, cutting tools and electrical components incorporating diamonds polished/etched via the disclosed method.Type: ApplicationFiled: February 22, 2009Publication date: August 26, 2010Applicant: GENERAL ELECTRIC COMPANYInventors: Hongying Peng, Mark Philip D'Develyn, John William Nink
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Publication number: 20100189924Abstract: An apparatus and methods for forming a diamond film, are provided. An example of an apparatus for forming a diamond film includes an electrodeless microwave plasma reactor having a microwave plasma chamber configured to contain a substrate and to contain a reactant gas excited by microwaves to generate a microwave plasma discharge. Gas injection ports extend through an outer wall of the plasma chamber at a location upstream of the plasma discharge and above the substrate. Gas jet injection nozzles interface with the gas injection ports and are configured to form a directed gas stream of reactant gas having sufficient kinetic energy to disturb a boundary layer above an operational surface of the substrate to establish a convective transfer of the film material to the operational surface of the substrate.Type: ApplicationFiled: January 23, 2009Publication date: July 29, 2010Applicant: LOCKHEED MARTIN CORPORATIONInventors: Mark Philip D'Evelyn, John Dewey Blouch, Ludwig Christian Haber, Hongying Peng, David Dils, Svetlana Selezneva, Kristi Jean Narang