Abstract: For use in a wireless network, an apparatus for use in a wireless network includes an antenna having (i) a first patch element with two opposite corners truncated and (ii) a first microstrip line connected to a first side of the first patch element and configured to feed the first patch element. The first microstrip line forms an angle of substantially 45° with the first side of the first patch element. The antenna could also include (i) a second patch element with two opposite corners truncated and (ii) a second microstrip line connected to a side of the second patch element. The second microstrip line could form an angle of substantially 45° with the side of the second patch element. The patch elements could be series-coupled and form an antenna array. One patch element could represent a host patch element, and another patch element could represent a parasitic patch element.

Abstract: An apparatus includes an antenna array having multiple antenna elements arranged in multiple sub-arrays. The antenna elements are arranged in at least two different types of sub-arrays. The at least two different types of sub-arrays have substantially orthogonal electric field (E-field) orientations. The antenna elements can be arranged in multiple patch sub-arrays and multiple substrate integrated waveguide (SIW) sub-arrays, and the patch sub-arrays can be interleaved with the SIW sub-arrays. Each patch sub-array can include at least two patch antenna elements coupled in series, and each SIW sub-array can include a conductive plate and multiple slots in the conductive plate. The SIW sub-arrays can resonate at substantially a same frequency as the patch sub-arrays.

Abstract: This invention discloses a method for fabricating SOI material, incorporating an amorphous process introduced by ion implantation in the conventional SIMOX methods, which enhances diffusion of various atoms in the amorphous region in annealing process. It realizes under a lower temperature annealing to eliminate threading dislocations and other crystal defects in the top silicon layer and silicon islands, pinholes and other silicon segregation products in the buried oxide layer and fabricate high quality of SOI material. Another method for forming SOI material is also described, incorporating an amorphous process introduced by ion implantation in the SIMNI or SIMON methods. It forms amorphous buried nitride or oxynitride layer, a top single crystal silicon layer and a sharp interface between the top layer and the buried layer.