Patents by Inventor Hongyu Ximen

Hongyu Ximen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010007098
    Abstract: A method and an apparatus for providing employee gift certificates award and exchange are described. The method and apparatus enable the award of a certificate either automatically upon an occurrence of a designated event, such as a birthday, or upon request, such as by a manager. The method and system also enable the employee to exchange the certificate for goods from various merchants over the internet using a single point shopping cart. The shopping cart accesses the various merchants' sites, searches for specific purchase-related fields, creates a database of those fields, and creates a hyperlink to that merchant's site. When the employee wishes to access the merchant's site, the shopping cart acts as a proxy for the user, but also monitors the communication for specific requests.
    Type: Application
    Filed: February 6, 2001
    Publication date: July 5, 2001
    Inventors: Susan E. Hinrichs, Diogo P. Rau, Hongyu Ximen, Joseph Bach
  • Patent number: 5700526
    Abstract: Methods are provided for depositing insulator material at a pre-defined area of an integrated circuit (IC) by: placing an IC in a vacuum chamber; applying to a localized surface region of the integrated circuit at which insulator material is to be deposited a first gas containing molecules of a dissociable compound comprising atoms of silicon and oxygen and a second gas containing molecules of a compound which reacts with metal ions; generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. The dissociable compound comprises atoms of carbon and hydrogen, such as di-t-butoxydiacetoxy-silane. The compound which reacts with metal ions may be carbon tetrabromide or ammonium carbonate.
    Type: Grant
    Filed: May 4, 1995
    Date of Patent: December 23, 1997
    Assignee: Schlumberger Technologies Inc.
    Inventors: Hongyu Ximen, Michael A. Cecere, Douglas Masnaghetti
  • Patent number: 5616921
    Abstract: Preferential etching during FIB milling can result in a rough, pitted surface and make IC probing/repair operations difficult. Preferential etching is compensated by acquiring a contrast image of the partially-milled sample, preparing mask image data from the contrast image, and controlling further FIB milling using the mask image data. For example, a window is to be milled in a top-layer power plane of an IC to expose a hidden layer. The window is partially milled. A FIB image is acquired and thresholded to produce mask image data. The mask image data distinguish areas where the power plane has been milled through from those where it has not been milled through. Milling is resumed using the mask image data to control effective FIB milling current. The mask image data are updated periodically as the window is milled.
    Type: Grant
    Filed: June 30, 1994
    Date of Patent: April 1, 1997
    Assignee: Schlumberger Technologies Inc.
    Inventors: Christopher G. Talbot, Douglas Masnaghetti, Hongyu Ximen