Patents by Inventor Hongzhu KAN

Hongzhu KAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor lasers with substrate mode suppression layers
    Patent number: 12119615
    Abstract: Disclosed is a semiconductor laser with a substrate mode suppression layer, comprising a substrate, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, an electron blocking layer, and a second limiting layer sequentially stacked from bottom to top. A Si/C concentration ratio of an element Si to an element C of the substrate mode suppression layer?that of the first sub-limiting layer?that of the second sub-limiting layer. An In/Al concentration ratio of an element In to an element Al of the substrate mode suppression layer?that of the first sub-limiting layer?that of the second sub-limiting layer. An H/C concentration ratio of an element H to an element C of the substrate mode suppression layer?that of the second sub-limiting layer?that of the first sub-limiting layer.
    Type: Grant
    Filed: April 17, 2024
    Date of Patent: October 15, 2024
    Assignee: ANHUI GAN SEMICONDUCTOR CO., LTD.
    Inventors: Shuiqing Li, Hongzhu Kan, Jinjian Zheng, Xinghe Wang, Xin Cai, Wanjun Chen, Jiangyong Zhang, Jun Huang, Zihan Liu
  • SEMICONDUCTOR LASERS WITH SUBSTRATE MODE SUPPRESSION LAYERS
    Publication number: 20240332894
    Abstract: Disclosed is a semiconductor laser with a substrate mode suppression layer, comprising a substrate, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, an electron blocking layer, and a second limiting layer sequentially stacked from bottom to top. A Si/C concentration ratio of an element Si to an element C of the substrate mode suppression layer?that of the first sub-limiting layer?that of the second sub-limiting layer. An In/Al concentration ratio of an element In to an element Al of the substrate mode suppression layer?that of the first sub-limiting layer?that of the second sub-limiting layer. An H/C concentration ratio of an element H to an element C of the substrate mode suppression layer?that of the second sub-limiting layer?that of the first sub-limiting layer.
    Type: Application
    Filed: April 17, 2024
    Publication date: October 3, 2024
    Applicant: ANHUI GAN SEMICONDUCTOR CO., LTD.
    Inventors: Shuiqing LI, Hongzhu KAN, Jinjian ZHENG, Xinghe WANG, Xin CAI, Wanjun CHEN, Jiangyong ZHANG, Jun HUANG, Zihan LIU